Semiconductor device and imaging device for reading charge

Patent metadata

Field	Value
Publication number	US-9721994-B2
Application number	US-201514943221-A
Country	US
Kind code	B2
Filing date	Nov 17, 2015
Priority date	Mar 10, 2015
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

According to an embodiment, a semiconductor device includes a silicon substrate, a photoelectric conversion layer, a termination layer, and an electrode layer. In the silicon substrate, first semiconductor regions and second semiconductor regions are alternately arranged along a first surface on a light incident side of the silicon substrate. The first semiconductor regions are doped with impurities of first concentration and have a conductivity of either one of p-type and n-type. The second semiconductor regions are doped with impurities of a second concentration lower than the first concentration and have a conductivity of the other type. The photoelectric conversion layer is disposed on a first surface side of the silicon substrate. The termination layer is disposed between the silicon substrate and the photoelectric conversion layer, in contact with the first surface, and to terminate dangling bonds of the silicon substrate. The electrode layer is provided on the light incident side.

First claim

What is claimed is:

1. A semiconductor device, comprising:
an electrode layer;
a silicon substrate in which first semiconductor regions and second semiconductor regions are alternately and continuously arranged along a first surface on a light incident side of the silicon substrate,
the first semiconductor regions being doped with impurities of a first concentration and having a conductivity of either one of a p-type and an n-type,
the second semiconductor regions being doped with impurities of a second concentration lower than the first concentration and having a conductivity of the other type;

a termination layer that is disposed between the electrode layer and the silicon substrate and terminates dangling bonds of the silicon substrate; and
a photoelectric conversion layer that is disposed between the termination layer and the electrode layer.

2. The device according to claim 1 , wherein
the termination layer is a region where the dangling bonds on a surface of a silicon layer are terminated by hydrogen, the silicon layer being a layer in which the first and the second semiconductor regions are alternately and continuously arranged along the surface of the silicon layer.

3. The device according to claim 1 , wherein the termination laser is a silicon dioxide film.

4. The device according to claim 1 , wherein the termination layer has a thickness allowing charges to pass though the termination layer.

5. The device according to claim 1 , further comprising a reading circuit that is provided on a second surface side of the silicon substrate, the second surface being opposite the first surface, wherein
the reading circuit includes:
a transfer transistor that is connected to the second semiconductor region and transfers charges accumulated in the second semiconductor region, the transfer transistor being a vertical transistor;
a third semiconductor region that is connected to the transfer transistor and. converts the charges transferred from the transfer transistor into a voltage; and
a wiring layer that outputs the converted voltage as a signal.

6. The device according to claim 1 , wherein the termination laser is disposed in contact with both of the first surface of the silicon substrate and a third surface of the photoelectric conversion layer on a silicon substrate side.

7. The device according to claim 1 , wherein the photoelectric conversion layer includes an organic material as a principal component.

8. The device according to claim 1 , wherein
the second semiconductor regions function as charge accumulation regions that accumulate charges,
the first semiconductor regions function as pixel separation regions that separate pixel regions, and
the photoelectric conversion layer is a continuous film continuously provided along an arrangement direction of the charge accumulation regions.

9. The device according to claim 1 , wherein a first density of the impurities of the first semiconductor region and a second density of the impurities of the second semiconductor region satisfy the following expression (1):
Na>Nd×A a /A d   (1)

where N a represents the first density, N d represents the second density, A a represents an area of the first semiconductor region in a pixel region, and A d represents an area of the second semiconductor region in the pixel region.

10. The device according to claim 1 , further comprising a voltage applying unit configured to apply, to the electrode layer, a voltage equal to or larger than a voltage value allowing charges to pass through the termination layer by direct tunneling.

11. An imaging device comprising the semiconductor device according to claim 1 .

Assignees

• Toshiba Kk

Inventors

• Miyazaki Takashi
• Funaki Hideyuki
• Iida Yoshinori
• Takasu Isao
• Nobusa Yuki

Classifications

• H01L27/1461

  Electricity · mapped topic

• H01L51/424

  Electricity · mapped topic

• H01L27/14667

  Electricity · mapped topic

• H01L27/1464

  Electricity · mapped topic

• H01L27/14645

  Electricity · mapped topic