Metrology method and apparatus, lithographic system and device manufacturing method

Patent metadata

Field	Value
Publication number	US-9719945-B2
Application number	US-201514825751-A
Country	US
Kind code	B2
Filing date	Aug 13, 2015
Priority date	Mar 27, 2012
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., −d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

First claim

The invention claimed is:

1. A method comprising:
forming three or more targets on a substrate using a lithographic process;
obtaining scatterometry measurements from the three or more targets, each of the scatterometry measurements comprising:
a first value corresponding to an overlay in the three or more targets, and
a second value corresponding to an asymmetry of a feature in a corresponding one of the three or more targets; and

calculating an overlay error based on the scatterometry measurements and a non-linear relationship between the overlay and the scatterometry measurements, such that the second value is excluded from the calculated overlay error.

2. The method of claim 1 , wherein each of the three or more targets comprises an overlay bias that is different from each other overlay bias of the three or more targets.

3. The method of claim 2 , wherein:
each of the three or more targets comprises periodic structures; and
the overlay bias is greater than about 5% or 10% or greater than about 15% or 20% of a pitch of the periodic structures.

4. The method of claim 1 , wherein the non-linear relationship is a sinusoidal function or a combination of sinusoidal functions related harmonically to one another.

5. The method of claim 1 , wherein the calculating is based on an assumption that the second value is constant for all values of the overlay.

6. The method of claim 1 , wherein the calculating is based on three scatterometry measurements.

7. The method of claim 1 , wherein the calculating is based on four scatterometry measurements.

8. The method of claim 1 , wherein the scatterometry measurements are performed substantially in parallel.

9. An inspection apparatus comprising:
a support configured to hold a substrate having a set of targets;
an optical system configured to detect radiation scattered from three or more targets of the set of targets to obtain corresponding three or more scatterometry measurements, each of the three or more scatterometry measurements comprising:
a first value corresponding to an overlay in the set of targets, and
a second value corresponding to an asymmetry of a feature in a corresponding one of the three or more targets of the set of targets;

a processor configured to calculate an overlay error based on the three or more scatterometry measurements and a non-linear relationship between the overlay and the three or more scatterometry measurements, such that the second value is excluded from the calculated overlay error.

10. The apparatus of claim 9 , wherein each target of the set of targets comprises an overlay bias that is different from each other overlay bias of the set of targets.

11. The apparatus of claim 10 , wherein:
each target of the set of targets comprises periodic structures; and
the overlay bias is greater than about 5% or 10% or greater than about 15% or 20% of a pitch of the periodic structures.

12. The apparatus of claim 9 , wherein the non-linear relationship is a sinusoidal function or a combination of sinusoidal functions related harmonically to one another.

13. The apparatus of claim 9 , wherein the processor is configured to calculate the overlay error based on an assumption that the second value is constant for all values of the overlay.

14. The apparatus of claim 9 , wherein the processor is configured to calculate the overlay error based on three scatterometry measurements.

15. The apparatus of claim 9 , wherein the processor is configured to calculate the overlay error based on four scatterometry measurements.

16. The apparatus of claim 9 , wherein:
a first sub-set of the set of targets comprises a periodic structure having periodicity in a first direction;
a second sub-set of the set of targets comprises a periodic structure having periodicity in a second direction, the first and second directions being different from each other; and
the first and second sub-sets are arranged on the substrate such that each target of the first sub-set is separated from each other target of the first sub-set by a target of the second sub-set.

17. The apparatus of claim 16 , wherein the processor is configured to calculate the overlay error separately in the first and second directions.

18. The apparatus of claim 9 , wherein:
the optical system comprises an image sensor; and
the optical system is configured to detect radiation scattered from the three or more targets substantially simultaneously on different portions of the image sensor.

19. A lithographic system comprising:
a lithographic apparatus comprising:
an illumination system configured to illuminate a pattern,
a projection system configured to project an image of the pattern onto a substrate, and
a support configured to hold a substrate having a set of targets; and

an inspection apparatus comprising:
an optical system configured to detect radiation scattered from three or more targets of the set of targets to obtain corresponding three or more scatterometry measurements, each of the three or more scatterometry measurements comprising:
a first value corresponding to an overlay in the set of targets, and
a second value corresponding to an asymmetry of a feature in a corresponding one of the three or more targets of the set of targets; and

a processor configured to calculate an overlay error based on the three or more scatterometry measurements and a non-linear relationship between the overlay and the three or more scatterometry measurements.

20. The system of claim 19 , wherein each target of the set of targets comprises an overlay bias that is different from each other overlay bias of the set of targets.

Assignees

• Asml Netherlands Bv

Inventors

• Smilde Hendrik Jan Hidde
• Adam Omer Abubaker Omer

Classifications

• G03F7/70633 Primary

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G03F9/7019

  Calibration · CPC title

• G01N21/956 Primary

  Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)} · CPC title

• Y10T428/24802

  Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] · CPC title

• G03F7/70683

  Mark designs · CPC title