Semiconductor device, method of manufacturing the same, in-millimeter-wave dielectric transmission device, method of manufacturing the same, and in-millimeter-wave dielectric transmission system

Patent metadata

Field	Value
Publication number	US-9705202-B2
Application number	US-201514609658-A
Country	US
Kind code	B2
Filing date	Jan 30, 2015
Priority date	Jan 7, 2009
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A millimeter-wave dielectric transmission device. The millimeter-wave dielectric transmission device includes a semiconductor chip provided on one interposer substrate and capable of millimeter-wave dielectric transmission, an antenna structure connected to the semiconductor chip, two semiconductor packages including a molded resin configured to cover the semiconductor chip and the antenna structure, and a dielectric transmission path provided between the two semiconductor packages to transmit a millimeter wave signal. The semiconductor packages are mounted such that the antenna structures thereof are arranged with the dielectric transmission path interposed therebetween.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor chip on a substrate and capable of millimeter-wave band communication;
a coupler structure connected to the semiconductor chip; and
a millimeter wave transmission member made of a dielectric material including a dielectric capable of millimeter wave signal transmission and matched with the coupler structure.

2. The semiconductor device according to claim 1 , wherein the millimeter wave transmission member includes:
an area-defining member with a through portion matched with the coupler structure; and
the dielectric material in the through portion of the area-defining member.

3. The semiconductor device according to claim 2 , wherein the coupler structure is on the semiconductor chip.

4. The semiconductor device according to claim 3 , wherein the coupler structure includes a patch antenna.

5. The semiconductor device according to claim 4 , wherein the semiconductor chip includes:
a first signal generation unit configured to perform signal processing for an input signal and generate a millimeter wave signal;
a bidirectional signal coupling unit configured to couple the semiconductor chip to the coupler structure, transmit the millimeter wave signal generated by the first signal generation unit to the millimeter wave transmission member, and receive the millimeter wave signal from the millimeter wave transmission member;
a second signal generation unit configured to perform signal processing for the millimeter wave signal received by the signal coupling unit and generate an output signal.

6. The semiconductor device according to claim 5 , wherein the first signal generation unit includes a first signal conversion section configured to convert a parallel input signal to a serial output signal, and
the second signal generation unit includes a second signal conversion section configured to convert a serial input signal to a parallel output signal.

7. The semiconductor device according to claim 2 , wherein the coupler structure is arranged in parallel to the semiconductor chip.

8. The semiconductor device of claim 1 , further comprising an insulating member on the semiconductor chip.

9. The semiconductor device of claim 1 , wherein the coupler structure and the semiconductor chip are provided on different substrate surfaces.

Assignees

• Sony Corp

Inventors

• Kawamura Hirofumi
• Okada Yasuhiro

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/732

  between stacked chips · CPC title

• H10W90/722

  between stacked chips · CPC title