Fin field effect transistor

Patent metadata

Field	Value
Publication number	US-9716091-B2
Application number	US-201615194222-A
Country	US
Kind code	B2
Filing date	Jun 27, 2016
Priority date	Oct 13, 2010
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

A fin field effect transistor (FinFET) including a first insulation region and a second insulation region and fin there between. A gate stack is disposed over a first portion of the fin. A strained source/drain material is disposed over a second portion of the fin. The strained source/drain material has a flat top surface extending over the first and second insulation regions. The first insulation region may include a tapered top surface.

First claim

What is claimed is:

1. A device, comprising:
a first insulation region and a second insulation region disposed on a semiconductor substrate, wherein the first insulation region has a first width at a top portion and a second width at a bottom portion, wherein the first width is less than the second width;
a fin extending from the semiconductor substrate between the first and second insulation regions;
a gate stack over a first portion of the fin; and
a strained source/drain material over a second portion of the fin, wherein the strained source/drain material has a flat top surface extending over the first and second insulation regions.

2. The device of claim 1 , wherein a ratio of the first width to the second width is between approximately 0.05 and 0.95.

3. The device of claim 1 , wherein the first insulation region has a curved top surface.

4. The device of claim 1 , wherein a top surface of the first insulation region has a flat portion and two sloped sidewalls extending from the flat portion.

5. The device of claim 1 , wherein the strained source/drain material directly interfaces the flat portion and the two sloped sidewalls.

6. The device of claim 1 , wherein the first width is defined as a length of the flat portion.

7. The device of claim 1 , wherein the strained source/drain material includes at least one of silicon carbon and silicon germanium.

8. The device of claim 1 , wherein the strained source/drain material directly interfaces the first insulation region having the first width.

9. The device of claim 1 , wherein the second portion of the fin has a first height and the first portion of the fin has a second height, the first height less than the second height.

10. The device of claim 1 , wherein the first insulation region has a greatest height from the semiconductor substrate at a middle point of the first width.

11. A fin field effect transistor comprising:
a first fin extending from a top surface of a substrate and a second fin extending from the top surface of the substrate;
an insulation region interposing the first and second fins, wherein the insulation region includes a tapered top surface, wherein a first portion of each of the first fin and the second fin extends above the tapered top surface;
a gate stack over the first portion of the first fin and the second fin;
a semiconductor material adjacent the gate stack and over the first fin, the second fin, and the insulation region including the tapered top surface, wherein the semiconductor material forms a source or drain associated with the gate stack.

12. The transistor of claim 11 , wherein the semiconductor material is a contiguous strained material over the first fin, the second fin, and the insulation region.

13. The transistor of claim 12 , wherein the contiguous strained material directly interfaces the tapered top surface of the insulation region.

14. The transistor of claim 11 , wherein the semiconductor material is a strained material having a substantially flat top surface extending from over the first fin to over the second fin.

15. A fin field effect transistor (FinFET) comprising:
a first fin extending from a top surface of a substrate and a second fin extending from the top surface of the substrate;
an insulation region interposing the first and second fins;
a gate stack over the first portion of the first fin and the second fin;
a source/drain region adjacent the gate stack and over the first fin, the second fin, and the insulation region wherein the source/drain region includes a strained material having a substantially flat top surface extending from over the first fin to over the second fin.

16. The FinFET of claim 15 , wherein the insulation region includes a tapered top surface.

17. The FinFET of claim 15 , wherein the insulation region has a top surface above a top surface of each of the first fin and the second in the source/drain region.

18. The FinFET of claim 15 , wherein the strained material includes a first portion extending between a sidewall of the insulation region and a sidewall of an adjacent insulation region, wherein the first fin interposes the insulation region and the adjacent insulation region.

19. The FinFET of claim 15 , wherein the first fin has a top surface underlying the gate stack of a first height and the first fin has a top surface in the source/drain region of a second height, the first height being greater than the second height.

20. The FinFET of claim 15 , further comprising: a third fin extending from the top surface of the substrate and another insulating region interposing the third fin and the second fin, and wherein the substantially flat top surface of the strained material extends over the third fin.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lin Hung-Ta
• Fu Chu-Yun
• Chen Hung-Ming
• Yang Shu-Tine
• Huang Shin-Yeh

Classifications

• H10P14/6349

  Deposition of epitaxial materials · CPC title

• H01L29/7842

  Electricity · mapped topic

• H01L29/66636

  Electricity · mapped topic

• H01L29/66795

  Electricity · mapped topic

• H01L29/7848

  Electricity · mapped topic