AMOLED backplane structure and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9716131-B2
Application number	US-201715436702-A
Country	US
Kind code	B2
Filing date	Feb 17, 2017
Priority date	May 13, 2015
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

A manufacturing method of an AMOLED backplane includes manufacturing a TFT substrate and forming a corrugation structure on the TFT substrate, which includes raised sections and recessed sections alternating each other; coating organic photoresist on the TFT substrate that includes the corrugation structure formed thereon to form a planarization layer in such a way that an upper surface of a portion of the planarization layer corresponding to and located above the corrugation structure includes a curved configuration corresponding to the corrugation structure; forming a pixel electrode on the planarization layer in such a way that the pixel electrode shows a curved configuration; and forming, in sequence, a pixel definition layer that has an opening to expose the curved configuration and a photo spacer on the pixel electrode and the planarization layer.

First claim

What is claimed is:

1. A manufacturing method of an active matrix organic light emitting display (AMOLED) backplane, comprising the following steps:
(1) manufacturing a thin-film transistor (TFT) substrate and forming a corrugation structure during the manufacturing of the TFT substrate, wherein the corrugation structure comprises a plurality of raised sections and a recessed section between every two adjacent ones of the raised sections;
(2) coating organic photoresist on the TFT substrate that comprises the corrugation structure formed thereon to form a planarization layer in such a way that an upper surface of a portion of the planarization layer corresponding to and located above the corrugation structure comprises a curved configuration corresponding to the corrugation structure;
(3) forming a pixel electrode on the planarization layer in such a way that the pixel electrode shows a curved configuration; and
(4) forming, in sequence, a pixel definition layer and a photo spacer on the pixel electrode and the planarization layer;
the pixel definition layer comprising an opening to expose the curved configuration of the pixel electrode.

2. The manufacturing method of the AMOLED backplane as claimed in claim 1 , wherein the corrugation structure is formed through an etching process.

3. A manufacturing method of an active matrix organic light emitting display (AMOLED) backplane, wherein the AMOLED backplane comprises multiple sub-pixels arranged in an array and each of the sub-pixels comprises: a thin-film transistor (TFT) substrate, the manufacturing method comprising the following steps:
(1) manufacturing the TFT substrate such that a corrugation structure is formed on the TFT substrate and comprises a plurality of raised sections and a recessed section between every two adjacent ones of the raised sections;
(2) coating organic photoresist on the TFT substrate that comprises the corrugation structure formed thereon to form a planarization layer in such a way that an upper surface of a portion of the planarization layer corresponding to and located above the corrugation structure comprises a curved configuration corresponding to the corrugation structure;
(3) forming a pixel electrode on the planarization layer in such a way that the pixel electrode shows a curved configuration; and
(4) forming, in sequence, a pixel definition layer and a photo spacer on the pixel electrode and the planarization layer, wherein the pixel definition layer comprises an opening to expose the curved configuration of the pixel electrode.

4. The manufacturing method of the AMOLED backplane as claimed in claim 3 , wherein the TFT substrate comprises a base plate, first and second gate terminals formed on the base plate and spaced from each other, a gate insulation layer formed on the first and second gate terminals and the base plate, first and second semiconductor layers formed on the gate insulation layer and respectively located on the first and second gate terminals, an etch stop layer formed on the first and second semiconductor layers and the gate insulation layer, a first source terminal formed on the etch stop layer and in contact engagement with the first semiconductor layer, a first drain terminal formed on the etch stop layer and in contact engagement with the first semiconductor layer and the second gate terminal, a second source terminal formed on the etch stop layer and in contact engagement with the second semiconductor layer, a second drain terminal formed on the etch stop layer and in contact engagement with the second semiconductor layer, and a protective layer formed on the etch stop layer, the first source and drain terminals, and the second source and drain terminals;
the first gate terminal, the first semiconductor layer, the first source terminal, and the first drain terminal constituting the switch TFT, the second gate terminal, the second semiconductor layer, the second source terminal, and the second drain terminal constituting the drive TFT, the second gate terminal and the second source terminal also constituting the capacitor, the pixel electrode being in contact engagement with the second drain terminal.

5. The manufacturing method of the AMOLED backplane as claimed in claim 4 , wherein the corrugation structure is formed in the protective layer of the TFT substrate.

6. The manufacturing method of the AMOLED backplane as claimed in claim 4 , wherein the protective layer and the etch stop layer comprise a material of silicon nitride, silicon oxide, or a combination thereof; and the first and second gate terminals, the first source and drain terminals and the second source and drain terminals comprise a material of one of molybdenum, titanium, aluminum, and copper, or a combination thereof.

7. The manufacturing method of the AMOLED backplane as claimed in claim 4 , wherein the pixel electrode comprises a material of indium tin oxide (ITO).

8. The manufacturing method of the AMOLED backplane as claimed in claim 3 , wherein the corrugation structure is formed on in a portion of or all the sub-pixels.

9. The manufacturing method of the AMOLED backplane as claimed in claim 4 , wherein the corrugation structure is formed in the protective layer and the etch stop layer of the TFT substrate.

10. The manufacturing method of the AMOLED backplane as claimed in claim 4 , wherein the TFT substrate further comprises a metal layer formed between the protective layer and the etch stop layer in the area corresponding to the opening of the pixel definition layer and the metal layer is formed simultaneously with the first source and drain terminals and the second source and drain terminals; and the corrugation structure is formed on the metal layer.

Assignees

• Shenzhen China Star Optoelect

Inventors

• Li Wenhui
• Wang Yifan

Classifications

• H01L2227/323

  Electricity · mapped topic

• H01L27/3258 Primary

  Electricity · mapped topic

• H01L27/1248

  Electricity · mapped topic

• H01L27/3246

  Electricity · mapped topic

• H01L2251/308

  Electricity · mapped topic