Asymmetrical memristor

Patent metadata

Field	Value
Publication number	US-9704093-B2
Application number	US-201514799488-A
Country	US
Kind code	B2
Filing date	Jul 14, 2015
Priority date	Jan 14, 2013
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

Embodiments of the present invention provide a memristor having a first electrode, a second electrode and a memristive layer arranged between the first electrode and the second electrode. Thereby, the memristor is adapted to obtain an asymmetrical current density distribution in the memristive layer.

First claim

The invention claimed is:

1. An artificial tripartite synapse, comprising:
a memristor, comprising a first electrode, a second electrode and a memristive layer arranged between the first electrode and the second electrode, wherein the memristor is adapted such that an asymmetrical current density distribution is obtained in the memristive layer; and
a field effect transistor;
wherein the memristor is connected to a gate of the field effect transistor;
wherein the memristive layer comprises an asymmetrical doping density distribution or an asymmetrical trap density distribution such that the asymmetrical current density distribution is obtained in the memristive layer; and
wherein the current density varies along an equipotential line within the memristive layer; and
wherein the first electrode and the second electrode are the same size.

2. The artificial tripartite synapse according to claim 1 , wherein the memristor comprises an asymmetry with respect to a material feature of the memristor which is unaffected by a state of the memristor, to obtain the asymmetrical current density distribution in the memristive layer.

3. The artificial tripartite synapse according to claim 1 , wherein the memristive layer comprises TiO 2 .

4. The artificial tripartite synapse according to claim 1 , wherein the first electrode and/or the second electrode comprises Ti.

5. A neural network comprising an artificial tripartite synapse according to claim 1 .

6. The neural network according to claim 5 , further comprising:
a first neuron;
a second neuron;
wherein the artificial tripartite synapse is connected in series between the first neuron and the second neuron.

Assignees

• Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E V
• Univ Ilmenau Tech

Inventors

• Klefenz Frank
• Husar Peter
• Williamson Adam
• Schumann Lars
• Hiller Lars
• Hoerselmann Ingo
• Schober Andreas

Classifications

• G11C2213/52

  Structure characterized by the electrode material, shape, etc. · CPC title

• G11C11/54

  using elements simulating biological cells, e.g. neuron · CPC title

• G06N3/063 Primary

  using electronic means · CPC title

• G11C13/0007

  comprising metal oxide memory material, e.g. perovskites · CPC title

• G06N3/065

  Analogue means · CPC title