Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same

Patent metadata

Field	Value
Publication number	US-9705285-B2
Application number	US-201414169520-A
Country	US
Kind code	B2
Filing date	Jan 31, 2014
Priority date	Jan 31, 2014
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same. The device includes an edge-emitting semiconductor laser, said laser having a multi-layered waveguide, and said waveguide comprising at least one layer with an active region that emits light under electrical injection, and at least one aperiodic layer stack.

First claim

What is claimed is:

1. A device comprising an edge-emitting semiconductor laser,
the laser having a multi-layered waveguide, the waveguide comprising at least one layer with an active region that emits light under electrical injection, at least one layer doped with p-type impurity at one side of the layer with the active region and multiple layers doped with n-type impurity, stacked between a substrate and the layer with the active region in a direction perpendicular to the light propagation forming an aperiodic multi-layered sequence, wherein
the waveguide
has the fundamental mode localized at the layer containing the active region and expanded to a whole area of the multi-layered sequence,
has higher order modes localized at the multi-layered sequence with leakage losses into the substrate larger than that of the fundamental mode, and
provides a single-mode output radiation with small divergence, and
the aperiodic multi-layered sequence includes
an aperiodic mode expansion sequence comprising a plurality of layer pairs, each layer pair having two layers of alternating refractive indices providing the expansion of the fundamental mode localized predominantly at the layer with the active region, the layers having a first refractive index and a second refractive index, the first refractive index being larger than the second refractive index, and
an aperiodic leakage controlling sequence comprising a plurality of layer pairs, each layer pair having two layers of alternating refractive indices providing the localization of the higher order modes predominantly at the aperiodic multi-layered sequence and high loss due to the leakage into the substrate, each of the layers having one of a third refractive index and a fourth refractive index, the third refractive index being larger than the fourth refractive index; and wherein
the first refractive index, the second refractive index, the third refractive index and the fourth refractive index are different, and
the third refractive index is larger than the first refractive index and the fourth refractive index is larger than the second refractive index.

2. The device of claim 1 , wherein
the aperiodic mode expansion sequence comprises five layer pairs, five layers of which have the first refractive index and the other five layers have the second refractive index, and
the aperiodic leakage controlling sequence comprises one of four and five layers having the third refractive index and five layers having the fourth refractive index.

3. The device of claim 1 , wherein
the multi-layered sequence has non-uniform doping by n-type impurity with increased concentration in the layers of localization of the higher order modes contiguous to the substrate.

4. The device of claim 1 , wherein
the edge-emitting semiconductor laser comprises heterostructures having one of III-V semiconductor material and II-VI semiconductor material, and
the heterostructures comprise one or multiple layers of one of quantum wells, quantum wires, and quantum dots as the active region.

5. The device of claim 1 , wherein
the waveguide guides higher order modes localized at the plurality of aperiodic layer pairs with a confinement factor at the active layer smaller than that of the fundamental mode and with leakage losses into the substrate larger than that of the fundamental mode.

Assignees

• Univ Berlin Tech

Inventors

• Kalosha Vladimir
• Bimberg Dieter

Classifications

• H01S2301/18

  Semiconductor lasers with special structural design for influencing the near- or far-field · CPC title

• H01S5/2031 Primary

  characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities · CPC title

• H01S2301/166

  Single transverse or lateral mode · CPC title

• H01S5/205

  Antiguided structures · CPC title

• H01S5/34313

  with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs · CPC title