Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern
US-9034558-B2 · May 19, 2015 · US
Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
US9709891B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9709891-B2 |
| Application number | US-201514633729-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 27, 2015 |
| Priority date | Dec 9, 2005 |
| Publication date | Jul 18, 2017 |
| Grant date | Jul 18, 2017 |
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Abstract
Official abstract text for this publication.
A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent; and a pattern forming method using the positive resist composition.
First claim
Opening claim text (preview).
What is claimed is: 1. A positive resist composition, which comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent, wherein: the amount added of the resin (C) is 0.1 to 6.0 mass %, based on the entire solids content of the positive resist comp…
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Classifications
- G03F7/0395Primary
Physics · mapped topic
Physics · mapped topic
- G03F7/0397Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US9709891B2 cover?
- A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent; and a pattern forming method using the positive resist composition.
- Who is the assignee on this patent?
- Fujifilm Corp
- What technology area does this patent fall under?
- Primary CPC classification G03F7/0395. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jul 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).