Organic light emitting display apparatus and method for manufacturing the same

US9711749B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9711749-B2
Application numberUS-201514812780-A
CountryUS
Kind codeB2
Filing dateJul 29, 2015
Priority dateDec 2, 2014
Publication dateJul 18, 2017
Grant dateJul 18, 2017

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An organic light emitting display (OLED) device, and a method for manufacturing the OLED device are discussed. The OLED device according to one embodiment includes a substrate; an anode formed on the substrate; a bank formed on the substrate to partially overlap the anode; an organic light emitting element including a portion of a common layer on the anode and another portion of the common layer on the bank, the portion of the common layer on the bank being thinner than the another portion of the common layer on the anode; and a cathode fanned above the portion of the common layer on the anode and the another portion of the common layer on the bank.

First claim

Opening claim text (preview).

What is claimed is: 1. An organic light emitting display (OLED) device comprising: a substrate; an anode on the substrate; a bank on the substrate to partially overlap the anode; an organic light emitting element including a common layer on the anode and the bank, a thickness of the common layer on the bank being smaller than a thickness of the common layer on the anode; and a cathode above the common layer on the anode and the bank, wherein the common layer included in the organic light emitting element includes a first organic light emission layer, a n-type charge generation layer on the light emission layer, a p-type charge generation layer on the n-type charge generation layer, and a second organic light emission layer on the p-type charge generation layer, and wherein a thickness of each of the n-type charge generation layer and the p-type charge generation layer on the bank is smaller, respectively, than a thickness of each of the n-type charge generation layer and the p-type charge generation layer on the anode. 2. The OLED device according to claim 1 , wherein the common layer included in the organic light emitting element further includes a hole injection layer. 3. The OLED device according to claim 2 , wherein a thickness of the hole injection layer on a starting point of the bank is greater than a thickness of the hole injection layer on a center of the anode, and wherein a thickness of the hole injection layer on a center of the bank is smaller than the thickness of the hole injection layer on the center of the anode. 4. The OLED device according to claim 1 , wherein the common layer on a portion of the bank overlapping the anode includes the first organic light emitting layer and the second organic light emitting layer and the common layer on a center of the bank does not include the first organic light emitting layer and the second organic light emitting layer. 5. The OLED device according to claim 1 , wherein the common layer included in the organic light emitting element further includes a hole injection layer, a hole transporting layer, and an electron transporting layer. 6. The OLED device according to claim 5 , wherein a thickness of each of the hole injection layer, the hole transporting layer, the organic light emitting layer, and the electron transporting layer on the bank is smaller, respectively, than a thickness of each of the hole injection layer, the hole transporting layer, and the electron transporting layer on the anode. 7. The OLED device according to claim 5 , wherein the hole injection layer extends from the anode and ascends to the bank, and has a smaller thickness on the bank than a thickness on a starting point of the bank. 8. The OLED device according to claim 1 , wherein a thickness of each of the n-type charge generation layer and the p-type charge generation layer on a starting point of the bank is greater, respectively, than a thickness of each of the n-type charge generation layer and the p-type charge generation layer on a center of the anode. 9. The OLED device according to claim 1 , wherein the n-type charge generation layer is doped with a conductive material in an amount of 2.0% or more of a weight of the n-type charge generation layer. 10. A method for manufacturing an organic light emitting display (OLED) device, the method comprising: forming an anode on a substrate; forming a bank on the substrate to partially overlap the anode; forming an organic light emitting element including a common layer on the anode and the bank, a thickness of the common layer on the bank being smaller than a thickness of the common layer on the anode; and forming a cathode above the common layer on the anode and the bank, wherein the common layer included in the organic light emitting element includes a first organic light emission layer, an n-type charge generation layer on the light emission layer, a p-type charge generation layer on the n-type charge generation layer, and a second organic light emission layer on the p-type charge generation layer, and wherein a thickness of each of the n-type charge generation layer and the p-type charge generation layer on the bank is smaller, respectively, than a thickness of each of the n-type charge generation layer and the p-type charge generation layer on the anode. 11. The method according to claim 10 , wherein at least one of the first organic light emission layer and the second organic light emission layer is formed by a heat treatment including irradiating a laser beam to the bank while forming the organic light emission element. 12. The method according to claim 11 , wherein heat treatment causes some material in the common layer to flow down and gather at a base of the bank. 13. The method according to claim 10 , wherein the common layer included in the organic light emitting element further includes a hole injection layer. 14. The method according to claim 13 , wherein a thickness of the hole injection layer on a starting point of the bank is greater than a thickness of the hole injection layer on a center of the anode, and wherein a thickness of the hole injection layer on the center of the bank is smaller than the thickness of the hole injection layer on a center of the anode.

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What does patent US9711749B2 cover?
An organic light emitting display (OLED) device, and a method for manufacturing the OLED device are discussed. The OLED device according to one embodiment includes a substrate; an anode formed on the substrate; a bank formed on the substrate to partially overlap the anode; an organic light emitting element including a portion of a common layer on the anode and another portion of the common laye…
Who is the assignee on this patent?
Lg Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01L51/5088. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).