Reconfigurable power amplifier capable of selecting wide band frequency and method for selecting wide band frequency

Patent metadata

Field	Value
Publication number	US-9712123-B2
Application number	US-201615003669-A
Country	US
Kind code	B2
Filing date	Jan 21, 2016
Priority date	Feb 5, 2015
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

Provided is a power amplifier installed in wireless communication terminals and systems. According to one aspect of the present invention, a reconfigurable power amplifier capable of selecting a wide band frequency is provided. The reconfigurable power amplifier includes input transistors receiving a radio frequency (RF) signal and a reconfigurable adaptive power cell configured to select the wide band frequency by applying a common-gate bias voltage to a plurality of common-gate transistors with a plurality of separate common gates to amplify the RF signal.

First claim

What is claimed is:

1. A reconfigurable power amplifier capable of selecting a wide band frequency, the reconfigurable power amplifier comprising:
first and second input transistors configured to receive a radio frequency (RF) signal; and
a reconfigurable adaptive power stage including a first reconfigurable adaptive power cell (RAPC) and a second RAPC,
wherein the first RAPC comprises first and second transistors having respective first conduction terminals connected to the first input transistor and respective second conduction terminals connected to a first output,
wherein the second RAPC comprises third and fourth transistors having respective first conduction terminals connected to the second input transistor and respective second conduction terminals connected to a second output,
wherein respective gates of the first and third transistors are connected to a first common-gate bias voltage, and
wherein respective gates of the second and fourth transistors are connected to a second common-gate bias voltage,

wherein the reconfigurable adaptive power stage is configured to select the wide band frequency using one or more of the first and second common-gate bias voltages and to amplify the RF signal.

2. The reconfigurable power amplifier of claim 1 ,
wherein the first transistor has a first channel width,
wherein the second transistor has a second channel width,
wherein the third transistor has a channel width substantially the same as the first channel width,
wherein the fourth transistor has a channel width substantially the same as the second channel width, and
wherein the first channel width and the second channel width are substantially different from each other.

3. The reconfigurable power amplifier of claim 1 , wherein the first common-gate bias voltage and the second common-gate bias voltage are independent of each other.

4. The reconfigurable power amplifier of claim 2 , wherein a number of transistors in the first and second RAPCs having the first channel width is the same as a number of transistors in the first and second RAPCs having the second channel width.

5. The reconfigurable power amplifier of claim 2 , wherein a number of transistors in the first and second RAPCs having the first channel width is different from a number of transistors in the first and second RAPCs having the second channel width.

6. The reconfigurable power amplifier of claim 1 , wherein each of the first to fourth transistors includes one of a complementary metal oxide semiconductor (CMOS) transistor, a gallium arsenide (GaAs) transistor, a hetero junction transistor (HBT), and a high electron mobility transistor (HEMT).

7. A reconfigurable power amplifier capable of selecting a wide band frequency, comprising:
a power stage comprising a first reconfigurable adaptive power cell (RAPC) and a second RAPC, and configured to select the wide band frequency using first and second common-gate bias voltage and to amplify the RF signal; and
a driver stage configured to amplify an input signal to generate the RF signal which can be amplified by the power stage,
wherein the first RAPC comprises first and second transistors having respective first conduction terminals coupled to a first output of the driver stage and respective second conduction terminals connected to a first output of the power stage,
wherein the second RAPC comprises third and fourth transistors having respective first conduction terminals coupled to a second output of the driver stage and respective second conduction terminals connected to a second output of the power stage,
wherein respective gates of the first and third transistors are connected to the first common-gate bias voltage, and
wherein respective gates of the second and fourth transistors are connected to the second common-gate bias voltage.

8. The reconfigurable power amplifier of claim 7 ,
wherein the first and third transistors each have a first channel width; and
wherein the second and fourth transistors have a second channel width, and
wherein the first channel width and the second channel width are different from each other.

9. The reconfigurable power amplifier of claim 7 , wherein the first common-gate bias voltage and the second common-gate bias voltage are independent of each other.

10. The reconfigurable power amplifier of claim 8 , wherein a number of transistors in the first and second RAPCs having the first channel width is the same as a number of transistors in the first and second RAPCs having the second channel width.

11. The reconfigurable power amplifier of claim 8 , wherein a number of transistors in the first and second RAPCs having the first channel width is different from a number of transistors in the first and second RAPCs having the second channel width.

12. The reconfigurable power amplifier of claim 7 , wherein the driver stage includes a plurality of driver stages.

13. The reconfigurable power amplifier of claim 7 , wherein each of the first and second RAPCs is configured to operate as a cascade stage.

14. The reconfigurable power amplifier of claim 1 , wherein each of the first and second RAPCs is configured to operate as a cascade stage.

Assignees

• Electronics & Telecommunications Res Inst

Inventors

• Park Min
• Kim Baek-Hyun
• Kim Cheon-Soo
• Hong Song-Cheol
• Kang Dong-Woo
• Choi Jang-Hong

Classifications

• H03F2200/111

  the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not · CPC title

• H03F3/45188

  Non-folded cascode stages · CPC title

• H03F3/193

  with field-effect devices (H03F3/195 takes precedence) · CPC title

• H03F1/42 Primary

  Modifications of amplifiers to extend the bandwidth · CPC title

• H03F1/0277

  Selecting one or more amplifiers from a plurality of amplifiers · CPC title