Adaptive fault clearing based on power transistor temperature

Patent metadata

Field	Value
Publication number	US-9705310-B2
Application number	US-201414518311-A
Country	US
Kind code	B2
Filing date	Oct 20, 2014
Priority date	Nov 26, 2013
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A system includes a current measurement unit, an overload timer, and a processing unit. The current measuring unit measures current through a power transistor, and the overload timer measures an overload time associated with the measured current. The processing unit receives a user-specified overload time setting or a user-specified overload amperage setting associated with a protection device connected in series with a load, receives a temperature measurement of a component associated with the power transistor or a measurement of overload time associated with the current, wherein the power transistor supplies the current to the load and the protection device, and selectively turns off the power transistor based on the measured temperature, the measured current through the power transistor, and the user-specified overload amperage setting or based on the measured temperature, the measured overload time, and the user-specified overload time.

First claim

What is claimed is:

1. A method, comprising:
receiving a user-specified overload time setting associated with a protection device connected in series with a load;
measuring a current through a power transistor or an overload time associated with the current, wherein the power transistor supplies the current to the load and the protection device;
measuring a temperature of a component associated with the power transistor;
determining, based on the measured temperature, the measured current through the power transistor, and the user-specified overload time setting, a maximum power transistor overload current; and
selectively turning off the power transistor when the measured current through the power transistor equals or exceeds the determined maximum power transistor overload current.

2. The method of claim 1 , wherein the user-specified overload time setting comprises customizable values set by a user.

3. The method of claim 1 , wherein the power transistor is a component of an inverter in an uninterruptible power supply (UPS).

4. The method of claim 1 , wherein the power transistor comprises an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a junction gate field effect transistor (JFET).

5. The method of claim 4 , wherein the component associated with the power transistor comprises a base plate of a module that includes the power transistor, wherein the base plate is coupled to a heat sink via a heat conducting material.

6. A method comprising:
receiving a user-specified overload amperage setting associated with a protection device connected in series with a load;
measuring a current through a power transistor or an overload time associated with the current, wherein the power transistor supplies the current to the load and the protection device;
measuring a temperature of a component associated with the power transistor;
determining, based on the measured temperature, the measured overload time, and the user-specified overload amperage setting, a maximum power transistor overload time; and
selectively turning off the power transistor when the measured overload time equals or exceeds the determined maximum power transistor overload time.

7. The method of claim 6 , wherein the user-specified overload amperage setting comprises customizable values set by a user.

8. The method of claim 6 , wherein the power transistor is a component of an inverter in an uninterruptible power supply (UPS).

9. The method of claim 6 , wherein the power transistor comprises an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a junction gate field effect transistor (JFET).

10. The method of claim 9 , wherein the component associated with the power transistor comprises a base plate of a module that includes the power transistor, wherein the base plate is coupled to a heat sink via a heat conducting material.

11. A system, comprising:
a current measuring unit configured to measure current through a power transistor;
an overload timer configured to measure an overload time associated with the measured current; and
a processing unit configured to:
receive a user-specified overload time setting associated with a protection device connected in series with a load, wherein the power transistor supplies the current to the load,
receive a temperature measurement of a component associated with the power transistor,
determine, based on the measured temperature, the measured current through the power transistor, and the user-specified overload time setting, a maximum power transistor overload current, and
selectively turn off the power transistor when the measured current through the power transistor equals or exceeds the determined maximum power transistor overload current.

12. The system of claim 11 , wherein the user-specified overload time setting comprises customizable values set by a user.

13. The system of claim 11 , wherein the system is an uninterruptible power supply (UPS) system and the power transistor is a component of an inverter in the UPS system.

14. The system of claim 11 , wherein the power transistor comprises an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a junction gate field effect transistor (JFET).

15. The system of claim 14 , wherein the component associated with the power transistor comprises a base plate of a module that includes the power transistor, wherein the base plate is coupled to a heat sink via a heat conducting material.

16. A system, comprising:
a current measuring unit configured to measure current through a power transistor;
an overload timer configured to measure an overload time associated with the measured current; and
a processing unit configured to:
receive a user-specified overload amperage setting associated with a protection device connected in series with a load, wherein the power transistor supplies the current to the load,
receive a temperature measurement of a component associated with the power transistor,
determine, based on the measured temperature, the measured overload time, and the user-specified overload amperage setting, a maximum power transistor overload time, and
selectively turn off the power transistor when the measured overload time equals or exceeds the determined maximum power transistor overload time.

17. The system of claim 16 , wherein the user-specified overload amperage comprises customizable values set by a user.

18. The system of claim 16 , wherein the system is an uninterruptible power supply (UPS) system and the power transistor is a component of an inverter in the UPS system.

19. The system of claim 16 , wherein the power transistor comprises an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a junction gate field effect transistor (JFET).

20. The system of claim 19 , wherein the component associated with the power transistor comprises a base plate of a module that includes the power transistor, wherein the base plate is coupled to a heat sink via a heat conducting material.

21. A non-transitory computer-readable medium containing instructions executable by at least one processor, the computer-readable medium comprising:
one or more instructions for receiving a user-specified overload time setting associated with a protection device connected in series with a load;
one or more instructions for receiving a measurement of current through a power transistor or for receiving a measurement of overload time associated with the current, wherein the power transistor supplies the current to the load and the protection device;
one or more instructions for receiving a measurement of temperature of a component associated with the power transistor;
one or more instructions for determining, based on the measured temperature, the measured current through the power transistor, and the user-specified overload time setting, a maximum power transistor overload current;
one or more instructions for selectively turning off the power transistor when the measured current through the power transistor equals or exceeds the determined maximum power transistor overload current.

22. The non-transitory computer-readable medium of claim 21 , wherein the user-specified overload time setting comprises customizable values set by a user.

23. The non-transitory computer-readable medi

Assignees

• Thomas & Betts Int Llc
• Thomas & Betts Int Llc

Inventors

• Pfitzer Hans-Erik
• Walraven Justin

Classifications

• H02H3/085

  making use of a thermal sensor, e.g. thermistor, heated by the excess current (also responsive to the temperature of the protected device H02H5/041, thermal images H02H6/00) · CPC title

• H02H3/006

  Calibration or setting of parameters · CPC title

• H03K17/0822

  in field-effect transistor switches · CPC title

• H03K17/0828

  in composite switches · CPC title

• H02H3/093

  with timing means {(in general H02H3/027; thermal delay H02H3/085; timing means for undervoltage protection H02H3/247)} · CPC title