Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus

Patent metadata

Field	Value
Publication number	US-9704733-B2
Application number	US-201314434864-A
Country	US
Kind code	B2
Filing date	Nov 15, 2013
Priority date	Nov 16, 2012
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.

First claim

The invention claimed is:

1. A storing container for storing therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure, comprising:
a tantalum metal layer,
a tantalum carbide layer provided on an internal space side of the tantalum metal layer, and
a tantalum silicide layer provided on a side further toward the internal space side than the tantalum carbide layer,
wherein the tantalum silicide layer is provided over an entire wall surface that defines the internal space, and
wherein the tantalum silicide layer has a thickness of 1 μm to 300 μm.

2. The storing container according to claim 1 , wherein the tantalum silicide layer is formed of TaSi 2 .

3. The storing container according to claim 2 , wherein the container includes an upper container and a lower container which are fittable to each other and define the internal space.

4. The storing container according to claim 1 , wherein the container includes an upper container and a lower container which are fittable to each other and define the internal space.

5. A method for manufacturing a storing container for storing therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure, comprising:
forming a tantalum silicide layer by heating while bringing molten Si into contact with a tantalum carbide layer included in a part of the storing container,
wherein the tantalum silicide layer has a thickness of 1 μm to 300 μm.

6. The method according to claim 5 , wherein the container includes an upper container and a lower container which are fittable to each other and define an internal space.

7. The method according to claim 5 , wherein the tantalum silicide layer is provided over an entire wall surface that defines an internal space.

Assignees

• Toyo Tanso Co

Inventors

• Torimi Satoshi
• Yabuki Norihito
• Nogami Satoru

Classifications

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title