Frequency tuning for pulsed radio frequency plasma processing

US9711331B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9711331-B2
Application numberUS-201715403021-A
CountryUS
Kind codeB2
Filing dateJan 10, 2017
Priority dateJun 30, 2014
Publication dateJul 18, 2017
Grant dateJul 18, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to maximize power delivery, a calibration phase using a dummy substrate or no substrate in the chamber, is used to ascertain a preferred fixed initial RF frequency for each pulse. This fixed initial RF frequency is then used at the start of each pulse during a processing phase, where a real substrate is used and processed in the chamber.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: providing pulsed RF power to a plasma load, where each pulse comprises RF power having a controllable frequency; tuning an initial RF frequency for each pulse in a string of pulses, in a calibration phase, by reducing a difference between a characteristic indicative of the pulsed RF power and a desired characteristic of the pulsed RF power, at a start of consecutive pulses, until the difference is below a threshold; then selecting the initial RF frequency as a fixed initial RF frequency for use in a processing phase using a substrate different than a substrate used during the calibration run; and tuning the RF frequency during the processing phase within each pulse but returning to the fixed initial RF frequency at a start of each pulse. 2. The method of claim 1 , wherein the characteristic indicative of the pulsed RF power is reflected power. 3. The method of claim 1 , wherein the characteristic indicative of the pulsed RF power is load impedance power. 4. The method of claim 1 , wherein the characteristic indicative of the pulsed RF power is a density of the plasma. 5. A non-transitory, tangible computer readable storage medium, encoded with processor readable instructions to perform a method for frequency tuning, the method comprising: in a calibration phase, tuning an initial RF frequency at a start of each pulse in a string of RF pulses, until a difference between a characteristic indicative of power and a desired characteristic of the power at the start of two consecutive pulses in the string, is below a threshold; then selecting the initial RF frequency as a fixed initial RF frequency to be used during a processing phase; and in the processing phase, setting an initial RF frequency for all pulses in the processing phase equal to the fixed initial RF frequency selected during the calibration phase; and tuning the RF frequency during each pulse, but returning to the fixed initial RF frequency at a start of each pulse. 6. The non-transitory, tangible computer readable storage medium of claim 5 , wherein the characteristic indicative of power is reflected power. 7. The non-transitory, tangible computer readable storage medium of claim 5 , wherein the characteristic indicative of power is load impedance power. 8. The non-transitory, tangible computer readable storage medium of claim 5 , wherein the characteristic indicative of power is a density of the plasma. 9. A power delivery system comprising: a power source configured to provide pulsed RF power to a plasma load; a sensor configured to sample a characteristic indicative of the pulsed RF power; a controller in communication with the sensor and the power source and executable to: in a calibration phase, tune an initial RF frequency at a start of each pulse in a string of RF pulses, until a difference between the characteristic indicative of the pulsed RF power and a desired characteristic of the power at the start of consecutive pulses in the string, is below a threshold; then select the initial RF frequency as a fixed initial RF frequency to be used during a processing phase; and in the processing phase, set an initial RF frequency for all pulses in the processing phase equal to the fixed initial RF frequency selected during the calibration phase; and tune the RF frequency of pulsed RF power during each pulse, but return to the fixed initial RF frequency at a start of each pulse. 10. The power delivery system of claim 9 , wherein the sensor is a reflected power sensor. 11. The power delivery system of claim 10 , wherein the sensor is a directional coupler. 12. The power delivery system of claim 9 , wherein the sensor is a delivered power sensor. 13. The power delivery system of claim 9 , wherein the sensor is an impedance sensor. 14. The power delivery system of claim 9 , wherein the sensor is a plasma density sensor. 15. The power delivery system of claim 9 , wherein the power source is in communication with a switching circuit that converts the RF power to the pulsed RF power. 16. The power delivery system of claim 9 , wherein the sensor is part of an oscilloscope. 17. The power delivery system of claim 9 , wherein the power source is configured to provide the pulsed RF power to a plasma load via a matching network.

Assignees

Inventors

Classifications

  • using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title

  • Monitoring and controlling tubes by information coming from the object and/or discharge · CPC title

  • Frequency modulation · CPC title

  • Feedback systems · CPC title

  • Amplitude modulation, includes pulsing · CPC title

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What does patent US9711331B2 cover?
This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to maximize power delivery, a calibration phase using a dummy substrate or no substrate in the chamber, is used to ascertain a preferred fixed initial RF frequency for each pulse. This fixed initial RF frequency is then used at the start of each …
Who is the assignee on this patent?
Advanced Energy Ind Inc
What technology area does this patent fall under?
Primary CPC classification H01J37/32155. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).