Sacrificial shorting straps for superconducting qubits

Patent metadata

Field	Value
Publication number	US-9705063-B2
Application number	US-201514749157-A
Country	US
Kind code	B2
Filing date	Jun 24, 2015
Priority date	May 18, 2015
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate. The first and second electrode paddles oppose one another. A sacrificial shorting strap is formed on the substrate. The sacrificial shorting strap connects the first electrode paddle and the second electrode paddle; The tunnel junction is formed connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap. The substrate is mounted on a portion of a quantum cavity. The portion of the quantum cavity is placed in a vacuum chamber. The sacrificial shorting strap is etched away in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first and second electrode paddles. The tunnel junction has been protected from electrostatic discharge by the sacrificial shorting strap.

First claim

What is claimed is:

1. A method of forming a protected tunnel junction, the method comprising:
forming a first electrode paddle and a second electrode paddle on a substrate, the first electrode paddle and the second electrode paddle opposing one another;
forming a sacrificial shorting strap on the substrate, the sacrificial shorting strap connecting the first electrode paddle and the second electrode paddle;
forming the tunnel junction connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap;
mounting the substrate on a portion of a quantum cavity;
placing the portion of the quantum cavity in a vacuum chamber;
etching away the sacrificial shorting strap in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first electrode paddle and the second electrode paddle;
placing the quantum cavity in a cooling chamber for operation, the tunnel junction having been protected from electrostatic discharge by the sacrificial shorting strap; and
wherein, when the substrate is mounted on the quantum cavity in the vacuum chamber, an etchant is utilized to etch away the sacrificial shorting strap without removing the tunnel junction, the first electrode paddle, and the second electrode paddle.

2. The method of claim 1 , wherein the etchant is a wet etchant that does not attack the tunnel junction, the first electrode paddle, and the second electrode paddle.

3. The method of claim 1 , wherein the etchant is a dry etchant that does not attack the tunnel junction, the first electrode paddle, and the second electrode paddle.

4. The method of claim 3 , wherein the dry etchant is XeF 2 .

5. The method of claim 1 , wherein, when the substrate is mounted on the quantum cavity in the vacuum chamber, an etchant is utilized to etch away the sacrificial shorting strap, without requiring the sacrificial shorting strap to be cut in order sever the sacrificial shorting strap.

6. The method of claim 1 , wherein, when the substrate is mounted on the quantum cavity in the vacuum chamber, an etchant is utilized to etch away the sacrificial shorting strap, without leaving the sacrificial shorting strap severed into a first part and a second part opposing each other.

7. The method of claim 1 , wherein the tunnel junction is a Josephson junction.

8. The method of claim 1 , wherein the tunnel junction comprises a first superconducting electrode and a second superconducting electrode, the first superconducting electrode and the second superconducting electrode sandwiching an insulator layer.

9. The method of claim 8 , wherein the sacrificial shorting strap prevents the insulator layer in the tunnel junction from receiving the electrostatic discharge, thus protecting the insulator layer from becoming defective.

10. The method of claim 1 , wherein, before etching away the sacrificial shorting strap in the vacuum chamber, one end of the sacrificial shorting strap connects at a first location on the first electrode paddle and another end of the sacrificial shorting strap connects at a second location on the second electrode paddle.

11. The method of claim 10 , wherein, after etching away the sacrificial shorting strap in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, the first electrode paddle has a first raised portion at the first location and the second electrode paddle has a second raised portion at the second location.

12. The method of claim 11 , wherein the first raised portion and the second raised portion are material of the first electrode paddle and the second electrode paddle;
wherein the first raised portion of the material has a higher height at the first location than other areas of the material of the first electrode paddle;
wherein the second raised portion of the material has a higher height at the second location than other areas of the material of the second electrode paddle.

13. The method of claim 12 , wherein the one end and the another end of the sacrificial shorting strap covered the first location and the second location during formation of the tunnel junction, thus keeping the material at the first location and the second location from wearing away resulting in the first raised portion and the second raised portion.

14. The method of claim 10 , wherein the first location includes a residual portion of the sacrificial shorting strap;
wherein the second location includes another residual portion of the sacrificial shorting strap;
wherein the residual portion and the another residual portion of the sacrificial shorting strap do not overhang from the first and second electrode paddles, respectively.

15. The method of claim 1 , wherein the quantum cavity is a three-dimensional cavity for operating the tunnel junction within the cooling chamber.

Assignees

• IBM

Inventors

• Chang Josephine B
• Mcclure Iii Douglas T

Classifications

• H10P50/242 Primary

  of Group IV materials · CPC title

• H01L39/2493

  Electricity · mapped topic

• H01L39/223 Primary

  Electricity · mapped topic

• H01L39/025

  Electricity · mapped topic

• H10D48/383

  Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects · CPC title