Oxide sintered body, production method therefor, target, and transparent conductive film

US9721770B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9721770-B2
Application numberUS-201514641981-A
CountryUS
Kind codeB2
Filing dateMar 9, 2015
Priority dateAug 5, 2009
Publication dateAug 1, 2017
Grant dateAug 1, 2017

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In 2 O 3 phase of a bixbyite structure has a CeO 2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm.

First claim

Opening claim text (preview).

What is claimed is: 1. A oxide sintered body comprising an indium oxide and a cerium oxide, wherein the cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce), said oxide sintered body has an In 2 O 3 phase of a bixbyite structure as a main crystal phase, has a CeO 2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase. 2. The oxide sintered body according to claim 1 , characterized in that X-ray diffraction peak intensity ratio (I), defined by the following formula, is equal to or lower than 25%: I=[CeO 2 phase(111)/In 2 O 3 phase(222)]×100[%]. 3. A target for sputtering obtained by fabricating the oxide sintered body according to claim 2 , wherein density of the oxide sintered body is equal to or higher than 6.3 g/cm 3 . 4. The oxide sintered body according to claim 1 , wherein the oxide sintered body does not comprise tin. 5. A target for sputtering obtained by fabricating the oxide sintered body according to claim 4 , wherein density of the oxide sintered body is equal to or higher than 6.3 g/cm 3 . 6. A target for sputtering obtained by fabricating the oxide sintered body according to claim 1 , wherein density of the oxide sintered body is equal to or higher than 6.3 g/cm 3 .

Assignees

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Classifications

  • Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps (details of electron-optical or ion-optical arrangements H01J3/00) · CPC title

  • Electricity · mapped topic

  • Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

  • Electricity · mapped topic

  • Oxides (C23C14/10 takes precedence) · CPC title

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What does patent US9721770B2 cover?
A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium…
Who is the assignee on this patent?
Sumitomo Metal Mining Co
What technology area does this patent fall under?
Primary CPC classification H01J37/3429. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 01 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).