Crystal laminate structure and method for producing same

Patent metadata

Field	Value
Publication number	US-9716004-B2
Application number	US-201214343355-A
Country	US
Kind code	B2
Filing date	Aug 2, 2012
Priority date	Sep 8, 2011
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

A crystal laminate structure, in which crystals can be epitaxially grown on a β-Ga 2 O 3 -based substrate with high efficiency to produce a high-quality β-Ga 2 O 3 -based crystal film on the substrate; and a method for producing the crystal laminate structure are provided. The crystal laminate structure includes: a β-Ga 2 O 3 -based substrate, of which the major face is a face that is rotated by 50 to 90° inclusive with respect to face; and a β-Ga 2 O 3 -based crystal film which is formed by the epitaxial crystal growth on the major face of the β-Ga 2 O 3 -based substrate.

First claim

The invention claimed is:

1. A crystal laminate structure, comprising:
a β-Ga 2 O 3 -based substrate comprising as a main surface a plane rotated by not less than 50° and not more than 90° with respect to a (100) plane; and
a β-Ga 2 O 3 -based crystal film provided on the main surface of the β-Ga 2 O 3 -based substrate,
wherein the β-Ga 2 O 3 -based crystal film is in a Schottky-contact with an electrode, and
wherein the β-Ga 2 O 3 -based substrate contains group II elements.

2. The crystal laminate structure according to claim 1 , wherein the main surface of the β-Ga 2 O 3 -based substrate comprises one of a (010) plane, a (001) plane, a (−201) plane, a (101) plane, and a (310) plane.

3. The crystal laminate structure according to claim 1 , wherein the β-Ga 2 O 3 -based substrate comprises Mg as the group II elements.

4. The crystal laminate structure according to claim 1 , wherein the β-Ga 2 O 3 - based crystal film comprises:
an i-type β-Ga 2 O 3 -based crystal film provided on the main surface of the β-Ga 2 O 3 -based substrate; and
an n-type β-(AlGa) 2 O 3 crystal film provided on the i-type β-Ga 2 O 3 -based crystal film, and that is in the Schottky-contact with the electrode.

5. The crystal laminate structure according to claim 4 , wherein the main surface of the β-Ga 2 O 3 -based substrate comprises one of a (010) plane, a (001) plane, a (−201) plane, a (101) plane, and a (310) plane.

6. The crystal laminate structure according to claim 4 , wherein the β-Ga 2 O 3 -based substrate comprises Mg as the group II elements.

7. The crystal laminate structure according to claim 1 , wherein the β-Ga 2 O 3 -based crystal film comprises an n-type β-Ga 2 O 3 -based crystal film.

8. The crystal laminate structure according to claim 7 , wherein the main surface of the β-Ga 2 O 3 -based substrate comprises one of a (010) plane, a (001) plane, a (−201) plane, a (101) plane, and a (310) plane.

9. The crystal laminate structure according to claim 7 , wherein the β-Ga 2 O 3 -based substrate comprises Mg as the group II elements.

10. The crystal laminate structure according to claim 1 , wherein the β-Ga 2 O 3 -based crystal film is in an ohmic-contact with another electrode.

11. The crystal laminate structure according to claim 1 , wherein the electrode comprises a gate electrode that is in the Schottky-contact with the β-Ga 2 O 3 -based crystal film.

12. The crystal laminate structure according to claim 11 , further comprising a source electrode and a drain electrode each being disposed on a same surface of the crystal laminate structure that the gate electrode is disposed, each of the source electrode and the drain electrode being in an ohmic-contact with the β-Ga 2 O 3 -based crystal film.

Assignees

• Sasaki Kohei
• Tamura Seisakusho Kk

Inventors

• Sasaki Kohei

Classifications

• H10P14/3602

  In-situ cleaning · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2918

  being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title