Conductive film and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9699898-B2
Application number	US-201414913939-A
Country	US
Kind code	B2
Filing date	Dec 26, 2014
Priority date	Dec 27, 2013
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

The present invention provides a conductive film including a plurality of groove units of which horizontal sections are formed in a lattice form, and a plurality of cells that are regions surrounded by the groove units, wherein at least a part of the groove unit include a conductive pattern formed through separation by a separation unit, and a method for preparing the same.

First claim

The invention claimed is:

1. A conductive film, comprising:
a transparent substrate;
a plurality of groove units of which horizontal sections are formed in a lattice form, the groove units comprising two wall surfaces and a floor surface;
one or more separation units in the groove units on the floor surface and separated from each wall surface by a space; and
a plurality of cells that are regions surrounded by the groove units,
wherein the groove units include an adhesive strength adjusting layer on the groove floor surface and a conductive layer on the adhesive strength adjusting layer forming a conductive pattern of which at least a part is formed through separation by the one or more separation units,
wherein a maximum width of the groove unit is from 0.1 μm to 20 μm;
wherein, in the conductive film, a total sum of a horizontal sectional area of the separation unit measured based on a floor surface of the groove unit is 5% to 90% of a total sum of a horizontal sectional area of the groove unit; and
wherein a width of the conductive pattern formed through separation by the separation unit is from 0.1 μm to 5 μm.

2. The conductive film of claim 1 , comprising a conductive material provided on the separation unit, and insulated with the conductive pattern in the groove unit.

3. The conductive film of claim 1 , wherein a maximum depth of the groove unit is from 0.2 μm to 10 μm.

4. The conductive film of claim 1 , wherein the lattice form includes a groove unit formed by widthwise extension, a groove unit formed by lengthwise extension and an intersection at which these intersect.

5. The conductive film of claim 1 , wherein a border of a horizontal section shape of the separation unit includes a straight line, a curve, a wave line, a zigzag line or a combination thereof.

6. The conductive film of claim 5 , wherein the horizontal section shape of the separation unit includes a quadrangle, a triangle, a circle, an ellipse, a polygon, a figure formed by connecting two or more arcs with different radii of curvature, a figure formed by connecting at least one arc and at least one straight line, or a form mixing these.

7. The conductive film of claim 1 , wherein a vertical section shape of the separation unit is a plane shape, a convex shape or a concave shape.

8. The conductive film of claim 1 , wherein a border of a vertical section shape of the separation unit includes a straight line, a curve, a wave line, a zigzag line or a combination thereof.

9. The conductive film of claim 7 , wherein the vertical section shape of the separation unit is a convex shape, and a height difference between a highest point of the separation unit and a floor surface of the groove unit is from 0.5 times to 1 time of a depth of the groove unit.

10. The conductive film of claim 1 , wherein the separation unit and the cell satisfy the relationship of the following [Equation 1]:

1

10
6

≤

Horizontal
⁢

⁢
Sectional

⁢

Area
⁢

⁢
of
⁢

⁢
One
⁢

⁢
Separation
⁢

⁢
Unit

Horizontal
⁢

⁢
Sectional
⁢

⁢
Area
⁢

⁢
of
⁢

⁢
One
⁢

⁢
Cell

≤

1
5

[

Equation
⁢

⁢
1

]

wherein, the horizontal sectional area means a value measured based on an uppermost surface of the conductive film.

11. The conductive film of claim 1 , wherein a width of a conductive pattern part formed by connecting a conductive pattern that is not formed through separation by the separation unit is from 0.2 μm to 10 μm.

12. The conductive film of claim 4 , wherein the conductive pattern formed at the intersection has a cross shape connecting 4 corners of the intersection, and a width of the cross-shaped conductive pattern is from 0.1 μm to 10 μm.

13. The conductive film of claim 1 , wherein a thickness of the conductive pattern is from 0.01 μm to 3 μm.

14. The conductive film of claim 1 , wherein the conductive pattern is formed in two or more layers.

15. The conductive film of claim 14 , wherein the conductive pattern formed in two or more layers is formed using different materials.

Assignees

• Lg Chemical Ltd

Inventors

• Bae Sunghak
• Lee Jinyong
• Han Sangcholl

Classifications

• H05K1/0296 Primary

  Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295 (H05K1/11 takes precedence; lay-out adapted to mounted component configuration H05K1/18) · CPC title

• H05K3/0011

  Working of insulating substrates or insulating layers · CPC title

• G06F3/044

  by capacitive means · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H01L51/445

  Electricity · mapped topic