Wiring film and active matrix substrate using the same, and method for manufacturing wiring film

Patent metadata

Field	Value
Publication number	US-9704742-B2
Application number	US-201213604452-A
Country	US
Kind code	B2
Filing date	Sep 5, 2012
Priority date	Sep 6, 2011
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

An Al wiring film having a tapered shape is obtained easily and in a stable manner. An Al wiring film has a double-layer structure including a first Al alloy layer made of Al or an Al alloy, and a second Al alloy layer laid on the first Al alloy layer and having a composition different from a composition of the first Al alloy layer by containing at least one element of Ni, Pd, and Pt. The second Al alloy layer is etched by an alkaline chemical solution used in a developing process of a photoresist, and an end portion of the second Al alloy layer recedes from an end portion of the photoresist. Thereafter, by performing wet etching using the photoresist as a mask, a cross section of the Al wiring film becomes a tapered shape.

First claim

What is claimed is:

1. A wiring film comprising:
a first layer made of a first Al alloy containing at least one element of Ni, Pd, and Pt;
a second layer laid on said first layer and made of a second Al alloy containing nitrogen; and
a third layer laid on said second layer and made of a third Al alloy containing at least one element of Ni, Pd, and Pt, wherein
the wiring film has a tapered shape in cross section with a width smaller in an upper portion thereof than a width in a bottom portion thereof.

2. The wiring film according to claim 1 ,
wherein said first Al alloy and said third Al alloy have an identical composition.

3. The wiring film according to claim 1 ,
said first, second, and third Al alloys individually contain 0.5 mol % or more and 10 mol % or less of at least one element of Ni, Pd, and Pt.

4. An active matrix substrate comprising:
a pixel electrode formed of a conductive film of an oxide material; and
a switching element connected to said pixel electrode,
wherein said switching element is a thin-film transistor including the wiring film according to claim 1 as an electrode thereof, and
said third layer of said wiring film serving as said electrode is connected to said pixel electrode.

Assignees

• Fujiwara Kazuyuki
• Inoue Kazunori
• Yamabe Takahito
• Mitsubishi Electric Corp

Inventors

• Fujiwara Kazuyuki
• Inoue Kazunori
• Yamabe Takahito

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• H10W20/031 Primary

  of conductive parts of the interconnections · CPC title

• H01L21/76838 Primary

  Electricity · mapped topic

• H01L29/458

  Electricity · mapped topic

• H01L21/283

  Electricity · mapped topic