Precursors for atomic layer deposition

Patent metadata

Field	Value
Publication number	US-9714464-B2
Application number	US-201314407238-A
Country	US
Kind code	B2
Filing date	Jun 11, 2013
Priority date	Jun 11, 2012
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, α-imino enolate compounds and α-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.

First claim

What is claimed is:

1. A compound having formula (I):

wherein:
M is a metal selected from groups 2 to 12 of the Periodic Table;
R 1 is C 1-8 alkyl, C 5-12 aryl, or NR 5 R 6 ;
R 2 is C 1-8 alkyl;
R 3 , R 4 are each independently hydrogen or C 1-8 alkyl; and
R 5 , R 6 are each independently C 1-8 alkyl with the proviso that when M is Cr, R 5 is C 2-8 alkyl.

2. The compound of claim 1 wherein M is Zn, Mg, Cr, Mn, Fe, Co, Ni, or Cu.

3. The compound of claim 1 wherein R 2 is t-butyl.

4. The compound of claim 1 wherein when R 1 is C 1-8 alkyl, M is Zn, Mg, Cr, Mn, Fe, Co, or Ni, and when R 1 is NR 5 R 6 , M is Zn, Mg, Mn, Fe, Co, or Ni.

5. The compound of claim 1 wherein R 1 is C 1-8 alkyl and M is Zn, Mg, Cr, Mn, Fe, Co, or Ni.

6. The compound of claim 1 wherein R 1 is NR 5 R 6 and M is Zn, Mg, Mn, Fe, Co, or Ni.

7. The compound of claim 1 wherein R 1 is C 1-8 alkyl.

8. The compound of claim 1 wherein R 1 is methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, t-butyl, or phenyl.

9. The compound of claim 1 wherein R 1 is t-butyl or N(CH 3 ) 2 .

10. A compound having formula 2:

wherein:
M is a metal selected from groups 2 to 12 of the Periodic Table;
R 7 , R 8 , R 9 are each independently hydrogen, C 1-8 alkyl, C 5-12 aryl, or C 5-12 heteroaryl; and
R 10 is C 1-8 alkyl, C 5-12 aryl, or C 5-12 heteroaryl.

11. The compound of claim 10 wherein M is Zn, Mg, Cr, Mn, Fe, Co, Ni, or Cu.

12. The compound of claim 10 wherein R 7 , R 8 , R 9 , R 10 are each independently C 1-8 alkyl.

13. The compound of claim 10 wherein R 10 is t-butyl.

14. A compound having formula (3):

M is a metal selected from groups 2 to 12 of the Periodic Table;
R 11 is C 1-8 alkyl, C 5-12 aryl, or C 5-12 heteroaryl; and
R 12 , R 13 are each independently hydrogen, C 1-8 alkyl, C 5-12 aryl, or C 5-12 heteroaryl.

15. The compound of claim 14 wherein M is Zn, Mg, Cr, Mn, Fe, Co, Ni, or Cu.

16. A method comprising:
a) reacting a compound having bidentate ligands with an reactive compound to form a first product, the compound having bidentate ligands being selected from the group consisting of:

wherein:
M is a metal selected from groups 2 to 12 of the Periodic Table;
R 1 is C 1-8 alkyl, C 5-12 aryl, or NR 5 R 6 ;
R 2 is C 1-8 alkyl;
R 3 , R 4 are each independently hydrogen or C 1-8 alkyl;
R 5 , R 6 are each independently C 1-8 alkyl with the proviso that when M is Zn, Mg, Cr, R 5 is C 2-8 alkyl;
R 7 , R 8 , R 9 are each independently hydrogen, C 1-8 alkyl, C 5-12 aryl, or C 5-12 heteroaryl; and
R 10 is C 1-8 alkyl, C 5-12 aryl, or C 5-12 heteroaryl;
R 11 is C 1-8 alkyl, C 5-12 aryl, or C 5-12 heteroaryl; and
R 12 , R 13 are each independently hydrogen, C 1-8 alkyl, C 5-12 aryl, or C 5-12 heteroaryl.

17. The method of claim 16 wherein M is Zn, Mg, Cr, Mn, Fe, Co, or Ni.

18. The method of claim 16 wherein the reactive compound is an oxidizing agent and the first product includes a metal oxide.

19. The method of claim 16 wherein the reactive compound is a reducing agent and the first product includes a metal in the zero oxidation state.

20. The method of claim 16 wherein the activating reactive compound is a nitriding agent and the first product includes a metal nitride.

21. The method of claim 16 comprising a deposition cycle including:
a) contacting a substrate with a vapor of the compound having bidentate ligands form a first modified surface; and
c) contacting the substrate with the reactive compound.

22. The method of claim 21 wherein a metal-containing layer is deposited on the substrate.

23. The method of claim 22 wherein the metal-containing layer includes a component selected from the group consisting of metals in the zero oxidation state, metal nitrides, metal oxides, and combinations thereof.

24. The method of claim 21 further comprising contacting the first modified surface with an acid.

25. The method of claim 16 wherein the compound having bidentate ligands has formula 1:

26. The method of claim 25 wherein M is Zn, Mg, Cr, Mn, Fe, Co, or Ni.

Assignees

• Univ Wayne State

Inventors

• Winter Charles H
• Kalutarage Lakmal C

Classifications

• C01B13/14

  Methods for preparing oxides or hydroxides in general (particular individual oxides or hydroxides, see the relevant groups of subclasses C01B - C01G or C25B, according to the element combined with the oxygen or hydroxy group) · CPC title

• C07F15/025

  without a metal-carbon linkage · CPC title

• C01B21/06

  Binary compounds of nitrogen with metals, with silicon, or with boron, {or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron}(azides C01B21/08) · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C22B23/00

  Obtaining nickel or cobalt · CPC title