Imaging device

Patent metadata

Field	Value
Publication number	US-9711549-B2
Application number	US-201615238990-A
Country	US
Kind code	B2
Filing date	Aug 17, 2016
Priority date	Mar 13, 2014
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

An imaging device which is capable of taking images with high quality and can be manufactured at low cost is provided. A first circuit includes a first transistor and a second transistor and a second circuit includes a third transistor and a photodiode. The first transistor and the third transistor are each an n-channel transistor including an oxide semiconductor layer as an active layer, and the second transistor is a p-channel transistor including an active region in a silicon substrate. The photodiode is provided in the silicon substrate. A region in which the first transistor and the second transistor overlap each other with an insulating layer positioned therebetween is provided. A region in which the third transistor and the photodiode overlap each other with the insulating layer positioned therebetween is provided.

First claim

The invention claimed is:

1. An imaging device comprising:
a first transistor comprising a first oxide semiconductor; and
a photodiode in a silicon substrate, the photodiode comprising a first electrode and a second electrode;
wherein the first electrode is electrically connected to one of a source electrode and a drain electrode of the first transistor, and
wherein the first electrode and a gate electrode of the first transistor overlap each other.

2. The imaging device according to claim 1 , wherein the first electrode, the second electrode and the gate electrode of the first transistor overlap one another.

3. The imaging device according to claim 1 , wherein the first transistor is a transfer transistor.

4. The imaging device according to claim 1 , further comprising:
a second transistor comprising a second oxide semiconductor; and
a third transistor comprising a third oxide semiconductor,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor and one of a source electrode and a drain electrode of the second transistor.

5. The imaging device according to claim 4 , wherein the second transistor is an amplifying transistor.

6. The imaging device according to claim 4 , wherein the third transistor is a reset transistor.

7. The imaging device according to claim 1 , wherein the first transistor overlap the source electrode and the second electrode of the first transistor.

8. The imaging device according to claim 1 , wherein a plane orientation of a crystal in a first surface of the silicon substrate is (110).

9. The imaging device according to claim 1 ,
wherein the first electrode is positioned on a first surface of the silicon substrate, and
wherein the second electrode is positioned on a second surface of the silicon substrate.

10. The imaging device according to claim 1 , further comprising a contact plug over the second electrode,
wherein the contact plug is electrically connected to the second electrode.

11. An electronic appliance comprising the imaging device according to claim 1 .

12. An imaging device comprising:
a first transistor; and
a photodiode in a silicon substrate, the photodiode comprising a first electrode and a second electrode;
wherein the first transistor is an n-channel transistor comprising an oxide semiconductor layer as an active layer,
wherein the first electrode is electrically connected to one of a source electrode and a drain electrode of the first transistor, and
wherein the first electrode and the gate electrode of the first transistor overlap each other.

13. The imaging device according to claim 12 , further comprising:
a second transistor comprising a second oxide semiconductor; and
a third transistor comprising a third oxide semiconductor,
wherein each of the second transistor and the third transistor is an n-channel transistor comprising the oxide semiconductor layer as an active layer, and
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor and one of a source electrode and a drain electrode of the second transistor.

14. The imaging device according to claim 12 , wherein the first transistor overlap the source electrode and the second electrode of the first transistor.

15. The imaging device according to claim 12 , wherein a plane orientation of a crystal in a first surface of the silicon substrate is (110).

16. The imaging device according to claim 12 ,
wherein the first electrode is positioned on a first surface of the silicon substrate, and
wherein the second electrode is positioned on a second surface of the silicon substrate.

17. The imaging device according to claim 12 , further comprising a contact plug over the second electrode,
wherein the contact plug is electrically connected to the second electrode.

18. The imaging device according to claim 12 , wherein the oxide semiconductor layer comprises In and Zn.

19. An electronic appliance comprising the imaging device according to claim 12 .

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Sakakura Masayuki
• Kurokawa Yoshiyuki

Classifications

• H01L27/1207

  Electricity · mapped topic

• H01L29/7869

  Electricity · mapped topic

• H01L27/14643

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic

• H01L27/1464

  Electricity · mapped topic