Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell

Patent metadata

Field	Value
Publication number	US-9714262-B2
Application number	US-201314414865-A
Country	US
Kind code	B2
Filing date	Jul 19, 2013
Priority date	Jul 19, 2012
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR 1 ) m . In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R 1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

First claim

The invention claimed is:

1. A composition for forming a passivation layer, comprising a compound represented by the following Formula (I) and a compound represented by the following Formula (II):
M(OR 1 ) m   (I)

wherein, in Formula (I) and Formula (II),
M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf,
each R 1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms,
m represents an integer from 1 to 5,
each R 2 independently represents an alkyl group having from 1 to 8 carbon atoms,
n represents an integer from 1 to 3,
each of X 2 and X 3 independently represents an oxygen atom or a methylene group, and
each of R 3 , R 4 and R 5 independently represents a hydrogen atom or an alkyl group having from 1 to 8 carbon atoms,
wherein the weight/weight ratio of the compound represented by Formula (I) and the compound represented by Formula (II) is from 50/50 to 90/10 and having a fixed charge density of from −7.8×10 9 to −8.3×10 11 .

2. The composition for forming a passivation layer according to claim 1 , further comprising a liquid medium.

3. The composition for forming a passivation layer according to claim 1 , further comprising a resin.

4. The composition for forming a passivation layer according to claim 3 , wherein the composition further comprising a liquid medium, and a total content of the liquid medium and the resin being from 5% by mass to 98% by mass based on the total content of the composition.

5. The composition for forming a passivation layer according to claim 1 , wherein a total content of the compound represented by Formula (I) and the compound represented by Formula (II) being from 0.1% by mass to 80% by mass based on the total content of the composition.

6. A semiconductor substrate having a passivation layer, comprising:
the semiconductor substrate; and
the passivation layer that is a thermally-treated product of the composition for forming a passivation layer according to claim 1 that is provided at an entire or partial surface of the semiconductor substrate.

7. A photovoltaic cell element, comprising:
a semiconductor substrate having a pn junction of a p-type layer and an n-type layer;
a passivation layer that is a thermally-treated product of the composition for forming a passivation layer according to claim 1 and that is provided at an entire or partial surface of the semiconductor substrate; and
an electrode provided at at least one of the p-type layer or the n-type layer.

8. A photovoltaic cell, comprising;
the photovoltaic cell element according to claim 7 ; and
a wiring material provided on the electrode of the photovoltaic cell element.

Assignees

• Hitachi Chemical Co Ltd

Inventors

• Adachi Shuichiro
• Yoshida Masato
• Nojiri Takeshi
• Kurata Yasushi
• Tanaka Tooru
• Orita Akihiro
• Hayasaka Tsuyoshi
• Hattori Takashi
• Matsumura Mieko
• Watanabe Keiji
• Morishita Masatoshi
• Hamamura Hirotaka

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• C07F7/003

  without C-Metal linkages · CPC title

• C07F9/005 Primary

  Compounds of elements of Group 5 of the Periodic Table without metal-carbon linkages · CPC title

• C07F5/069

  without C-aluminium linkages · CPC title

• Y02P70/521

  Cross-Sectional Technologies · mapped topic