Organic light emitting diode display and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9704936-B2
Application number	US-201514879591-A
Country	US
Kind code	B2
Filing date	Oct 9, 2015
Priority date	Feb 9, 2015
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

An organic light emitting diode (OLED) display device including: a substrate; first, second and third thin film transistors sequentially laminated over the substrate; a pixel definition layer formed over the substrate and defining a pixel area; and first, second and third organic light emitting diode elements formed over the substrate, sequentially laminated in the pixel area, and respectively connected to the first, second and third thin film transistors.

First claim

What is claimed is:

1. An organic light emitting diode (OLED) display device comprising:
a substrate;
first, second and third thin film transistors sequentially laminated over the substrate;
a pixel definition layer formed over the substrate and defining a pixel area; and
first, second and third organic light emitting diode elements formed over the substrate, sequentially laminated in the pixel area, and respectively connected to the first, second and third thin film transistors, wherein the first, second and third organic light emitting diode elements overlap in the depth dimension of the OLED display device.

2. The device of claim 1 , wherein each of the first, second and third organic light emitting diode elements comprises:
a first electrode formed over the substrate;
a light emission layer formed over the first electrode; and
a second electrode formed over the light emission layer, wherein the light emission layer is disposed between the first and second electrodes.

3. The device of claim 2 , wherein the first, second and third thin film transistors are electrically connected to the first electrodes of the first, second and third organic light emitting diode elements, respectively.

4. The device of claim 2 , wherein the first electrode, the light emission layer and the second electrode overlap in the depth dimension of the OLED display device.

5. The device of claim 2 , wherein the first electrode, the light emission layer and the second electrode overlap in a direction parallel to the depth dimension of the OLED display device.

6. The device of claim 2 , wherein the light emission layer comprises a hole-injection layer, a hole-transporting layer, an organic layer configured to emit light, an electron-transporting layer, and an electron-injection layer are sequentially laminated.

7. The device of claim 1 , wherein the device comprises an array of pixels formed over the substrate, each of the pixels comprising the first, second and third organic light emitting diode elements.

8. The device of claim 1 , wherein the first, second and third organic light emitting diode elements are configured to emit red colored light, green colored light and blue colored light, respectively.

9. The device of claim 1 , wherein each of the first, second and third thin film transistors comprises an active semiconductor layer, a gate electrode and an insulation layer disposed between the active semiconductor layer and the gate electrode, and wherein the active semiconductor layer and the gate electrode overlap in the depth dimension of the OLED display device.

10. The device of claim 1 , wherein the first, second and third thin film transistors overlap in the depth dimension of the OLED display device.

11. An organic light emitting diode (OLED) display device comprising:
a substrate;
first, second and third thin film transistors sequentially laminated over the substrate;
a pixel definition layer formed over the substrate and defining a pixel area; and
first, second and third organic light emitting diode elements formed over the substrate, sequentially laminated in the pixel area, and respectively connected to the first, second and third thin film transistors; and
a first insulating layer formed between the first and second organic light emitting diode elements, and a second insulating layer formed between the second and third organic light emitting diode elements.

12. A method of making an OLED display, the method comprising:
providing a substrate;
forming first, second and third thin film transistors sequentially disposed over the substrate;
forming a pixel definition layer over the substrate to define a pixel area;
forming a first organic light emitting diode element in the pixel area over the substrate;
forming a first insulating layer over the first organic light emitting diode element;
forming a second organic light emitting diode element over the first insulating layer;
forming a second insulating layer over the second organic light emitting diode element; and
forming a third organic light emitting diode element over the second insulating layer.

13. The method of claim 12 , wherein the first, second and third organic light emitting diode elements are connected to first, second and third thin film transistors, respectively.

14. The method of claim 12 , wherein each of the first, second and third organic light emitting diode elements comprises:
a first electrode formed over the substrate;
a light emission layer formed over the pixel electrode; and
a second electrode formed over the light emission layer, wherein the light emission layer is disposed between the first and second electrodes.

15. The method of claim 14 , wherein the first, second and third thin film transistors are electrically connected to the first electrodes of the first, second and third organic light emitting diode elements, respectively.

16. The method of claim 14 , wherein the first electrode, the light emission layer and the second electrode overlap in the depth dimension of the OLED display.

17. The method of claim 14 , wherein the first electrode, the light emission layer and the second electrode overlap in a direction parallel to the depth dimension of the OLED display.

18. The method of claim 14 , wherein the first, second and third organic light emitting diode elements overlap in the depth dimension of the OLED display, wherein the device comprises an array of pixels over the substrate, each of the pixels comprising the first, second and third organic light emitting diode elements.

19. The method of claim 14 , wherein the second electrodes of the first, second and third organic light emitting diode elements are electrically connected to one another to form a common electrode.

20. The method of claim 14 , wherein the light emission layer comprises a hole-injection layer, a hole-transporting layer, an organic emission layer, an electron-transporting layer, and an electron-injection layer that are sequentially stacked.

21. The method of claim 12 , wherein each of the first, second and third thin film transistors comprises an active semiconductor layer, a gate electrode and an insulation layer disposed between the active semiconductor layer and the gate electrode, wherein the active semiconductor layer and the gate electrode overlap in the depth dimension of the OLED display.

Assignees

• Samsung Display Co Ltd

Inventors

• Chae Seung-Yeon
• Choi Sang Gun
• Cha Tae Woon

Classifications

• H01L27/3248

  Electricity · mapped topic

• H01L27/3218

  Electricity · mapped topic

• H01L27/3262 Primary

  Electricity · mapped topic

• H10K59/353 Primary

  characterised by the geometrical arrangement of the RGB subpixels · CPC title

• H10K59/123

  Connection of the pixel electrodes to the thin film transistors [TFT] · CPC title