Optically activated linear switch for radar limiters or high power switching applications

Patent metadata

Field	Value
Publication number	US-9716202-B2
Application number	US-201314421412-A
Country	US
Kind code	B2
Filing date	Aug 13, 2013
Priority date	Aug 13, 2012
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

The present invention relates to a solid-state optically activated switch that may be used as limiting switch in a variety of applications or as a high voltage switch. In particular, the switch may incorporate the photoconductive properties of a semiconductor to provide the limiting function in a linear mode. In one embodiment, a configuration of the switch allows for greater than 99.9999% off-state transmission and an on-state limiting of less than 0.0001% of the incident signal.

First claim

What is claimed is:

1. An optically-activated semiconductor switch device comprising:
a semiconductor material comprising nitride;
a conductive contact engaged to and traversing the semiconductor material;
a plurality of grounding electrodes engaged to the semiconductor material, wherein the conductive contact is disposed between the plurality of grounding electrodes, and a portion of the semiconductor material separates each of the grounding electrodes from the conductive contact;
wherein, in an off-state, a majority of an incident signal received at the conductive contact is transmitted through the conductive contact; and,
wherein, in an on-state when the semiconductor material is contacted with an optical signal, a majority of the incident signal received at the conductive contact is shunted to at least one grounding electrode of the plurality of grounding electrodes, reflected back to an input of the incident signal, or both.

2. The semiconductor switch device of claim 1 wherein a resistance of the portion of the semiconductor material is decreased when the portion of the semiconductor material is contacted with the optical signal.

3. The semiconductor switch device of claim 1 , wherein the semiconductor device has a coplanar configuration and is configured as an in-line signal limiter.

4. The semiconductor switch device of claim 1 further comprising a substrate and wherein the semiconductor material is engaged to the substrate.

5. The semiconductor switch device of claim 4 , wherein the semiconductor material is grown on the substrate.

6. The semiconductor switch device of claim 4 wherein the semiconductor material has a thickness in a range between about 0.5 μm and about 2000 μm and the substrate has a substrate thickness in a range between about 100 μm and about 40,000 μm.

7. The semiconductor switch device of claim 1 , wherein the distance between the conductive contact and each of the plurality of grounding electrodes is in a range between about 2 μm and 50,000 μm.

8. The semiconductor switch device of claim 1 , wherein the semiconductor device transmits signals for a conductivity in a range between about 1×10 −3 S/m and 1×10 −6 S/m, when the device is in the off-state.

9. The semiconductor switch device of claim 1 , wherein the semiconductor device limits an amplitude of an undesired incident signal for a spot conductivity of approximately 1×10 7 S/m.

10. The semiconductor switch device of claim 1 , wherein, when in the on-state, the semiconductor device limits an amplitude of an undesired input signal to approximately 0.2% of an original amplitude for the undesired input signal.

11. The semiconductor switch device of claim 1 , wherein, when, in the on-state, the semiconductor device limits an amplitude of an undesired input signal having a voltage of approximately 1 kV to approximately 2 V.

12. The semiconductor switch device of claim 1 , wherein the incident signal received at the conductive contact is switched in a series to one or more of the plurality of grounding electrodes, when the portion of the semiconductor material is contacted with an optical signal.

13. An optically-activated semiconductor switch device comprising:
a doped semiconductor material comprising nitride;
a plurality of conductive contacts engaged to the doped semiconductor material;
a plurality of grounding electrode pairs engaged to the doped semiconductor material, wherein each of the plurality of conductive contacts is disposed between pairs of the plurality of grounding electrodes, and portions of the doped semiconductor material separate each grounding electrode of the pairs of grounding electrode pairs from each conductive contact of the plurality of conductive contacts disposed therebetween; and,
wherein, in an off-state, a majority of an incident signal received at at least one conductive contact of the plurality of conductive contacts is transmitted through the at least one conductive contact; and,
wherein, in an on-state when the portions of the doped semiconductor material are contacted with an optical signal, a majority of the incident signal received at the at least one conductive contact is shunted to at least one of the grounding electrodes of the corresponding grounding electrode pairs, reflected back to an input of the incident signal, or both.

14. An optically-activated semiconductor switch device configured as a switch, the switch device comprising:
at least one compensation-doped semiconductor material comprising nitride;
two or more conductive contacts engaged to a surface of the at least one compensation-doped semiconductor material, wherein the two or more conductive contacts define an illumination region on the surface of the at least one compensation-doped semiconductor material therebetween;
wherein the illumination region defines a conductive channel between the conductive contacts;
wherein an optical signal received at the illumination region on the surface decreases the resistance of the at least one compensation-doped semiconductor material to permit an incident signal received at at least one of the two or more conductive contacts to traverse the illumination region.

15. The semiconductor switch device of claim 14 , wherein the two or more conductive contacts are painted on to the at least one compensation-doped semiconductor material.

16. The semiconductor switch device of claim 14 , wherein the two or more conductive contacts are sputtered on to the at least one compensation-doped semiconductor material by a vacuum deposition.

17. The semiconductor switch device of claim 14 , wherein the distance between the two or more conductive contacts is approximately 3 mm.

18. The semiconductor switch device of claim 14 , wherein the two or more conductive contacts are further engaged to conductive wires to permit electrical communication with one or more circuits engaged to the at least one compensation-doped semiconductor material.

19. The semiconductor switch device of claim 14 , wherein optical signal is generated by a laser and the optical signal causes up to an approximate 6-fold decrease in a resistivity of the illumination region.

20. The semiconductor switch device of claim 14 , wherein the two or more conductive contacts are ohmic contacts.

21. The semiconductor switch device of claim 20 , wherein the two or more ohmic conductive contacts comprise titanium, aluminum, or combinations thereof.

22. The semiconductor switch device of claim 20 , wherein the two or more ohmic conductive contacts reduce a resistance of the switch device to one ohm or less.

Assignees

• Univ Missouri

Inventors

• Curry Randy D
• Druce Robert
• Kinsey Nathaniel
• Helava Heikki

Classifications

• H01L31/0224

  Electricity · mapped topic

• H01L31/041

  Electricity · mapped topic

• H01L31/09 Primary

  Electricity · mapped topic

• H01L31/0304

  Electricity · mapped topic

• Y02E10/544

  Solar cells from Group III-V materials · CPC title