Method for producing a laser diode, mount and laser diode

Patent metadata

Field	Value
Publication number	US-9705057-B2
Application number	US-201314424688-A
Country	US
Kind code	B2
Filing date	Aug 27, 2013
Priority date	Aug 28, 2012
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

First claim

The invention claimed is:

1. A method for producing a laser diode, the method comprising:
forming a plurality of laser diodes on a wafer;
separating the wafer into wafer pieces, each wafer piece comprising a plurality of laser diodes arranged side by side;
inserting one wafer piece into a first mount, the first mount comprising a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece;
depositing a mirror layer only on an unshadowed upper area of the front face of the wafer piece;
inserting the wafer piece into a second mount, the second mount comprising a second covering element, the second covering element shadowing the mirror layer of the upper area of the front face;
depositing an electrically conductive contact layer on an unshadowed bottom area of the front face of the wafer piece; and
separating the wafer piece into individual laser diodes.

2. The method according to claim 1 , wherein the covering elements of the first and second mount overlap the front face of the wafer piece in a straight-lined manner, the mirror layer and the electrically conductive contact layer being deposited by a directed depositing process.

3. The method according to claim 2 , wherein the mirror layer and the electrically conductive contact layer are deposited using vapor deposition.

4. The method according to claim 1 , wherein a plurality of wafer pieces is inserted into the first mount and the upper areas of the front faces of the wafer pieces are simultaneously provided with a mirror layer.

5. The method according to claim 1 , wherein a plurality of wafer pieces is inserted into the second mount and the bottom areas of the front faces of the wafer pieces are simultaneously provided with the electrically conductive contact layers.

6. The method according to claim 1 , further comprising thinning the wafer from a bottom face prior to separating the wafer into the wafer pieces.

7. The method according to claim 6 , wherein the wafer is thinned to a thickness of more than 100 μm and less than 500 μm.

8. The method according to claim 1 , further comprising forming a mirror layer over a back face of the wafer piece while the wafer piece is held in the first mount or in the second mount, the back face opposite the front face.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Enzmann Roland
• Haneder Stephan
• Swietlik Tomasz
• Walter Christoph
• Rozynski Andreas
• Graul Markus
• Auen Karsten
• Dachs Jürgen

Classifications

• H01L2933/0058

  Electricity · mapped topic

• H01L33/005

  Electricity · mapped topic

• H01S5/02268

  Electricity · mapped topic

• H01L33/62

  Electricity · mapped topic

• H01S5/02252

  Electricity · mapped topic