Parasitic channel mitigation via reaction with active species

Patent metadata

Field	Value
Publication number	US-9704705-B2
Application number	US-201514847252-A
Country	US
Kind code	B2
Filing date	Sep 8, 2015
Priority date	Sep 8, 2015
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a substrate comprising silicon and at least one active species coupled with an external species or capable of reacting with an external species; and
a III-nitride material region located over a surface region of the substrate,
wherein the concentration of the active species is at least about 10 19 /cm 3 , and
wherein the peak of the sum of the concentrations of Group III species in the substrate is less than about 10 17 /cm 3 .

2. The semiconductor structure of claim 1 , wherein the at least one active species comprises oxygen, nitrogen, carbon, copper, and/or iron.

3. The semiconductor structure of claim 1 , wherein the peak of the sum of the concentrations of Al, Ga, and In in the substrate is less than about 10 17 /cm 3 .

4. The semiconductor structure of claim 1 , wherein the peak concentration of Al, Ga, and/or In in the substrate is less than about 10 17 /cm 3 .

5. The semiconductor structure of claim 1 , wherein the substrate comprises at least a layer having a resistivity of greater than about 10 2 Ohms-cm.

6. The semiconductor structure of claim 1 , wherein the substrate is a silicon substrate.

7. The semiconductor structure of claim 6 , wherein the substrate is a bulk silicon wafer.

8. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises GaN.

9. The semiconductor structure of claim 1 , wherein the external species comprises all or part of a precursor of the III-nitride material.

10. The semiconductor structure of claim 9 , wherein the external species comprises an organic species.

11. The semiconductor structure of claim 9 , wherein the external species comprises a group III element.

12. The semiconductor structure of claim 11 , wherein the external species comprises Al, Ga, and/or In.

13. The semiconductor structure of claim 1 , wherein the semiconductor structure comprises a transistor located over the surface region of the substrate.

14. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride device region.

15. A semiconductor structure, comprising:
a silicon-on-insulator substrate comprising at least one active species coupled with an external species or capable of reacting with an external species; and
a III-nitride material region located over a surface region of the substrate,
wherein the concentration of the active species is at least about 10 19 /cm 3 .

16. A semiconductor structure, comprising:
a silicon carbide substrate comprising at least one active species coupled with an external species or capable of reacting with an external species; and
a III-nitride material region located over a surface region of the substrate,
wherein the concentration of the active species is at least about 10 19 /cm 3 .

17. A semiconductor structure, comprising:
a substrate comprising silicon and at least one active species coupled with an external species or capable of reacting with an external species, wherein the external species comprises a contaminant within a reactor and/or a species that forms a part of the reactor; and
a III-nitride material region located over a surface region of the substrate,
wherein the concentration of the active species is at least about 10 19 /cm 3 .

Assignees

• M/A-Com Tech Solutions Holdings Inc
• Macom Tech Solutions Holdings Inc

Inventors

• Roberts John Claassen
• Cook Jr James W

Classifications

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/22

  using masks · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title