Diffused channel semiconductor light sources

Patent metadata

Field	Value
Publication number	US-9705283-B1
Application number	US-201514717692-A
Country	US
Kind code	B1
Filing date	May 20, 2015
Priority date	May 20, 2014
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A semiconductor vertical resonant cavity light source includes an upper mirror and a lower mirror that define a vertical resonant cavity. A first active region is within the vertical resonant cavity for light generation between the upper mirror and lower mirror. The vertical resonant cavity includes an inner mode confinement region and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) is within the outer current blocking region of at least one of the upper mirror, lower mirror, and first active region. A conducting channel within the inner mode confinement region is framed by the DHCBR. The DHCBR forces current flow into the conducting channel during operation of the light source. A cavity length within the inner mode confinement region equals or exceeds the cavity length formed in the DHCBR.

First claim

The invention claimed is:

1. A semiconductor vertical resonant cavity light source (vertical light source), comprising:
an upper mirror and a lower mirror that define a vertical resonant cavity;
an active region within said vertical resonant cavity for light generation between said upper mirror and said lower mirror;
said vertical resonant cavity including an inner mode confinement region and an outer current blocking region;
a conducting channel within said inner mode confinement region that is framed by said current blocking region, wherein said current blocking region forces current flow into said conducting channel during operation of said vertical light source, and
at least one cavity spacer layer between said current blocking region and said active region;
wherein said conducting channel includes impurity doping that increases its electrical conductivity, and wherein said conducting channel extends into said cavity spacer layer, and
wherein said impurity doping of said conducting channel is at least one of different from and greater than an impurity doping in said cavity spacer layer between said current blocking region and said active region.

2. The vertical light source of claim 1 , wherein said impurity doping of said conducting channel comprises a selective p-type diffusion.

3. The vertical light source of claim 2 , wherein said cavity spacer layer comprises an upper cavity spacer doping layer.

4. The vertical light source of claim 1 , wherein said upper mirror comprises a p-type distributed Bragg reflector (DBR) and said lower mirror comprises an n-type DBR.

5. The vertical light source of claim 1 , further comprising a depleted heterojunction current blocking region (DHCBR) within said current blocking region of at least one of said upper mirror, said lower mirror, and said first active region;
wherein said conducting channel is framed by said DHCBR, and
wherein said DHCBR also forces said current flow into said conducting channel during operation of said vertical light source.

6. A semiconductor vertical resonant cavity light source (vertical light source), comprising:
an upper mirror and a lower mirror that define a vertical resonant cavity;
an active region within said vertical resonant cavity for light generation between said upper mirror and said lower mirror;
said vertical resonant cavity including an inner mode confinement region and an outer current blocking region;
a depleted heterojunction current blocking region (DHCBR) within said outer current blocking region of at least one of said upper mirror, said lower mirror, and said active region, and
a conducting channel that includes impurity doping that increases its electrical conductivity within said inner mode confinement region that is framed by said DHCBR, wherein said DHCBR forces current flow into said conducting channel during operation of said vertical light source,
one or more upper cavity spacer doping layers placed between said DHCBR and said active region.

7. The vertical light source of claim 6 , wherein said impurity doping comprises a selective p-type diffusion.

8. The vertical light source of claim 6 , wherein said conducting channel comprises said selective p-type diffusion that extends into said cavity spacer doping layer.

9. The vertical light source of claim 6 , wherein said upper mirror comprises a p-type distributed Bragg reflector (DBR) and said lower mirror comprises an n-type DBR.

10. The vertical light source of claim 9 , wherein at least one period of said p-type DBR or said n-type DBR includes a mesa in said conducting channel that is 5 Å to 300 Å in height.

11. The vertical light source of claim 6 , wherein a more lightly doped side of said DHCBR has a maximum p-type concentration of 1×10 17 cm −3 , and wherein said conducting channel has a minimum p-type concentration of at least 1×10 17 cm −3 .

12. The vertical light source of claim 6 , wherein a more lightly doped side of said DHCBR has a maximum p-type concentration of 1×10 16 cm <3 , and wherein said conducting channel has a minimum p-type concentration of at least 5×10 17 cm −3 .

13. A laser transmitter, comprising:
a housing having at least one semiconductor vertical resonant cavity light source (vertical light source) and electrical circuitry coupled to control said vertical light source therein for transmitting encoded laser data;
wherein said housing includes electronic circuitry for detecting a firing of blank or live ammunition;
wherein said housing includes at least one optical lens for transmitting a beam of said encoded laser data into free space;
wherein said vertical light source comprises:
an upper mirror and a lower mirror that define a vertical resonant cavity;
a first active region within said vertical resonant cavity for light generation between said upper mirror and said lower mirror;
said vertical resonant cavity including an inner mode confinement region and an outer current blocking region;
a depleted heterojunction current blocking region (DHCBR) within said outer current blocking region of at least one of said upper mirror, said lower mirror, and said first active region; and
a conducting channel within said inner mode confinement region that is framed by said DHCBR, wherein said DHCBR forces current flow into said conducting channel during operation of said vertical light source.

14. The laser transmitter of claim 13 , wherein said laser transmitter includes electronic circuitry for transmitting a wake-up pulse to a receiver and electronic circuitry for transmitting said encoded laser data to said receiver, wherein a transmission of said wake-up pulse occurs prior to a transmission of said encoded laser data.

15. The laser transmitter of claim 13 , wherein said vertical light source comprises at least one vertical-cavity surface-emitting laser (VCSEL).

16. The laser transmitter of claim 15 , wherein said at least one VCSEL comprises a VCSEL array including a plurality of said VCSELs.

17. The laser transmitter of claim 15 , wherein said VCSEL further comprises one or more upper cavity spacer doping layers placed between said DHCBR and said first active region.

18. A tactical engagement system including:
a laser transmitter, comprising:
a first housing having at least one semiconductor vertical resonant cavity light source (vertical light source) and electrical circuitry coupled to control said vertical light source therein for transmitting encoded laser data;
wherein said housing includes electronic circuitry for detecting a firing of blank or live ammunition;
wherein said housing includes at least one optical lens for transmitting a beam of said encoded laser data into free space;
wherein said vertical light source comprises:
an upper mirror and a lower mirror that define a vertical resonant cavity;
a first active region within said vertical resonant cavity for light generation between said upper mirror and said lower mirror;
said vertical resonant cavity including an inner mode confinement region and an outer current blocking region;
a depleted heterojunction current blocking region (DHCBR) within said outer current blocking region of at least one of said upper mirror, said lower mirror, and said first active region; and
a conducting channel within said inner mode confinement region that is framed by said DHCBR, wherein said DHCBR forces current flow into said conducting channel during operation of said vertical light source, and
a receiver in a second housing including at least one photodetector for generating electrical signals res

Assignees

• Univ Central Florida Res Found Inc
• Sdphotonics Llc

Inventors

• Deppe Dennis G
• Zhao Guowei

Classifications

• H01S5/423

  having a vertical cavity · CPC title

• H01S5/18397

  Plurality of active layers vertically stacked in a cavity for multi-wavelength emission · CPC title

• H01S5/183

  having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] · CPC title

• H01S5/187 Primary

  using Bragg reflection · CPC title

• H01S5/026

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title