RF multi-feed structure to improve plasma uniformity

Patent metadata

Field	Value
Publication number	US-9711330-B2
Application number	US-201615150968-A
Country	US
Kind code	B2
Filing date	May 10, 2016
Priority date	Mar 17, 2014
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

A plasma source assembly for use with a processing chamber is described. The assembly includes a multi-feed RF power connection to a single or multiple RF hot electrodes.

First claim

What is claimed is:

1. A plasma source assembly comprising:
a housing having an inner edge, an outer edge and side walls, the housing including an electrically grounded front face, the inner edge and outer edge defining a length and the side walls defining a width, the electrically grounded front face including holes to allow a gas to pass therethrough;
an RF hot electrode within the housing spaced from the electrically grounded front face and defining a gap, the RF hot electrode including a plurality of holes to allow a gas to pass therethrough;
a first coaxial RF feed line including an outer conductor and an inner conductor separated by an insulator, the outer conductor in electrical communication with electrical ground and the inner conductor in electrical communication with the RF hot electrode, the first coaxial RF feed line connecting to the RF hot electrode at a first distance from the inner edge of the housing; and
a second coaxial RF feed line including an outer conductor and an inner conductor separated by an insulator, the outer conductor in electrical communication with electrical ground and the inner conductor in electrical communication with the RF hot electrode, the second coaxial RF feed line connecting to the RF hot electrode at a second distance from the inner edge of the housing, the second distance being greater than the first distance.

2. The plasma source assembly of claim 1 , wherein an RF feed line connected to a power source, the RF feed line splitting into the first coaxial RF feed line and the second coaxial RF feed line at a junction.

3. The plasma source assembly of claim 2 , wherein the junction is closer to one of the first coaxial RF feed line and the second coaxial RF feed line than the other of the first coaxial RF feed line and the second coaxial RF feed line so that the first coaxial RF feed line has a first length and the second coaxial RF feed line has a second length.

4. The plasma source assembly of claim 3 , wherein a ratio of the first length to the second length is in the range of about 10:1 to about 1:5.

5. The plasma source assembly of claim 2 , wherein the junction comprises a controller.

6. The plasma source assembly of claim 5 , wherein the controller modifies RF power from the RF feed line to generate a first RF power in the first coaxial RF feed line and a second RF power different from the first RF power in the second coaxial RF feed line.

7. The plasma source assembly of claim 5 , wherein the controller modifies RF phase to generate a first phase in the first coaxial RF feed line and a second phase different from the first phase in the second coaxial RF feed line.

8. The plasma source assembly of claim 2 , further comprising a third coaxial RF feed line including an outer conductor and an inner conductor separated by an insulator, the outer conductor in electrical communication with electrical ground and the inner conductor in electrical communication with the RF hot electrode, the third coaxial RF feed line connecting to the RF hot electrode at a third distance from the inner edge of the housing, the third distance being different than the first distance or the second distance.

9. The plasma source assembly of claim 8 , wherein the first coaxial RF feed line, the second coaxial RF feed line and the third coaxial RF feed line connect to the RF hot electrode at about a center of a width of the RF hot electrode.

10. The plasma source assembly of claim 8 , wherein the junction comprises a controller and each of the first coaxial RF feed line, the second coaxial RF feed line and the third coaxial RF feed line are connected to the controller.

11. The plasma source assembly of claim 10 , wherein the controller modifies RF power from the RF feed line to generate a first RF power in the first coaxial RF feed line and a second RF power different from the first RF power in the second coaxial RF feed line.

12. The plasma source assembly of claim 1 , further comprising a first power source connected to the first coaxial RF feed line and a second power source connected to the second coaxial RF feed line.

13. The plasma source assembly of claim 1 , wherein the RF hot electrode is separated into an inner region and an outer region, the inner region electrically isolated from the outer region by a dielectric material.

14. The plasma source assembly of claim 13 , wherein the dielectric material is selected from the group consisting of ceramic, aluminum oxide, aluminum nitride, plastic and combinations thereof.

15. The plasma source assembly of claim 1 , further comprising an end dielectric bounding the RF hot electrode at the inner edge, the outer edge and the side walls positioned between the RF hot electrode and the housing.

16. The plasma source assembly of claim 15 , wherein the end dielectric comprising a material selected from the group consisting of ceramic, aluminum oxide, aluminum nitride, plastic and combinations thereof.

17. The plasma source assembly of claim 1 , wherein the gap is in the range of about 2 mm to about 25 mm.

18. The plasma source assembly of claim 1 , wherein the first coaxial RF feed line and the second coaxial RF feed line are connected to electrical ground so that there is symmetric geometry of return current.

19. The plasma source assembly of claim 1 , wherein the plurality of holes in the RF hot electrode have a diameter less than about 2 mm.

20. The plasma source assembly of claim 1 , wherein the holes in the front face have a diameter less than about 7 mm.

Assignees

• Applied Materials Inc

Inventors

• Bera Kallol

Classifications

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title

• H01J37/32174

  Circuits specially adapted for controlling the RF discharge · CPC title

• H01J37/32541 Primary

  Shape · CPC title

• H01J37/32577

  Electrical connecting means · CPC title