Method for manufacturing silica layer, silica layer, and electronic device

Patent metadata

Field	Value
Publication number	US-9721785-B2
Application number	US-201615178378-A
Country	US
Kind code	B2
Filing date	Jun 9, 2016
Priority date	Sep 25, 2015
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

A method of manufacturing a silica layer includes: coating a pre-wetting liquid material including a carbon compound on a substrate; coating a composition for forming a silica layer on the substrate coated with the pre-wetting liquid material; and curing a substrate coated with the composition for forming a silica layer.

First claim

What is claimed is:

1. A method of manufacturing a silica layer, the method comprising:
coating a pre-wetting liquid material comprising a carbon compound on a substrate;
coating a composition for forming a silica layer on the substrate coated with the pre-wetting liquid material; and
curing a substrate coated with the composition for forming a silica layer.

2. The method of claim 1 , wherein the carbon compound comprises a substituted or unsubstituted benzene ring in the structure and the total number of carbon atoms of the carbon compound is 6 to 14.

3. The method of claim 1 , wherein the carbon compound has a boiling point of about 98° C. to about 200° C.

4. The method of claim 1 , wherein the carbon compound comprises a substituted or unsubstituted trimethylbenzene, a substituted or unsubstituted dimethylbenzene, a substituted or unsubstituted diethylbenzene, or a combination thereof.

5. The method of claim 1 , wherein the composition for forming a silica layer comprises a silicon-containing polymer and a solvent.

6. The method of claim 5 , wherein the silicon-containing polymer comprises polysilazane, polysiloxazane, or a combination thereof.

7. The method of claim 5 , the solvent comprises at least one selected from benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydro naphthalene, dipentene, pentane, hexane, heptane, octane, nonane, decane, ethylcyclohexane, methylcyclohexane, p-menthane, dipropylether, dibutylether, anisole, butyl acetate, amyl acetate, methylisobutylketone, and a combination thereof.

8. The method of claim 1 , wherein the composition for forming a silica layer is coated using a spin-on coating method.

9. The method of claim 1 , wherein the curing is performed a temperature of greater than or equal to about 150° C. under an atmosphere comprising an inert gas.

10. A silica layer manufactured by the method of claim 1 .

11. An electronic device comprising the silica layer of claim 10 .

Assignees

• Samsung Sdi Co Ltd

Inventors

• Lee Jiho
• Noh Kunbae
• Yun Huichan
• Bae Jin-Hee
• Lim Wanhee

Classifications

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6529

  by exposure to a gas or vapour · CPC title

• H10P14/6508

  by exposure to a liquid · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title