Microwave Chip Package Device
US-2016043455-A1 · Feb 11, 2016 · US
US9711860B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9711860-B2 |
| Application number | US-201514825199-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 13, 2015 |
| Priority date | Aug 13, 2015 |
| Publication date | Jul 18, 2017 |
| Grant date | Jul 18, 2017 |
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A wireless electronic device includes a Substrate Integrated Waveguide (SIW), a first metal layer including one or more top wave traps, a second metal layer, a feeding structure extending through the first metal layer and into the SIW, and a reflector on the first side of the SIW. The reflector directly connects to the first metal layer and extends outward along a major plane of the first side of the first metal layer. The wireless electronic device is configured to resonate at a resonant frequency when excited by a signal transmitted or received though the feeding structure. The one or more top wave traps are configured to trap a signal radiated by the reflector based on the signal transmitted or received though the feeding structure.
Opening claim text (preview).
What is claimed is: 1. A wireless electronic device comprising: a Substrate Integrated Waveguide (SIW); a first metal layer on a first side of the SIW, the first metal layer comprising one or more top wave traps, each directly connected to the first metal layer and extending outward along a major plane of a first side of the first metal layer; a second metal layer on a second side of the SIW, opposite the first side of the SIW; a feeding structure extending through the first metal layer and into the SIW; and a reflector on the first side of the SIW, the reflector directly connected to the first metal layer and extending outward along a major plane of the first side of the first metal layer, wherein the wireless electronic device is configured to resonate at a resonant frequency when excited by a signal transmitted or received through the feeding structure, and wherein the one or more top wave traps are configured to shape a signal radiated by the reflector based on the signal transmitted or received through the feeding structure. 2. The wireless electronic device of claim 1 , wherein the second metal layer comprises one or more bottom wave traps each directly connected to the second metal layer and extending outward along a major plane of a first side of the second metal layer, and wherein the one or more bottom wave traps are vertically aligned with respective ones of the top wave traps. 3. The wireless electronic device of claim 1 , wherein the feeding structure comprises: a feed via; a ring structure spaced apart from and surrounding the feed via; and an insulator between the ring structure and the feed via. 4. The wireless electronic device of claim 3 , wherein a radius of the ring structure and/or a width of the ring structure are, configured to impedance match a signal feeding element that is electrically coupled to the feeding structure. 5. The wireless electronic device of claim 1 , wherein the feeding structure extends from the first metal layer through the SIW to the second metal layer. 6. The wireless electronic device of claim 1 , wherein the one or more top wave traps comprise: a first top wave trap on a first side of the feeding structure, and a second top wave trap on a second side of the feeding structure that is opposite the first side of the feeding structure. 7. The wireless electronic device of claim 6 , wherein the first top wave trap and the second top wave trap are equally distant from the feeding structure. 8. The wireless electronic device of claim 6 , wherein the first top wave trap, the second top wave trap and the reflector are approximately parallel to one another along a major plane of the first side of the SIW, and wherein the reflector is spaced apart from and/or equally distant from the first top wave trap and the second top wave trap. 9. The wireless electronic device of claim 8 , wherein the first top wave trap and the second top wave trap are directly connected to the first metal layer and do not overlap the SIW. 10. The wireless electronic device of claim 1 , wherein the first metal layer comprises a plurality of top via holes spaced apart along the first metal layer overlapping the SIW, wherein the second metal layer comprises a plurality of bottom via holes that are approximately vertically aligned with respective ones of the plurality of top via holes, and wherein the feeding structure is between at least two of the plurality of top via holes in the first metal layer. 11. The wireless electronic device of claim 1 , wherein a first top wave trap of the one or more top wave traps comprises a notch in the first metal layer, and wherein a first portion of the first top wave trap on one side of the notch is parallel to and spaced apart from a second portion of the first top wave trap on another side of the notch. 12. The wireless electronic device of claim 11 , wherein the first top wave trap and the second top wave trap are equally distant from the feeding structure, and wherein the first portion of the first top wave trap and the second portion of the first top wave trap extend equally distant away from the SIW. 13. The wireless electronic device of claim 11 , wherein a length of the first portion of the first top wave trap extending away from the SIW is between 0.25 effective wavelengths and 0.5 effective wavelengths of the resonant frequency, and wherein a length of the second portion of the first top wave trap extending away from the SIW is between 0.25 effective wavelengths and 0.5 effective wavelengths of the resonant frequency. 14. The wireless electronic device of claim 1 , wherein a length of the reflector extending away from the SIW is between 0.25 effective wavelengths and 0.5 effective wavelengths of the resonant frequency. 15. The wireless electronic device of claim 2 , the wireless electronic device further comprising: one or more additional SIWs; one or more additional feeding structures extending through the first metal layer, wherein the one or more additional feeding structures are associated with respective ones of the additional SIWs; and one or more additional reflectors on the first side or the second side of the SIW, wherein the one or more additional reflectors are associated with respective ones of the additional SIWs and extend outward along a major plane of the first side of the first metal layer or along a major plane of a first side of the second metal layer. 16. The wireless electronic device of claim 15 , wherein one of the additional reflectors associated with one of the additional SIWs that is adjacent to the SIW is on the second metal layer and extends outward along a major plane of a first side of the second metal layer. 17. A wireless electronic device comprising: a plurality of Substrate Integrated Waveguides (SIWs) spaced apart of one another and arranged in a plane; a first metal layer on a first side of the SIWs, the first metal layer comprising a plurality of top wave traps, wherein the plurality of top wave traps each are directly connected to the first metal layer and extend outward along a major plane of a first side of the first metal layer; a second metal layer on a second side of the SIWs, opposite the first side of the SIWs, the second metal layer comprising a plurality of bottom wave traps, wherein the plurality of bottom wave traps each are directly connected to the second metal layer and extend outward along a major plane of a first side of the second metal layer; a plurality of feeding structures associated with respective ones of the SIWs, the plurality of feeding structures extending through the first metal layer and into the associated SIW; and a plurality of reflectors directly connected to and extending outward along the major plane of either the first metal layer or the second metal layer, wherein respective ones of the plurality of reflectors are associated with respective ones of the SIW, wherein a first reflector of the plurality of reflectors is associated with a first SIW of the plurality of the SIWs and extends outward along the first side of the first metal layer, wherein a second reflector of the plurality of reflectors is associated with a second SIW of the plurality of SIWs that is adjacent the first SIW, and extends outward along the first side of the second metal layer, wherein the wireless electronic device is configured to resonate at a resonant frequency when excited by a signal transmitted or received through at least one of the feeding structures, and wherein a first top wave trap and a second top wave t
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