Regulator and semiconductor integrated circuit

Patent metadata

Field	Value
Publication number	US-9710009-B2
Application number	US-201514847713-A
Country	US
Kind code	B2
Filing date	Sep 8, 2015
Priority date	Mar 13, 2015
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

According to one embodiment, a regulator is provided which comprises a reference voltage generating circuit that generates a reference voltage, a first voltage dividing circuit that divides a regulator output in voltage, an error amplifier that compares a first divided voltage obtained by dividing the regulator output and the reference voltage, and an output transistor that generates the regulator output based on the output of the error amplifier. The reference voltage generating circuit comprises a diode-connected first transistor. The reference voltage is generated based on a diode voltage generated by the first transistor.

First claim

What is claimed is:

1. A regulator comprising:
a reference voltage generating circuit that generates a reference voltage;
a first voltage dividing circuit that divides a regulator output in voltage;
an error amplifier that compares a first divided voltage obtained by dividing the regulator output and the reference voltage; and
an output transistor that generates the regulator output based on the output of the error amplifier,
wherein the reference voltage generating circuit comprises:
a constant current source that generates a constant current; and
a diode-connected first transistor having the constant current supplied thereto,

wherein the reference voltage is generated based on a diode voltage generated by the first transistor, the first transistor comprising:
a diode-connected P-channel transistor; and
a diode-connected N-channel transistor connected in series to the P-channel transistor, and

wherein the diode voltage of the first transistor is given by the sum of the diode voltage of the P-channel transistor and the diode voltage of the N-channel transistor.

2. The regulator according to claim 1 , wherein the first voltage dividing circuit comprises:
a first resistor; and
a second resistor connected in series to the first resistor, and
wherein the first divided voltage is outputted via the connection point of the first resistor and the second resistor.

3. The regulator according to claim 1 , comprising:
a second voltage dividing circuit that divides the diode voltage of the first transistor,
wherein the reference voltage is a second divided voltage obtained by dividing the diode voltage of the first transistor.

4. The regulator according to claim 3 , wherein the second voltage dividing circuit comprises:
a third resistor; and
a fourth resistor connected in series to the third resistor, and
wherein the second divided voltage is outputted via the connection point of the third resistor and the fourth resistor.

5. The regulator according to claim 1 , wherein the first transistor comprises:
M number (M is an integer of two or greater) of series circuits of a diode-connected P-channel transistor and a diode-connected N-channel transistor connected in series that are connected in parallel,
wherein the threshold voltages of the P-channel transistor and the N-channel transistor are set to be different for each of the series circuits, and
wherein the diode voltage of the first transistor is a voltage on a connection point of the parallel connection.

6. The regulator according to claim 5 , comprising a selector circuit that selects one or a number, no greater than M−1, of series circuits from the M number of series circuits.

7. The regulator according to claim 6 , wherein the selector circuit selects the series circuits according to thresholds of P-channel transistors and N-channel transistors of a load circuit to which the regulator output is supplied.

8. The regulator according to claim 1 , wherein the constant current source comprises:
a current source whose temperature characteristic is adjustable; and
a current mirror circuit that performs current mirror operation for a current generated by the current source to generate the constant current.

9. The regulator according to claim 8 , wherein the current source comprises a variable resistor that can be adjusted to reduce the temperature dependence of the constant current.

10. A semiconductor integrated circuit comprising:
a reference voltage generating circuit that generates a reference voltage;
a first voltage dividing circuit that divides a regulator output in voltage;
an error amplifier that compares a first divided voltage obtained by dividing the regulator output and the reference voltage;
an output transistor that generates the regulator output based on the output of the error amplifier; and
a load circuit to which the regulator output is supplied,
wherein the reference voltage generating circuit comprises:
a constant current source that generates a constant current; and
a diode-connected first transistor having the constant current supplied thereto,

wherein the reference voltage is generated based on a diode voltage generated by the first transistor, the first transistor comprising:
a diode-connected P-channel transistor; and
a diode-connected N-channel transistor connected in series to the P-channel transistor, and

wherein the diode voltage of the first transistor is given by the sum of the diode voltage of the P-channel transistor and the diode voltage of the N-channel transistor.

11. The semiconductor integrated circuit according to claim 10 , wherein the reference voltage generating circuit, the first voltage dividing circuit, the error amplifier, the output transistor, and the load circuit are formed on the same semiconductor chip.

12. The semiconductor integrated circuit according to claim 11 , wherein the first voltage dividing circuit comprises:
a first resistor; and
a second resistor connected in series to the first resistor, and
wherein the first divided voltage is outputted via the connection point of the first resistor and the second resistor.

13. The semiconductor integrated circuit according to claim 11 , comprising:
a second voltage dividing circuit that divides the diode voltage of the first transistor,
wherein the reference voltage is a second divided voltage obtained by dividing the diode voltage of the first transistor.

14. The semiconductor integrated circuit according to claim 13 , wherein the second voltage dividing circuit comprises:
a third resistor; and
a fourth resistor connected in series to the third resistor, and
wherein the second divided voltage is outputted via the connection point of the third resistor and the fourth resistor.

15. The semiconductor integrated circuit according to claim 11 , wherein the constant current source comprises:
a current source whose temperature characteristic is adjustable; and
a current mirror circuit that performs current mirror operation for a current generated by the current source to generate the constant current.

16. The semiconductor integrated circuit according to claim 15 , wherein the current source comprises a variable resistor that can be adjusted to reduce the temperature dependence of the constant current.

17. The semiconductor integrated circuit according to claim 10 , wherein the first transistor comprises:
M number (M is an integer of two or greater) of series circuits of a diode-connected P-channel transistor and a diode-connected N-channel transistor connected in series that are connected in parallel,
wherein the threshold voltages of the P-channel transistor and the N-channel transistor are set to be different for each of the series circuits, and
wherein the diode voltage of the first transistor is a voltage on a connection point of the parallel connection.

18. The semiconductor integrated circuit according to claim 10 , comprising a selector circuit that selects one or a number, no greater than M−1, of series circuits from the M number of series circuits.

Assignees

• Toshiba Kk

Inventors

• Ideno Hiroyuki
• Kushibe Hidefumi

Classifications

• G05F3/267 Primary

  using both bipolar and field-effect technology · CPC title