Image sensors with color filter windows

Patent metadata

Field	Value
Publication number	US-9711551-B2
Application number	US-201615150997-A
Country	US
Kind code	B2
Filing date	May 10, 2016
Priority date	Nov 9, 2015
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

An imaging pixel may include an upper substrate layer with a photosensitive layer and a lower substrate with a photosensitive layer. A color filter layer may be formed over the upper substrate layer. The color filter layer may include a color filter window that allows light to pass through the upper substrate layer to the photosensitive layer in the lower substrate. The color filter window may be formed from a dielectric material or from a color filter element with a different color than the surrounding color filter element. A metal interconnect layer may couple the lower substrate layer to the upper substrate layer. The color filter window may be formed in the central portion of a pixel, or between multiple pixels in an image sensor.

First claim

What is claimed is:

1. An imaging pixel comprising:
an upper substrate layer;
a lower substrate layer;
a first photodiode in the upper substrate layer;
a second photodiode in the lower substrate layer; and
a color filter layer formed over the upper substrate layer, wherein the color filter layer has first and second opposing surfaces, wherein the color filter layer has an opening that extends from the first surface to the second surface, wherein the opening allows light to pass through the first photodiode to the second photodiode, and wherein the opening overlaps the second photodiode without overlapping the first photodiode.

2. The imaging pixel defined in claim 1 , wherein the opening in the color filter layer is filled with dielectric material.

3. The imaging pixel defined in claim 1 , wherein the color filter layer has a first color, wherein the opening in the color filter layer is filled with a color filter element that has a second color, and wherein the first and second colors are different.

4. The imaging pixel defined in claim 3 , wherein the color filter element is a clear color filter element.

5. The imaging pixel defined in claim 1 , wherein the upper substrate layer comprises a silicon layer and a dielectric layer, wherein the first photodiode is formed in the silicon layer, and wherein metal interconnect routing paths are formed in the dielectric layer.

6. The imaging pixel defined in claim 5 , wherein the opening in the color filter layer is filled with the dielectric layer.

7. The imaging pixel defined in claim 5 , wherein silicon layer has an additional opening that overlaps the opening in the color filter layer.

8. The imaging pixel defined in claim 5 , wherein the opening in the color filter layer is filled with plurality of color filters with different colors.

9. The imaging pixel defined in claim 5 , wherein the opening in the color filter layer is filled with a color filter element and the dielectric layer.

10. The imaging pixel defined in claim 5 , wherein the lower substrate layer comprises an additional silicon layer and an additional dielectric layer, wherein the second photodiode is formed in the additional silicon layer, and wherein additional metal interconnect routing paths are formed in the additional dielectric layer.

11. The imaging pixel defined in claim 10 , further comprising:
an interconnect layer that couples the metal interconnect routing paths to the additional interconnect routing paths.

12. The imaging pixel defined in claim 1 , further comprising:
a microlens formed over the opening in the color filter layer, wherein the microlens overlaps the second photodiode.

13. The imaging pixel defined in claim 12 , further comprising:
an additional microlens formed over the first photodiode.

14. An imaging pixel comprising:
a first wafer with a first photosensitive layer, wherein the first photosensitive layer is a ring-shaped photosensitive layer with an opening;
a second wafer with a second photosensitive layer, wherein the second photosensitive layer is formed beneath the opening in the ring-shaped photosensitive layer; and
a color filter layer that overlaps the first photosensitive layer, wherein the color filter layer comprises a window that overlaps the opening of the ring-shaped photosensitive layer and the second photosensitive layer.

15. The imaging pixel defined in claim 14 , wherein the window comprises a dielectric material.

16. The imaging pixel defined in claim 14 , wherein the color filter layer has a first color, wherein the window comprises a color filter element that has a second color, and wherein the first and second colors are different.

17. The imaging pixel defined in claim 14 , wherein the first and second wafers are coupled together by a metal interconnect layer.

18. The imaging pixel defined in claim 14 , further comprising:
a first microlens formed over the first photosensitive layer;
a second microlens formed over the second photosensitive layer, wherein the second microlens is completely surrounded by the first microlens; and
a third microlens formed over the first and second photosensitive layers.

19. An image sensor comprising:
a substrate layer that comprises a silicon layer and a dielectric layer;
a first plurality of photodiodes positioned in a first plane, wherein the first plurality of photodiodes are formed in the silicon layer of the substrate layer;
metal interconnect routing paths formed in the dielectric layer;
a color filter array with a plurality of color filter elements, wherein the color filter array has first and second opposing surfaces and wherein each color filter element of the plurality of color filter elements overlaps a respective photodiode of the first plurality of photodiodes; and
a second photodiode positioned in a second plane that is different from the first plane, wherein the color filter array comprises an opening that extends from the first surface to the second surface, wherein the opening overlaps the second photodiode to allow light to reach the second photodiode, and wherein the opening in the color filter array is filled with dielectric material of the dielectric layer.

20. The image sensor defined in claim 19 , wherein the first plurality of photodiodes are positioned a first distance from the color filter array, wherein the second photodiode is positioned a second distance from the color filter array, and wherein the second distance is greater than the first distance.

21. The image sensor defined in claim 19 , wherein the opening is formed in a single color filter element of the plurality of color filter elements.

22. The image sensor defined in claim 19 , wherein the opening is formed between at least two color filter elements of the plurality of color filter elements.

Assignees

• Semiconductor Components Ind Llc

Inventors

• Silsby Christopher

Classifications

• H01L27/14621 Primary

  Electricity · mapped topic

• H01L27/14627

  Electricity · mapped topic

• H10F39/811

  Interconnections · CPC title

• H10F39/802

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title

• H10F39/199

  Back-illuminated image sensors · CPC title