Oxide sintered body, production method therefor, target, and transparent conductive film
US-9028721-B2 · May 12, 2015 · US
US9721770B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9721770-B2 |
| Application number | US-201514641981-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 9, 2015 |
| Priority date | Aug 5, 2009 |
| Publication date | Aug 1, 2017 |
| Grant date | Aug 1, 2017 |
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A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In 2 O 3 phase of a bixbyite structure has a CeO 2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm.
Opening claim text (preview).
What is claimed is: 1. A oxide sintered body comprising an indium oxide and a cerium oxide, wherein the cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce), said oxide sintered body has an In 2 O 3 phase of a bixbyite structure as a main crystal phase, has a CeO 2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase. 2. The oxide sintered body according to claim 1 , characterized in that X-ray diffraction peak intensity ratio (I), defined by the following formula, is equal to or lower than 25%: I=[CeO 2 phase(111)/In 2 O 3 phase(222)]×100[%]. 3. A target for sputtering obtained by fabricating the oxide sintered body according to claim 2 , wherein density of the oxide sintered body is equal to or higher than 6.3 g/cm 3 . 4. The oxide sintered body according to claim 1 , wherein the oxide sintered body does not comprise tin. 5. A target for sputtering obtained by fabricating the oxide sintered body according to claim 4 , wherein density of the oxide sintered body is equal to or higher than 6.3 g/cm 3 . 6. A target for sputtering obtained by fabricating the oxide sintered body according to claim 1 , wherein density of the oxide sintered body is equal to or higher than 6.3 g/cm 3 .
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