Cobalt (Co) and platinum (Pt)-based multilayer thin film having inverted structure and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9705075-B2
Application number	US-201214403058-A
Country	US
Kind code	B2
Filing date	Jun 26, 2012
Priority date	May 22, 2012
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers. Also, the multilayer thin film has excellent thermal stability, and thus maintains its PMA energy density even after being subjected to a heat treatment process. In addition, it enables a fine amount of in-plane magnetic anisotropy to be formed by heat treatment so as to reduce the critical current density required for magnetization switching. Therefore, it may be advantageously used for high-performance and high-density MRAM.

First claim

The invention claimed is:

1. A cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), comprising:
thin cobalt layers and thin platinum layers alternately deposited over a substrate,
wherein the cobalt and platinum-based multilayer thin film has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers,
wherein a ratio of the thickness of the thin cobalt layers to that of the thin platinum layers in the cobalt and platinum-based multilayer thin film is more than 1:1 but less than 3:1, and
wherein the cobalt and platinum-based multilayer thin film has a PMA energy density of 1-8×10 6 erg/cc at 300-450 Celsius degrees.

2. The cobalt and platinum-based multilayer thin film of claim 1 , wherein the thickness of each of the thin platinum layers in the cobalt and platinum-based multilayer thin film ranges from 0.15 nm to 0.25 nm.

3. The cobalt and platinum-based multilayer thin film of claim 1 , wherein the thin cobalt layer and the thin platinum layer in the cobalt and platinum-based multilayer thin film are deposited once or are alternately deposited 2-10 times.

4. The cobalt and platinum-based multilayer thin film of claim 1 , wherein the substrate is one selected from the group consisting of a silicon substrate, a glass substrate, a sapphire substrate and a magnesium oxide substrate.

5. The cobalt and platinum-based multilayer thin film of claim 1 , wherein a buffer layer and a seed layer are deposited between the substrate and the alternately deposited thin cobalt layer and thin platinum layer, and a protective layer is deposited on the alternately deposited thin cobalt layer and thin platinum layer.

6. The cobalt and platinum-based multilayer thin film of claim 5 , wherein the buffer layer, the seed layer or the protective layer is made of Au, Cu, Pd, Pt, Ta, Ru, or an alloy of two or more thereof.

7. The cobalt and platinum-based multilayer thin film of claim 1 , wherein a critical current value required for a perpendicular magnetization switching is reduced by forming in-plane magnetic anisotropy after heat treatment of the cobalt and platinum-based multilayer thin film.

8. A magnetic tunnel junction (MTJ) comprising:
a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA),
wherein the cobalt and platinum-based multilayer thin film comprises: thin cobalt layers and thin platinum layers alternately deposited over a substrate,
wherein the cobalt and platinum-based multilayer thin film has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers,
wherein a ratio of the thickness of the thin cobalt layers to that of the thin platinum layers in the cobalt and platinum-based multilayer thin film is more than 1:1 but less than 3:1, and
wherein the cobalt and platinum-based multilayer thin film has a PMA energy density of 1-8×10 6 erg/cc at 300-450 Celsius degrees.

9. The MTJ of claim 8 , wherein the cobalt and platinum-based multilayer thin film is applied as a free layer or a fixed layer in the MTJ by controlling a PMA energy density depending on a thickness ratio of the thin platinum layers and the thin cobalt layers.

10. A cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), comprising:
thin cobalt layers and thin platinum layers alternately deposited over a substrate,
wherein the cobalt and platinum-based multilayer thin film has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers,
wherein a ratio of the thickness of the thin cobalt layers to that of the thin platinum layers in the cobalt and platinum-based multilayer thin film is more than 1:1 but less than 3:1,
wherein the cobalt and platinum-based multilayer thin film has a PMA energy density of 1-8×10 6 erg/cc at 300-450 Celsius degrees.

11. The cobalt and platinum-based multilayer thin film of claim 10 , wherein the thickness of each of the thin platinum layers in the cobalt and platinum-based multilayer thin film ranges from 0.15 nm to 0.25 nm.

12. The cobalt and platinum-based multilayer thin film of claim 10 , wherein the thin cobalt layer and the thin platinum layer in the cobalt and platinum-based multilayer thin film are deposited once or are alternately deposited 2-10 times.

13. The cobalt and platinum-based multilayer thin film of claim 10 , wherein the substrate is one selected from the group consisting of a silicon substrate, a glass substrate, a sapphire substrate and a magnesium oxide substrate.

14. The cobalt and platinum-based multilayer thin film of claim 10 , wherein a buffer layer and a seed layer are deposited between the substrate and the alternately deposited thin cobalt layer and thin platinum layer, and a protective layer is deposited on the alternately deposited thin cobalt layer and thin platinum layer.

15. The cobalt and platinum-based multilayer thin film of claim 1 ,
wherein the cobalt and platinum-based multilayer thin film has a saturation magnetization (Ms) of 600-1050 emu/cc.

Assignees

• Lim Sang Ho
• Lee Tae Young
• Lee Seong Rae
• Son Dong-Su
• Sk Hynix Inc

Inventors

• Lim Sang Ho
• Lee Tae Young
• Lee Seong Rae
• Son Dong-Su

Classifications

• H01L43/02

  Electricity · mapped topic

• H01F10/123

  having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films · CPC title

• H01L43/10 Primary

  Electricity · mapped topic

• G01R33/098 Primary

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title