Display device having stacked storage capacitors below light emitting element

Patent metadata

Field	Value
Publication number	US-9722010-B2
Application number	US-201615351677-A
Country	US
Kind code	B2
Filing date	Nov 15, 2016
Priority date	Jun 15, 2012
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

A display device according to the present disclosure includes: a transistor section ( 100 ) that includes a gate insulating film ( 130 ), a semiconductor layer ( 140 ), and a gate electrode layer ( 120 ), the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section ( 200 ) that includes a first metal film ( 210 ) and a second metal film ( 220 ), the first metal film being disposed at a same level as wiring layers ( 161, 162 ) that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film ( 152 ) in between; and a display element that is configured to be controlled by the transistor section.

First claim

The invention claimed is:

1. A display device comprising:
a first section including a gate insulating film, a semiconductor layer, and a gate electrode, the semiconductor layer provided on the gate insulating film, the gate electrode provided on an opposite side to the semiconductor layer and the gate insulating film such that the gate electrode is provided between the gate insulating film and a substrate;
a second section including a first metal film and a second metal film, the first metal film disposed at a same level as a wiring layer that is electrically connected to the semiconductor layer, the wiring layer disposed over the first section, the second metal film disposed over the first metal film, and a first interlayer insulating film provided between the second metal film and the first metal film;
a third section provided below the second section, the third section including an insulating film, a separate semiconductor film, and a metal film, the insulating film disposed at a same level as the gate insulating film, the separate semiconductor film disposed at a same level as the semiconductor layer, the metal film disposed at a same level as the gate electrode; and
a light emitting element configured to be controlled by the first section,
wherein the first section is a transistor,
wherein the second section is a first capacitor, and
wherein the third section is a second capacitor.

2. The display device according to claim 1 , wherein the first interlayer insulating film includes at least one recessed portion in a cross-sectional view.

3. The display device according to claim 1 , wherein each of the first metal film and the second metal film includes molybdenum,
wherein a thickness of the first interlayer insulating film of the second section is from about 50 nm to 500 nm,
wherein a thickness of the first metal film of the second section is from about 100 nm to 1500 nm, and
wherein a thickness of the second metal film of the second section is from about 100 nm to 1500 nm.

4. The display device according to claim 1 , wherein the first interlayer insulating film includes at least one selected from the group consisting of silicon oxide, silicon nitride, polyimide, and an acrylic resin.

5. The display device according to claim 1 ,
wherein the second metal film is larger than the first metal film in a plan view.

6. The display device according to claim 1 ,
wherein the second metal film is larger than the gate electrode in a plan view.

7. A display device comprising:
a first section including a gate insulating film, a semiconductor layer, and a gate electrode, the semiconductor layer provided on the gate insulating film, the gate electrode provided on an opposite side to the semiconductor layer and the gate insulating film such that the gate electrode is provided between the gate insulating film and a substrate;
a second section including a first metal film and a second metal film, the first metal film disposed at a same level as a wiring layer that is electrically connected to the semiconductor layer, the wiring layer disposed over the first section, the second metal film disposed over the first metal film, and a first interlayer insulating film provided between the second metal film and the first metal film;
a third section provided below the second section, the third section including an insulating film, a separate semiconductor film, and a metal film, the insulating film disposed at a same level as the gate insulating film, the separate semiconductor film disposed at a same level as the semiconductor layer, the metal film disposed at a same level as the gate electrode; and
a light emitting element configured to be controlled by the first section,
wherein the light emitting element includes a pixel electrode disposed over the second section.

8. The display device according to claim 7 , wherein the first interlayer insulating film includes at least one recessed portion in a cross-sectional view.

9. The display device according to claim 7 ,
wherein each of the first metal film and the second metal film includes molybdenum,
wherein a thickness of the first interlayer insulating film of the second section is from about 50 nm to 500 nm,
wherein a thickness of the first metal film of the second section is from about 100 nm to 1500 nm, and
wherein a thickness of the second metal film of the second section is from about 100 nm to 1500 nm.

10. The display device according to claim 7 , wherein the first interlayer insulating film includes at least one selected from the group consisting of silicon oxide, silicon nitride, polyimide, and an acrylic resin.

11. The display device according to claim 7 ,
wherein the first section is a transistor,
wherein the second section is a first capacitor, and
wherein the third section is a second capacitor.

12. The display device according to claim 7 ,
wherein the second metal film is larger than the first metal film in a plan view.

13. The display device according to claim 7 ,
wherein the second metal film is larger than the gate electrode in a plan view.

14. The display device according to claim 7 ,
wherein the pixel electrode is connected to the first wiring via a contact hole formed in a second insulating film.

15. The display device according to claim 7 , further comprising an organic material formed on the pixel electrode.

16. A display device comprising:
a first section including a first semiconductor portion, a gate electrode, and a first insulating film disposed between the gate electrode and the first semiconductor portion;
a second section including a first metal film, a second metal film, and a first interlayer insulating film disposed between the first metal film and the second metal film;
a third section including a second semiconductor portion disposed between the first metal film and a substrate; and
a light emitting element including a pixel electrode,
wherein the pixel electrode is connected to a first wiring disposed above the first interlayer insulating film,
wherein a vertical distance between the first metal film and the second metal film is smaller than a vertical distance between the first metal film and the first wiring,
wherein the light emitting element is configured to be controlled by the first section,
wherein the second section overlaps with the third section in a plan view,
wherein the first section is a transistor,
wherein the second section is a first capacitor, and
wherein the third section is a second capacitor.

17. The display device according to claim 16 , wherein the first interlayer insulating film includes at least one recessed portion in a cross-sectional view.

18. The display device according to claim 16 , wherein each of the first metal film and the second metal film includes molybdenum,
wherein a thickness of the first interlayer insulating film of the second section is from about 50 nm to 500 nm,
wherein a thickness of the first metal film of the second section is from about 100 nm to 1500 nm, and
wherein a thickness of the second metal film of the second section is from about 100 nm to 1500 nm.

19. The display device according to claim 16 , wherein the first interlayer insulating film includes at least one selected from the group consisting of silicon oxide, silicon nitride, polyimide and an acrylic resin.

20. The display device according to claim 16 ,
wherein the second metal film is larger than the first metal film in a plan view.

21. The display device accor

Assignees

• Sony Corp

Inventors

• Tsuno Hitoshi
• Nagasawa Koichi

Classifications

• H05B33/22

  characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers · CPC title

• H05B33/10

  Apparatus or processes specially adapted to the manufacture of electroluminescent light sources · CPC title

• G02F1/136227

  Through-hole connection of the pixel electrode to the active element through an insulation layer · CPC title

• G02F1/136213 Primary

  Storage capacitors associated with the pixel electrode · CPC title

• H01L27/1248

  Electricity · mapped topic