High temperature fiber and method of making
US-2024368041-A1 · Nov 7, 2024 · US
US9714197B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9714197-B2 |
| Application number | US-201214235763-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 26, 2012 |
| Priority date | Jul 28, 2011 |
| Publication date | Jul 25, 2017 |
| Grant date | Jul 25, 2017 |
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Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.
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The invention claimed is: 1. Polycrystalline diamond, comprising: carbon; an element of different type which is an element other than said carbon and is added to be dispersed in said carbon at an atomic level; and one or more inevitable impurities, the polycrystalline diamond having a crystal grain size not greater than 500 nm, wherein said polycrystalline diamond is fabricated by sintering graphite obtained by thermally decomposing a gas mixture of a gas containing said element of different type and a hydrocarbon gas at a temperature not lower than 1500° C., and wherein an amount of each inevitable impurity is approximately 0.01 mass % or lower in said graphite. 2. The polycrystalline diamond according to claim 1 , wherein said element of different type is dispersed in said carbon as a substitutional isolated atom. 3. The polycrystalline diamond according to claim 1 , wherein a concentration of said element of different type is not lower than 1×10 14 /cm 3 and not higher than 1×10 22 /cm 3 . 4. Polycrystalline diamond, comprising: carbon; a group III element added to be dispersed in said carbon at an atomic level; and one or more inevitable impurities, the polycrystalline diamond having a crystal grain size not greater than 500 nm, wherein said polycrystalline diamond is fabricated by sintering graphite obtained by thermally decomposing a gas mixture of a gas containing said group III element and a hydrocarbon gas at a temperature not lower than 1500° C., and wherein an amount of each inevitable impurity is approximately 0.01 mass % or lower in said graphite. 5. The polycrystalline diamond according to claim 4 , wherein said group III element is dispersed in said carbon as a substitutional isolated atom. 6. The polycrystalline diamond according to claim 4 , wherein a concentration of said group III element is not lower than 1×10 14 /cm 3 and not higher than 1×10 22 /cm 3 . 7. A scribe tool, comprising the polycrystalline diamond according to claim 4 . 8. A scribing wheel, comprising the polycrystalline diamond according to claim 4 . 9. A dresser, comprising the polycrystalline diamond according to claim 4 . 10. A rotating tool, comprising the polycrystalline diamond according to claim 4 . 11. An orifice for water jet, comprising the polycrystalline diamond according to claim 4 . 12. A wiredrawing die, comprising the polycrystalline diamond according to claim 4 . 13. A cutting tool, comprising the polycrystalline diamond according to claim 4 .
Particulate matter [e.g., sphere, flake, etc.] · CPC title
characterised by the composition of the materials to be processed · CPC title
Graphite · CPC title
Preparation (by using ultra-high pressure B01J3/06; by crystal growth C30B29/04) · CPC title
Diamond · CPC title
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