Integrated semiconductor optical element and manufacturing method for same

Patent metadata

Field	Value
Publication number	US-9711938-B2
Application number	US-201514947067-A
Country	US
Kind code	B2
Filing date	Nov 20, 2015
Priority date	May 23, 2013
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

The present invention relates to an optical semiconductor integrated element and manufacturing method for same solves difficulty in element manufacture, and reduces optical transmission loss. The present invention is provided with a stripe-shaped waveguide configured from a multilayer structure wherein at least a first conductivity-type lower cladding layer, a waveguide core layer, and an upper cladding layer are layered, and the upper cladding layer is formed using a second conductivity-type upper cladding layer, and an i-type upper cladding layer, which has a bent portion by being shifted in the perpendicular direction with respect to the main extending direction of the waveguide.

First claim

What is claimed is:

1. An integrated semiconductor optical element, comprising a waveguide in stripe form having a multilayer structure where at least a first conductivity type lower clad layer, a waveguide core layer and an upper clad layer are layered on top of a semiconductor substrate, characterized in that
the upper clad layer has: second conductivity type upper clad layer portions that are of the conductivity type opposite to the first conductivity type and are separated from each other in the direction in which the waveguide runs; and an i type upper clad layer portion that connects the separated second conductivity type upper clad layer portions, and
at least one waveguide region provided with the first conductivity type lower clad layer, the waveguide core layer and the i type upper clad layer portion and at least two waveguide regions provided with the first conductivity type lower clad layer, the waveguide core layer and the second conductivity type upper clad layer portion are shifted from each other in the direction perpendicular to the direction in which a main portion of the waveguide runs, and the waveguide region provided with the first conductivity type lower clad layer, the waveguide core layer and the i type upper clad layer portion and the waveguide regions provided with the first conductivity type lower clad layer, the waveguide core layer and the second conductivity type upper clad layer portion are connected through bent portions.

2. The integrated semiconductor optical element according to claim 1 , characterized in that the waveguide in stripe form is embedded in a dielectric oxide film and an organic insulator.

3. The integrated semiconductor optical element according to claim 1 , characterized in that the waveguide in stripe form is embedded in a semi-insulating semiconductor layer.

4. The integrated semiconductor optical element according to claim 1 , characterized in that the i type upper clad layer portion is bent in arc form.

5. The integrated semiconductor optical element according to claim 1 , characterized in that the waveguide region provided with the first conductivity type lower clad layer, the waveguide core layer and the i type upper clad layer portion and the waveguide regions provided with the first conductivity type lower clad layer, the waveguide core layer and the second conductivity type upper clad layer portion have a linear portion that is parallel to the main direction in which the waveguide runs and bent portions connected to the two ends of the linear portion, and
a bent portion of the waveguide region provided with the first conductivity type lower clad layer, the waveguide core layer and the i type upper clad layer portion and a bent portion of the waveguide regions provided with the first conductivity type lower clad layer, the waveguide core layer and the second conductivity type upper clad layer portion are connected to form a waveguide portion in S shape.

6. The integrated semiconductor optical element according to claim 1 , characterized in that
one of the waveguide regions provided with the first conductivity type lower clad layer, the waveguide core layer and the second conductivity type upper clad layer portion is a distributed feedback semiconductor laser,
another of the waveguide regions provided with the first conductivity type lower clad layer, the waveguide core layer and the second conductivity type upper clad layer portion facing the distributed feedback semiconductor laser with the waveguide region provided with the first conductivity type lower clad layer, the waveguide core layer and the i type upper clad layer portion in between is either an optical modulator or a semiconductor optical amplifier, and
a diffraction grating is formed in at least a portion of the multilayer structure of the waveguide region including the distributed feedback semiconductor laser.

7. The integrated semiconductor optical element according to claim 6 , characterized in that the waveguide core layer having the multilayer structure is a multiple quantum well active layer.

8. The integrated semiconductor optical element according to claim 1 , characterized by having:
two modulation waveguide arms where the i type upper clad layer portions and the second conductivity type upper clad layer portions are aligned so as to alternate;
1×2 couplers connected to the two ends of the two modulation waveguide arms;
an input waveguide connected to one of the 1×2 couplers;
an output waveguide connected to the other 1×2 coupler; and
electrodes individually provided to regions that correspond to the second conductivity type upper clad layer portions in the two modulation waveguide arms.

9. The integrated semiconductor optical element according to claim 8 , characterized in that the waveguide regions provided with the first conductivity type lower clad layer, the waveguide core layer and the i type upper clad layer portion are bent in arc form.

10. The integrated semiconductor optical element according to claim 9 , characterized in that the waveguide regions provided with the first conductivity type lower clad layer, the waveguide core layer and the second conductivity type upper clad layer portion are bent in arc form in the opposite direction to the direction in which the waveguide regions provided with the first conductivity type lower clad layer, the waveguide core layer and the i type upper clad layer portion are bent.

11. The integrated semiconductor optical element according to claim 1 , characterized by having a second conductivity type contact layer on the second conductivity type upper clad layer portions.

Assignees

• Fujitsu Ltd

Inventors

• Takabayashi Kazumasa
• Yamamoto Tsuyoshi

Classifications

• H01S5/2275

  mesa created by etching · CPC title

• H01S5/0265

  Intensity modulators (intra-cavity modulators H01S5/0625) · CPC title

• G02F1/025

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• H01S5/12

  the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18) · CPC title

• H01S5/40

  Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30 (H01S5/50 takes precedence) · CPC title