Refresh method of controlling self-refresh cycle with temperature

Patent metadata

Field	Value
Publication number	US-9704558-B2
Application number	US-201615224683-A
Country	US
Kind code	B2
Filing date	Aug 1, 2016
Priority date	Oct 22, 2015
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

Provided is a method of refreshing a memory device by controlling a self-refresh cycle according to temperature. In the method, first self-refresh and second self-refresh are performed according to inner temperature of the memory device and a self-refresh cycle is controlled such that an all-bank-refresh (ABR) operation is not performed simultaneously with the start of the second self-refresh. The ABR operation is performed at the start of third self-refresh when the sum of a section of the first self-refresh in which the ABR operation is not performed and a section of the second self-refresh in which the ABR operation is not performed corresponds to a self-refresh cycle.

First claim

What is claimed is:

1. A method of refreshing a memory device, the method comprising:
generating a refresh clock signal according to an enter self-refresh command and an exit self-refresh command; and
performing self-refresh to refresh memory cell rows according to the refresh clock signal,
wherein, the step of performing self-refresh comprises:
performing a first self-refresh according to a first inner temperature of the memory device; and
performing a second self-refresh according to a second inner temperature of the memory device, and
wherein, when the second inner temperature is different than the first inner temperature, controlling a self-refresh cycle in a manner such that an all-bank-refresh (ABR) operation of the second self-refresh is not performed simultaneously with start of the second self-refresh.

2. The method of claim 1 , wherein the performing of the self-refresh comprises:
generating the refresh clock signal having a fixed cycle during the first self-refresh and the second self-refresh;
setting a first maximum count value according to the first inner temperature during the first self-refresh;
setting a second maximum count value according to the second inner temperature during the second self-refresh; and
performing an ABR operation of the second self-refresh, based on the refresh clock signal and the first and second maximum count values.

3. The method of claim 2 , wherein, when the second inner temperature is higher than the first inner temperature, the second maximum count value is set to be greater than the first maximum count value.

4. The method of claim 2 , wherein the performing of the ABR operation of the second self-refresh comprises:
calculating a first-temperature cycle value by multiplying a number of first clock cycles of the refresh clock signal during the first self-refresh by the first maximum count value;
calculating a second-temperature cycle value by multiplying a number of second clock cycles of the refresh clock signal during the second self-refresh by the second maximum count value; and
starting the ABR operation of the second self-refresh at a point of time corresponding to an average of the first-temperature cycle value and the second-temperature cycle value.

5. The method of claim 1 , wherein the performing of the self-refresh comprises:
generating a first refresh clock signal having a first cycle according to the first inner temperature during the first self-refresh;
generating a second refresh clock signal having a second cycle according to the second inner temperature during the second self-refresh;
setting a maximum count value during the first self-refresh and the second self-refresh; and
performing an ABR operation of the second self-refresh, based on the first and second refresh clock signals having the first and second cycles and the maximum count value.

6. The method of claim 5 , wherein, when the second temperature is higher than the first temperature, the second cycle is set to be shorter than the first cycle.

7. The method of claim 5 , wherein the performing of the ABR operation of the second self-refresh comprises:
counting a number of first clock cycles of the first refresh clock signal during the first self-refresh;
counting a number of second clock cycles of the second refresh clock signal during the second self-refresh right after counting the number of the first clock cycles; and
starting the ABR operation of the second self-refresh when the number of the second clock cycles reaches the maximum count value.

8. A method of refreshing a memory device, the method comprising:
performing a first self-refresh according to a first inner temperature of the memory device, wherein the first self-refresh includes a first section where an all-bank-refresh (ABR) operation of the first self-refresh is performed but interrupted before completing the first self-refresh due to start of a first normal operation;
performing a second self-refresh according to a second inner temperature of the memory device, wherein the second self-refresh includes a second section where an all-bank-refresh (ABR) operation of the second self-refresh is performed but interrupted before completing the second self-refresh due to start of a second normal operation; and
performing an all-bank-refresh (ABR) operation at start of a third self-refresh when a sum of the first section of the first self-refresh and the second section of the second self-refresh corresponds to a self-refresh cycle.

9. The method of claim 8 , wherein the performing of the ABR operation at the start of the third self-refresh comprises:
counting a number of first clock cycles of a refresh clock signal having a first cycle in the first section;
counting a number of second clock cycles of the refresh clock signal having a second cycle in the second section; and
performing the ABR operation at the start of the third self-refresh when a sum of a first time which is a product of the first cycle and the number of the first clock cycles and a second time which is a product of the second cycle and the number of the second clock cycles corresponds to the self-refresh cycle.

10. The method of claim 9 , wherein the ABR operation of the third self-refresh is performed according to an enter self-refresh command.

11. The method of claim 9 , wherein, when a sum of the first time and the second time does not correspond to the self-refresh cycle, the performing of the ABR operation of the third self-refresh comprises inputting the sum of the first time and the second time to a flip-flop according to an exit self-refresh command.

12. The method of claim 11 , wherein the ABR operation of the self-refresh is started at a point of time when the sum of the first time and the second time and an output of the flip-flop corresponds to the self-refresh cycle.

13. The method of claim 9 , wherein each of the counting of the first clock cycles and the counting of the second clock cycles comprises:
counting the refresh clock signal, dividing the refresh clock signal and generating divided clock signals;
providing the number of the first clock cycles by selectively latching the divided clock signals based on information regarding the first inner temperature of the memory device; and
providing the number of the second clock cycles by selectively latching the divided clock signals based on information regarding the second inner temperature of the memory device.

14. The method of claim 8 , further comprising:
generating a first refresh clock signal having a first cycle according to the first inner temperature of the memory device during the first self-refresh; and
generating a second refresh clock signal having a second cycle according to the second inner temperature of the memory device during the second self-refresh.

15. The method of claim 14 , wherein, when the second inner temperature is higher than the first inner temperature, the second cycle is set to be shorter than the first cycle.

16. A method of refreshing a memory device, the method comprising:
generating a refresh clock signal according to an enter self-refresh command and an exit self-refresh command; and
performing self-refresh to refresh memory cell rows according to the refresh clock signal,
wherein, the step of performing self-refresh comprises:
performing a first self-refresh according to a first inner temperature of the memory device; and
performing a second self-refresh according to a second inner temperature of the memory device, and
wherein, when the second inner temperature is higher than the first inner temperatur

Assignees

• Samsung Electronics Co Ltd

Inventors

• Doo Su-Yeon
• Oh Tae-Young
• Kim Cheol
• Park Geun-Tae

Classifications

• G11C11/4091

  Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating · CPC title

• G11C11/40618

  Refresh operations over multiple banks or interleaving · CPC title

• G11C11/4087

  Address decoders, e.g. bit - or word line decoders; Multiple line decoders · CPC title

• G11C11/40626 Primary

  Temperature related aspects of refresh operations · CPC title

• G11C11/4082

  Address Buffers; level conversion circuits · CPC title