Siloxanes, doped siloxanes, methods for their synthesis, compositions containing the same, and films formed therefrom

Patent metadata

Field	Value
Publication number	US-9704713-B1
Application number	US-201615091798-A
Country	US
Kind code	B1
Filing date	Apr 6, 2016
Priority date	Nov 26, 2008
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.

First claim

What is claimed is:

1. A siloxane, germoxane, or silagermoxane compound, comprising at least 7 units of the formula

—(OA[O d H] 2 )— or —(OA[O d H] 3 ), where each instance of A is independently Si or Ge, and each instance of d is independently 0 or 1, and one or more units of the formula O c DR 1 p , where each instance of D is independently Sb, As, P, B or Al, each instance of p is independently an integer from 0 to 2, and each instance of R 1 is independently alkyl, aryl, aralkyl, H, OH or AR 2 , where R 2 is H, OH or —(OA) y (O c H) 2y+1 , y is an integer from 1 to 4, and each instance of c independently 0 or 1.

2. The compound of claim 1 , wherein A is Si.

3. The compound of claim 2 , having the formula -(c-(OA) q [O d H] 2q-x )—, where q is an integer from 7 to 12, and x is an integer from 0 to q.

4. The compound of claim 3 , wherein d=0.

5. The compound of claim 2 , having at least 15 units of the formula ═(OSi[O d H])—, —(OSi[O d H] 2 )— or —(OSi[O d H] 3 ).

6. The compound of claim 5 , wherein d=0.

7. The compound of claim 1 , wherein d=0.

8. The compound of claim 1 , having at least 15 units of the formula ═(OA[O d H])—, —(OA[O d H] 2 )— or —(OA[O d H] 3 ).

9. The compound of claim 8 , wherein d=0.

10. The compound of claim 8 , wherein D is B.

11. The compound of claim 8 , wherein D is P.

12. The compound of claim 8 , wherein R 1 is C 1 -C 6 alkyl or C 6 -C 12 aryl.

13. The compound of claim 8 , wherein R 1 is H or OH.

14. The compound of claim 1 , wherein D is B and c=0, or D is P and c=1.

15. The compound of claim 1 , wherein D is B.

16. The compound of claim 1 , wherein D is P.

17. The compound of claim 1 , wherein R 1 is C 1 -C 6 alkyl.

18. The compound of claim 1 , wherein R 1 is C 6 -C 12 aryl.

19. The compound of claim 18 , wherein R 1 is phenyl.

20. The compound of claim 1 , wherein R 1 is H or OH.

Assignees

• Thin Film Electronics Asa

Inventors

• Guo Wenzhuo
• Ridley Brent
• Rockenberger Joerg

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6516

  of treatments performed after formation of the materials · CPC title

• H10P14/6346

  using printing, e.g. ink-jet printing · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title