Light-emitting diode, method for manufacturing light-emitting diode, light-emitting diode lamp and illumination device

Patent metadata

Field	Value
Publication number	US-9705034-B2
Application number	US-201214353239-A
Country	US
Kind code	B2
Filing date	Oct 2, 2012
Priority date	Oct 25, 2011
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A light-emitting diode, a method of manufacturing the same, a lamp and an illumination device. A light-emitting diode ( 100 ) is provided with a compound semiconductor layer ( 10 ) including a light-emitting layer ( 24 ) provided on a substrate ( 1 ); an ohmic contact electrode ( 7 ) provided between the substrate and compound semiconductor layer; an ohmic electrode ( 11 ) provided on the side of the compound semiconductor layer opposite the substrate; a surface electrode ( 12 ) including a branch section ( 12 b ) provided so as to cover the surface of the ohmic electrode and a pad section ( 12 a ) coupled to the branch section; and a current-blocking portion ( 13 ) provided between an under-pad light-emitting layer ( 24 a ) arranged in an area of the light-emitting layer that overlaps the pad section ( 12 a ) and a light-emitting layer arranged in an area except the area that overlaps the pad section, to prevent current from being supplied to the under-pad light-emitting layer.

First claim

The invention claimed is:

1. A light-emitting diode comprising
a compound semiconductor layer provided on a substrate and comprising a light-emitting layer and an etching stop layer in this order;
an ohmic contact electrode provided between the substrate and the compound semiconductor layer;
an ohmic electrode provided on an opposite side of the compound semiconductor layer with respect to the substrate;
a surface electrode comprising a branch section provided so as to cover a surface of the ohmic electrode and a pad section coupled to the branch section; and
a current-blocking portion provided between an under-pad light-emitting layer arranged in an area of the light-emitting layer that overlaps the pad section in a planar view and a light-emitting layer arranged in an area except an area that overlaps the pad section in a planar view, to prevent a current being supplied to the under-pad light-emitting layer,
wherein the current-blocking portion has an annular shape in a planar view so as to surround the under-pad light-emitting layer, and
an end face of the current-blocking portion in the thickness direction of the light-emitting diode furthest from the substrate is provided to contact with the etch stop layer.

2. The light-emitting diode according to claim 1 , wherein said current-blocking portion is a void.

3. The light-emitting diode of claim 1 , wherein said current-blocking portion is formed by embedding an insulating material.

4. The light-emitting diode of claim 1 , wherein said current-blocking portion comprises a reflection layer and a translucent insulating material layer arranged between the reflection layer and the compound semiconductor layer.

5. The light-emitting diode according to claim 1 , wherein the substrate is any one of a Ge substrate, GaP substrate, or GaAs substrate or a metal substrate.

6. The light-emitting diode of claim 1 , wherein the pad section has a circular shape in a planar view.

7. The light-emitting diode of claim 1 , wherein the light emitting layer is consisted of any one of AlGaAs, InGaAs, or AlGaInP.

8. The light-emitting diode of claim 1 , wherein the ohmic contact electrode is formed in an area which does not overlap the pad section in a planar view.

9. A light-emitting diode lamp comprising the light-emitting diode according to claim 1 .

10. An illumination device in which multiple light-emitting diodes according to claim 1 are mounted.

11. A method of manufacturing the light-emitting diode according to claim 1 , the light-emitting diode comprising the surface electrode having the pad section, which method comprises the steps of in this order:
forming the compound semiconductor layer comprising the etching stop layer and the light-emitting layer on a growth substrate in this order;
forming the current-blocking portion consisting of a recess penetrating the light emitting layer in a periphery of the pad section of the compound semiconductor layer in a planar view by using a dry etching method and a wet etching method in this order;
forming the ohmic contact electrode on the compound semiconductor layer;
bonding the substrate to the compound semiconductor layer on a side of the ohmic contact electrode, and then removing the growth substrate;
forming the ohmic electrode on an opposite side of the compound semiconductor layer with respect to the substrate; and
forming the surface electrode by forming the branch section so as to cover the surface of the ohmic electrode and the pad section coupled to the branch section.

12. The method of manufacturing a light-emitting diode according to claim 11 , wherein said current-blocking portion is formed by embedding an insulating material in the recess.

13. The method of manufacturing a light-emitting diode according to claim 12 ,
wherein the step of forming the ohmic contact electrode comprises a step of forming a translucent layer on the compound semiconductor layer so as to form the ohmic contact electrode penetrating the translucent layer; and
the step of embedding the insulating material is performed by embedding the translucent layer in the recess in the step of forming the translucent layer.

14. The method of manufacturing a light-emitting diode according to claim 11 ,
wherein the current-blocking portion is formed by depositing a translucent insulating material on an inner wall and a bottom face of the recess, and then embedding a metal material via the translucent insulating material in the recess.

15. The method of manufacturing a light-emitting diode according to claim 14 ,
wherein the step of forming the ohmic contact electrode comprises a step of forming a translucent layer on the compound semiconductor layer so as to form the ohmic contact electrode penetrating the translucent layer;
the method further comprises a step of forming a reflection layer on the translucent layer before the step of removing the growth substrate; and
the step of depositing the translucent insulating material is performed in the step of forming the translucent layer, and the step of embedding the metal material is performed in the step of forming the reflection layer.

16. A light-emitting diode, comprising
a compound semiconductor layer provided on a substrate and comprising a light-emitting layer and an etching stop layer in this order;
an ohmic contact electrode provided between the substrate and the compound semiconductor layer;
an ohmic electrode provided on an opposite side of the compound semiconductor layer with respect to the substrate; and
a surface electrode comprising a branch section provided so as to cover a surface of the ohmic electrode and a pad section coupled to the branch section,
wherein said light-emitting layer is formed only in the area which does not overlap the pad section in a planar view,
wherein the light-emitting layer is arranged so as to surround a current-blocking portion arranged in an area that overlaps the pad section in a planar view,
said current-blocking portion comprises an embedding layer, a reflection layer and a translucent insulating material layer wherein the two layers of the reflection layer and the translucent insulating material layer are arranged between the embedding layer and the compound semiconductor layer, and
a material of the embedding layer of the current-blocking portion is SiO 2 , Si 3 N 4 , TiO 2 or TiN.

17. A method of manufacturing the light-emitting diode according to claim 16 , said light-emitting diode comprising the surface electrode having the pad section, which method comprises steps of in this order:
forming the compound semiconductor layer comprising the etching stop layer and the light-emitting layer on a growth substrate in this order;
forming the current-blocking portion consisting of a recess penetrating the light emitting layer immediately below the pad section of the compound semiconductor layer in a planar view by using a dry etching method and a wet etching method in this order;
forming the ohmic contact electrode on the compound semiconductor layer;
bonding the substrate to the compound semiconductor layer on a side of the ohmic contact electrode, and then removing the growth substrate;
forming the ohmic electrode on an opposite side of the compound semiconductor layer with respect to the substrate; and
forming the surface electrode by forming the branch section so as to cover the surface of the ohmic electrode and the pad section coupled to the branch section.

18. The method of manufacturing a light-emitting diode according to claim 17 , wherein the current-blocking

Assignees

• Showa Denko Kk

Inventors

• Matsumura Atsushi
• TOKUNAGA Yuu

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3418

  Phosphides · CPC title

• H10P14/3221

  Arsenides · CPC title