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US-12146236-B2 · Nov 19, 2024 · US
Quality-evaluated vitreous silica crucible
US9708730B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9708730-B1 |
| Application number | US-201715488342-A |
| Country | US |
| Kind code | B1 |
| Filing date | Apr 14, 2017 |
| Priority date | Jun 30, 2013 |
| Publication date | Jul 18, 2017 |
| Grant date | Jul 18, 2017 |
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- Title
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Abstract
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A quality-evaluated vitreous silica crucible for pulling silicon single crystal is provided, wherein an inner surface of the vitreous silica crucible has regions where surface defects including brown rings are to be generated when pulling silicon single crystal. The regions are distinguished using an infrared absorption spectrum or a Raman shift of the regions, wherein a position of each region and/or a density of the regions are/is specified.
First claim
Opening claim text (preview).
What is claimed is: 1. A quality-evaluated vitreous silica crucible for pulling silicon single crystal, wherein an inner surface of the vitreous silica crucible has regions where surface defects including brown rings are to be generated when pulling silicon single crystal, said regions being distinguished using an infrared absorption spectrum or a Raman shift of the regions, wherein a position of each region and/or a density of the regions are/is specified. 2. The quality-evaluated vitreous silica crucible according to claim 1 , wherein the position of each region corresponds to a position having a peak in the infrared absorption spectrum corresponding to wavenumber 1080-1100 cm −1 and/or wavenumber 1150-1250 cm −1 . 3. The quality-evaluated vitreous silica crucible according to claim 1 , wherein the position of each region corresponds to a position having a peak in the Raman shift corresponding to Raman shift 500-550 cm −1 . 4. The quality-evaluated vitreous silica crucible according to claim 1 , which has a substantially cylindrical straight body portion having an opening on a top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and having a curvature larger than that of the bottom portion, wherein the density of the regions is specified in each of the body portion, the curved bottom portion, and the corner portion.
Assignees
Inventors
Classifications
Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) · CPC title
Raman scattering · CPC title
Silicon · CPC title
Crucibles or containers · CPC title
Heating of the melt or the crystallised materials · CPC title
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- What does patent US9708730B1 cover?
- A quality-evaluated vitreous silica crucible for pulling silicon single crystal is provided, wherein an inner surface of the vitreous silica crucible has regions where surface defects including brown rings are to be generated when pulling silicon single crystal. The regions are distinguished using an infrared absorption spectrum or a Raman shift of the regions, wherein a position of each region…
- Who is the assignee on this patent?
- Sumco Corp
- What technology area does this patent fall under?
- Primary CPC classification C30B15/10. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jul 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).