Thin film transistor and method for manufacturing same
US-9224871-B2 · Dec 29, 2015 · US
US9704997B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9704997-B2 |
| Application number | US-201514943018-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 16, 2015 |
| Priority date | Jul 15, 2013 |
| Publication date | Jul 11, 2017 |
| Grant date | Jul 11, 2017 |
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The present polymeric materials can be patterned with relatively low photo-exposure energies and are thermally stable, mechanically robust, resist water penetration, and show good adhesion to metal oxides, metals, metal alloys, as well as organic materials. In addition, these polymeric materials can be solution-processed (e.g., by spin-coating), and can exhibit good chemical (e.g., solvent and etchant) resistance in the cured form.
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The invention claimed is: 1. A method of fabricating an electronic device comprising a semiconductor layer, the method comprising: forming an organic layer in contact with the semiconductor layer, wherein the organic layer is formed by depositing a thin film from a composition comprising a polymer having the formula: wherein: U and U′, at each occurrence, independentl…
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