Method for manufacturing an electronic device

Patent metadata

Field	Value
Publication number	US-9711707-B2
Application number	US-201414161167-A
Country	US
Kind code	B2
Filing date	Jan 22, 2014
Priority date	Jan 23, 2013
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

A method for manufacturing an electronic device includes a through electrode forming step of forming a through electrode on an insulating base substrate; an electronic element mounting step of mounting an electronic element on one surface of the base substrate; a cover body placing step of bonding a cover body accommodating the electronic element; a conductive film forming step of forming a conductive film on the other surface of the base substrate and on an end face of the through electrode exposing on the other surface; an electrode pattern forming step of forming an electrode pattern on the end face of the through electrode and on the surface of the periphery of the end face while leaving the conductive film; and an external electrode forming step of forming an external electrode by accumulating an electroless plated film on the surface of the electrode pattern by an electroless plating method.

First claim

What is claimed is:

1. A method for manufacturing an electronic device including
providing an insulating base substrate having a first surface opposite a second surface;
forming a through electrode in the insulating base substrate, the through electrode comprising a metal body filling a through-hole of the insulating base substrate, such that the metal body has an end face having flat surface and continuous with at least the second surface of the insulating base substrate;
mounting an electronic element on the first surface of the insulating base substrate;
bonding a cover body accommodating the electronic element therein to the insulating base substrate;
forming a conductive film on the second surface of the insulating base substrate and on the end face of the through electrode exposed on the second surface;
forming an electrode pattern by leaving a portion of the conductive film on the end face of the through electrode and on the second surface at a periphery of the end face of the through electrode; and
forming an external electrode by accumulating an electroless plated film on a top surface and a side surface of the of the electrode pattern by an electroless plating method; and
forming a metal film on the surface of the electroless plated film.

2. The method for manufacturing an electronic device according to claim 1 , wherein forming the external electrode is carried out after mounting the electronic element and bonding the cover body.

3. The method for manufacturing an electronic device according to claim 1 , wherein the metal body of the through electrode is composed of an iron-nickel based alloy.

4. The method for manufacturing an electronic device according to claim 1 , wherein the electroless plated film is a nickel film or a copper film.

5. The method for manufacturing an electronic device according to claim 1 , wherein the metal film is a gold thin film.

6. The method for manufacturing an electronic device according to claim 1 , wherein the electroless plated film has a thickness of from 1 μm to 10 μm.

Assignees

• Seiko Instr Inc

Inventors

• Kozuki Atsushi

Classifications

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10W72/00 Primary

  Interconnections or connectors in packages · CPC title

• H01L2924/00

  Electricity · mapped topic

• Y10T29/4913

  Assembling to base an electrical component, e.g., capacitor, etc. · CPC title