Method of passivating an iron disulfide surface via encapsulation in zinc sulfide

Patent metadata

Field	Value
Publication number	US-9705012-B2
Application number	US-201514661165-A
Country	US
Kind code	B2
Filing date	Mar 18, 2015
Priority date	Mar 18, 2014
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A method for passivating the surface of crystalline iron disulfide (FeS 2 ) by encapsulating it in crystalline zinc sulfide (ZnS). Also disclosed is the related product comprising FeS 2 encapsulated by ZnS in which the sulfur atoms at the FeS 2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS 2 encapsulated by ZnS.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A method for passivating a surface of crystalline iron disulfide, comprising:
sputtering iron disulfide to form a layer of crystalline iron disulfide on a substrate, wherein the layer has a surface comprising crystal surfaces; and
depositing a capping layer of epitaxial zinc sulfide onto the surface of the crystalline iron disulfide layer under vacuum, wherein the crystal surfaces of the crystalline iron disulfide are encapsulated by the epitaxial zinc sulfide capping layer;
wherein the epitaxial zinc sulfide capping layer passivates sulfur atoms present on the crystal surfaces on the surface of the crystalline iron disulfide layer, thereby reducing surface defects as compared to a crystalline iron disulfide layer not capped with a zinc sulfide capping layer.

2. The method of claim 1 , wherein the substrate is a rigid material.

3. The method of claim 1 , wherein the substrate is a flexible material.

4. The method of claim 1 , wherein the crystalline iron disulfide comprises crystallites ranging in size from 1 nm to 10 μm.

5. The method of claim 1 , wherein the surface defects in the crystalline iron disulfide layer are assessed by comparing an X-ray photoelectron spectroscopy scan of S 2p doublets associated with surface defects with an X-ray photoelectric spectroscopy scan of S 2p doublets associated with the bulk state.

6. The method of claim 1 , wherein the crystal surfaces on the surface of the layer of crystalline iron disulfide and the capping layer of epitaxial zinc sulfide form a lattice match.

7. The method of claim 1 , wherein the capping layer of epitaxial zinc sulfide has a lattice constant of about 5.411 Å.

8. The method of claim 1 , wherein the crystal surfaces on the surface of layer of crystalline iron disulfide have a lattice constant of about 5.417 Å.

9. The method of claim 1 , wherein the capping layer of epitaxial zinc sulfide is deposited by physical vapor deposition.

10. The method of claim 1 , wherein the capping layer of epitaxial zinc sulfide is deposited by chemical vapor deposition.

11. The method of claim 10 , wherein the chemical vapor deposition is atomic layer deposition.

12. The method of claim 1 , wherein the layer of crystalline iron disulfide is deposited by physical vapor deposition.

13. The method of claim 1 , wherein the layer of crystalline iron disulfide is is deposited by chemical vapor deposition.

14. The method of claim 13 , wherein the chemical vapor deposition is atomic layer deposition.

Assignees

• Frantz Jesse A
• Myers Jason D
• Baker Colin C
• Sanghera Jasbinder S
• Erwin Steven C
• Us Navy

Inventors

• Frantz Jesse A
• Myers Jason D
• Baker Colin C
• Sanghera Jasbinder S
• Erwin Steven C

Classifications

• H01L31/02167 Primary

  Electricity · mapped topic

• H01L31/0384

  Electricity · mapped topic

• H01L31/032

  Electricity · mapped topic

• C23C14/0623

  Sulfides, selenides or tellurides · CPC title

• H01L31/0368

  Electricity · mapped topic