Magnetoresistive sensor with SAF structure having amorphous alloy layer

Patent metadata

Field	Value
Publication number	US-9704517-B2
Application number	US-201514962950-A
Country	US
Kind code	B2
Filing date	Dec 8, 2015
Priority date	Dec 13, 2013
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.

First claim

What is claimed is:

1. A magnetoresistive (MR) sensor having a cross-track direction and a down-track direction, the sensor comprising:
a first synthetic antiferromagnetic (SAF) structure having an RKKY spacer coupling layer and an amorphous alloy layer that includes a ferromagnetic material and a refractory material;
a first antiferromagnetic (AFM) layer;
a second SAF structure having an RKKY spacer coupling layer and an amorphous alloy layer that includes a ferromagnetic material and a refractory material;
a second AFM layer; and
a sensor stack between and in contact with a magnetic layer of the first SAF structure and with a magnetic layer of the second SAF structure, wherein each magnetic layer of the first and second SAF structures has a width greater than a width of each respective sensor stack contact surface, the first AFM layer, the first SAF structure, the sensor stack, the second SAF structure and the second AFM layer aligned, in order, along the down-track direction.

2. The MR sensor of claim 1 , wherein the refractory material is selected from the group consisting of tantalum, niobium, hafnium, and zirconium.

3. The MR sensor of claim 1 , wherein the first SAF structure is between a shield element and a trailing edge of the sensor stack.

4. The MR sensor of claim 3 , wherein the first SAF structure is in contact with the trailing edge of the sensor stack.

5. The MR sensor of claim 1 , wherein the second SAF structure is between a shield element and a leading edge of the sensor stack.

6. The MR sensor of claim 5 , wherein the second SAF structure is in contact with the leading edge of the sensor stack.

7. The MR sensor claim 1 , wherein the first SAF structure comprises the amorphous alloy layer on a first side of the RKKY spacer coupling layer and a second amorphous alloy layer on a second side of the RKKY spacer coupling layer.

8. The MR sensor of claim 7 , wherein, for the first SAF structure, the amorphous alloy layer is anti-ferromagnetically coupled to the second amorphous alloy layer.

9. The MR sensor of claim 1 , wherein the first SAF structure further comprises:
a crystalline ferromagnetic layer in contact with the amorphous alloy layer of the first SAF structure.

10. The MR sensor of claim 1 , wherein the second SAF structure further comprises:
a crystalline ferromagnetic layer in contact with the amorphous alloy layer of the second SAF structure.

11. An MR sensor having a leading edge and a trailing edge, the MR sensor comprising:
a first antiferromagnetic (AFM) layer;
a sensor stack;
a first synthetic antiferromagnetic (SAF) structure between the first AFM layer and the sensor stack, the first SAF structure including, in order, a magnetic layer adjacent to and in contact with the sensor stack, an RKKY coupling spacer layer, and a first amorphous alloy layer including a ferromagnetic material and a refractory material;
a second AFM layer; and
a second synthetic antiferromagnetic (SAF) structure between the sensor stack and the second AFM layer, the second SAF structure including, in order, a magnetic layer adjacent to and in contact with the sensor stack, an RKKY coupling spacer layer, and a first amorphous alloy layer, the first amorphous alloy layer of the second SAF structure including a ferromagnetic material and a refractory material,
wherein each magnetic layer of the first and second SAF structures has a width greater than a width of each respective sensor stack contact surface,
wherein the first AFM layer and the first SAF structure are closer to the trailing edge than the second AFM layer and the second SAF structure.

12. The MR sensor of claim 11 , wherein the first SAF structure and the second SAF structure are magnetically coupled to side shields of the MR sensor.

13. The MR sensor of claim 11 , wherein the first SAF structure is magnetically decoupled from a shield adjacent to the trailing edge of the MR sensor.

14. The MR sensor of claim 11 , wherein for each of the first SAF structure and the second SAF structure, the RKKY coupling spacer layer has a first surface in contact with the first amorphous alloy layer and a second opposite surface in contact with a second amorphous alloy layer.

15. The MR sensor of claim 11 , wherein the first amorphous alloy layer of the first SAF structure is in contact with the first AFM layer and the first amorphous alloy layer of the second SAF structure is in contact with the second AFM layer.

16. The MR sensor of claim 11 , wherein the second SAF structure is included between a shield element and a leading edge of the sensor stack.

17. The MR sensor of claim 11 , wherein the first SAF structure is included between a shield element and a trailing edge of the sensor stack.

Assignees

• Seagate Technology Llc

Inventors

• Singleton Eric W
• Tan Liwen
• Yi Jae-Young

Classifications

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G01R33/025

  Compensating stray fields {(G01R33/0017 takes precedence)} · CPC title

• G11B5/398

  Specially shaped layers · CPC title

• G11B5/3916

  Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide · CPC title

• H01F10/3204

  Exchange coupling of amorphous multilayers · CPC title