Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
Amplification method for photoresist exposure in semiconductor chip manufacturing
US9709898B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9709898-B2 |
| Application number | US-201414521963-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 23, 2014 |
| Priority date | Jan 7, 2013 |
| Publication date | Jul 18, 2017 |
| Grant date | Jul 18, 2017 |
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Abstract
Official abstract text for this publication.
An electrical field is applied through an extreme ultraviolet (EUV) photoresist layer along a direction perpendicular to an interface between the EUV photoresist layer and an underlying layer. Secondary electrons and thermal electrons are accelerated along the direction of the electrical field, and travel with directionality before interacting with the photoresist material for a chemical reaction. The directionality increases the efficiency of electron photoacid capture, reducing the required EUV dose for exposure. Furthermore, this directionality reduces lateral diffusion of the secondary and thermal electrons, and thereby reduces blurring of the image and improves the image resolution of feature edges formed in the EUV photoresist layer. The electrical field may be generated by applying a direct current (DC) and/or alternating current (AC) bias voltage across an electrostatic chuck and a conductive plate placed over the EUV photoresist layer with a hole for passing the EUV radiation through.
First claim
Opening claim text (preview).
What is claimed is: 1. An apparatus for lithographically exposing an extreme ultraviolet (EUV) photoresist layer, said apparatus comprising: an electrically conductive chuck configured to hold a substrate with an EUV photoresist layer thereupon and located in a vacuum enclosure; an EUV radiation source configured to emit an EUV radiation; a conductive plate with a hole therein and located over said electrically conductive chuck, wherein said hole is located in a beam path of s…
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Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
- G03F7/2004Primary
Physics · mapped topic
- G03F7/70325Primary
Physics · mapped topic
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- What does patent US9709898B2 cover?
- An electrical field is applied through an extreme ultraviolet (EUV) photoresist layer along a direction perpendicular to an interface between the EUV photoresist layer and an underlying layer. Secondary electrons and thermal electrons are accelerated along the direction of the electrical field, and travel with directionality before interacting with the photoresist material for a chemical reacti…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification G03F7/2004. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jul 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).