Magneto-resistive devices including a free layer having different magnetic properties during operations

Patent metadata

Field	Value
Publication number	US-9715915-B2
Application number	US-201514922530-A
Country	US
Kind code	B2
Filing date	Oct 26, 2015
Priority date	Oct 30, 2014
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

Magneto-resistive devices with lower power consumption and higher stability are provided. The magneto-resistive devices may include a pinned layer, a free layer and an insulating layer between the pinned layer and the free layer. The pinned layer, the free layer and the insulating layer may constitute a magnetic tunnel junction. The free layer may include a first magnetic layer and a second magnetic layer that has a Curie temperature lower than a Curie temperature of the first magnetic layer.

First claim

What is claimed is:

1. A magneto-resistive device comprising:
a magnetic tunnel junction comprising:
a pinned layer;
a free layer having a first magnetic anisotropy and comprising a first magnetic layer and a second magnetic layer, the second magnetic layer having a Curie temperature that is lower than a Curie temperature of the first magnetic layer and having a second perpendicular magnetic anisotropy; and
an insulating layer between the pinned layer and the free layer,
wherein the second magnetic layer has a perpendicular magnetic anisotropy constant that is higher than 5×10E5 J/m 3 .

2. The magneto-resistive device of claim 1 , wherein the Curie temperature of the second magnetic layer ranges from about 350K to about 500K.

3. The magneto-resistive device of claim 1 , wherein the first magnetic anisotropy is in-plane.

4. The magneto-resistive device of claim 1 , wherein the first magnetic anisotropy has a direction perpendicular to a surface of the free layer and a magnetic anisotropy constant that is in a range of about 2×10E5 J/m 3 to about 10E6 J/m 3 .

5. The magneto-resistive device of claim 1 , wherein the free layer further comprises a magnetic-coupling control layer that is between the first magnetic layer and the second magnetic layer and is configured to control a magnetic coupling between the first and second magnetic layers.

6. The magneto-resistive device of claim 1 , wherein the second magnetic layer comprises FePtCu, [Co/Pt]n, TbFeCo, Mn2RuGa, Mn2RuGe, or other ferromagnetic material.

7. The magneto-resistive device of claim 1 , wherein the magneto-resistive device has resistance of about 30 Ωμm 2 or less.

8. The magneto-resistive device of claim 1 , wherein the Curie temperature of the second magnetic layer is lower than a temperature of the second magnetic layer during a writing operation and is higher than a temperature of the second magnetic layer during a reading operation.

9. A magneto-resistive device comprising:
a magnetic tunnel junction comprising:
a pinned layer;
a free layer comprising a first magnetic layer that is configured to be paramagnetic during a writing operation and is configured to be ferromagnetic during a reading operation, wherein a writing current flows through the free layer during the writing operation; and
an insulating layer between the pinned layer and the free layer.

10. The device of claim 9 , wherein the free layer further comprises a second magnetic layer,
wherein the second magnetic layer is disposed between the insulating layer and the first magnetic layer, and the second magnetic layer is configured to be ferromagnetic during the writing operation.

11. The device of claim 10 , wherein the free layer further comprises a magnetic-coupling control layer disposed between the first magnetic layer and the second magnetic layer.

12. The device of claim 11 , wherein the magnetic-coupling control layer comprises Pd, Pt, Ru, MgO, Ta and/or W.

13. The device of claim 10 , wherein the first magnetic layer has a Curie temperature that is lower than a Curie temperature of the second magnetic layer.

14. The device of claim 9 , wherein the first magnetic layer has a magnetic anisotropy that is perpendicular to a surface of the first magnetic layer, and
wherein the surface of the first magnetic layer faces the pinned layer.

15. A magneto-resistive device comprising:
a magnetic tunnel junction comprising:
a pinned layer;
a free layer comprising a first magnetic layer having a first Curie temperature that is lower than a temperature of the first magnetic layer during a writing operation and is higher than a temperature of the first magnetic layer during a reading operation, wherein a writing current flows through the free layer during the writing operation; and
an insulating layer between the pinned layer and the free layer.

16. The device of claim 15 , wherein the free layer further comprises a second magnetic layer,
wherein the second magnetic layer is disposed between the insulating layer and the first magnetic layer, and the second magnetic layer has a second Curie temperature that is higher than the first Curie temperature.

17. The device of claim 16 , wherein the free layer further comprises a magnetic-coupling control layer disposed between the first magnetic layer and the second magnetic layer.

18. The device of claim 17 , wherein the magnetic-coupling control layer comprises Pd, Pt, Ru, MgO, Ta and/or W.

19. The device of claim 15 , wherein the first Curie temperature ranges from about 350K to about 500K.

Assignees

• Kita Eiji
• Sonobe Yoshiaki
• Samsung Electronics Co Ltd

Inventors

• Kita Eiji
• Sonobe Yoshiaki

Classifications

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/10

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• H01L43/02

  Electricity · mapped topic