Vertical-cavity surface-emitting laser device and vertical-cavity surface-emitting laser array device

Patent metadata

Field	Value
Publication number	US-9698568-B2
Application number	US-201414538007-A
Country	US
Kind code	B2
Filing date	Nov 11, 2014
Priority date	May 25, 2012
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

A cathode electrode, cathode pad electrodes, cathode wiring electrodes, an anode electrode, an anode pad electrode, and an anode wiring electrode are disposed on the surface of a vertical-cavity surface-emitting laser device. A light-emitting-region multilayer portion having active layers sandwiched by clad layers and DBR layers is formed directly below the anode electrode. A region where the light-emitting-region multilayer portion is formed serves as a light-emitting region. The light-emitting region is positioned closer to one end of the first direction than is a suction region onto which a flat collet sucks with respect to the first direction, in such a way that the light-emitting region is substantially in contact with or spaced a predetermined distance from the suction region.

First claim

The invention claimed is:

1. A vertical-cavity surface-emitting laser device comprising:
a base substrate;
an N-type semiconductor multilayer reflecting layer, an active layer including a quantum well, and a P-type semiconductor multilayer reflecting layer located on a surface of the base substrate;
an anode electrode connected to the P-type semiconductor multilayer reflecting layer; and
a cathode electrode connected to the N-type semiconductor multilayer reflecting layer,
a light-emitting-region multilayer portion emitting laser light, the light-emitting-region multilayer portion being narrower than the base substrate when viewed from a direction of the surface of the base substrate and including at least the layers from the N-type semiconductor multilayer reflecting layer upwards,
the vertical-cavity surface-emitting laser device being adapted to be mounted onto an external circuit board by sucking the vertical-cavity surface-emitting laser device with a collet from a side of the base substrate where the light-emitting-region multilayer portion is located,
wherein when viewed from the direction of the surface of the base substrate, any region where the light-emitting-region multilayer portion is formed is disposed so as not to overlap a suction region of the collet, and
wherein a horizontal cross-section of the collet is smaller than that of the base substrate.

2. The vertical-cavity surface-emitting laser device according to claim 1 , wherein:
the base substrate has a first length along a first direction, and a second length along a second direction that is perpendicular to the first direction, the first direction is longer than the second length; and
when the suction region is substantially equal in size to the second length in both the first direction and the second direction, the region in which the light-emitting-region multilayer portion is formed is located at a predetermined position along the first direction with respect to the suction region, so as to be in contact with or spaced from the suction region.

3. The vertical-cavity surface-emitting laser device according to claim 2 , further comprising:
an anode pad electrode formed on the side of the base substrate where the light-emitting-region multilayer portion is located, the anode pad electrode being connected to the anode electrode; and
a cathode pad electrode formed on the side of the base substrate where the light-emitting-region multilayer portion is located, the cathode pad electrode being connected to the cathode electrode,
wherein the anode pad electrode and the cathode pad electrode are disposed on a same side along the second direction with respect to the light-emitting-region multilayer portion.

4. The vertical-cavity surface-emitting laser device according to claim 3 , wherein the anode pad electrode and the cathode pad electrode are arrayed along the first direction.

5. The vertical-cavity surface-emitting laser device according to claim 4 , wherein the cathode pad electrode includes two cathode pad electrodes, and the two cathode pad electrodes are positioned so as to sandwich the anode pad electrode when viewed from the direction of the surface of the base substrate.

6. The vertical-cavity surface-emitting laser device according to claim 4 , wherein a spacing between the anode pad electrode and the cathode pad electrode along the first direction is constant.

7. A vertical-cavity surface-emitting laser array device comprising a plurality of the vertical-cavity surface-emitting laser devices according to claim 1 , wherein the light-emitting-region multilayer portions of the vertical-cavity surface-emitting laser devices are spaced a predetermined distance from each other.

8. A vertical-cavity surface-emitting laser array device comprising:
a plurality of vertical-cavity surface-emitting laser devices arrayed on a base substrate that is a single substrate, the vertical-cavity surface-emitting laser devices each including
the base substrate,
an N-type semiconductor multilayer reflecting layer, an active layer including a quantum well, and a P-type semiconductor multilayer reflecting layer formed on a surface of the base substrate,
an anode electrode connected to the P-type semiconductor multilayer reflecting layer, and
a cathode electrode connected to the N-type semiconductor multilayer reflecting layer,

the vertical-cavity surface-emitting laser devices each having a light-emitting-region multilayer portion emitting light, the light-emitting-region multilayer portion being narrower than the base substrate when viewed from a direction of the surface of the base substrate and including at least the layers from the N-type semiconductor multilayer reflecting layer upwards,
the vertical-cavity surface-emitting laser array device being adapted to be mounted to an external circuit board by sucking the vertical-cavity surface-emitting laser array device with a collet from a side of the base substrate where the light-emitting-region multilayer portion is located,
wherein when viewed from the direction of the surface of the base substrate, any region where the light-emitting-region multilayer portion is formed is disposed so as not to overlap a suction region of the collet, and
wherein a horizontal cross-section of the collet is smaller than that of the base substrate.

9. The vertical-cavity surface-emitting laser array device according to claim 8 , wherein:
the base substrate has a first length along a first direction, and a second length along a second direction that is perpendicular to the first direction, the first direction is longer than the second length; and
when the suction region is substantially equal in size to the second length in both the first direction and the second direction, the region where the light-emitting-region multilayer portion is formed in each of the vertical-cavity surface-emitting lasers is located at a predetermined position along the first direction with respect to the suction region, so as to be in contact with or spaced from the suction region.

10. The vertical-cavity surface-emitting laser array device according to claim 9 , wherein:
each of the vertical-cavity surface-emitting laser devices includes
an anode pad electrode formed on the side of the base substrate where the light-emitting-region multilayer portion is located, the anode pad electrode being connected to the anode electrode, and
a cathode pad electrode that is formed on the side of the base substrate where the light-emitting-region multilayer portion is located, the cathode pad electrode being connected to the cathode electrode; and

the anode pad electrode and the cathode pad electrode of each of the vertical-cavity surface-emitting laser devices are disposed on a same side along the second direction with respect to the light-emitting-region multilayer portion to which the anode pad electrode and the cathode pad electrode are connected.

11. The vertical-cavity surface-emitting laser array device according to claim 10 , wherein the anode pad electrode and the cathode pad electrode of each of the vertical-cavity surface-emitting laser devices are arrayed along the first direction.

12. The vertical-cavity surface-emitting laser array device according to claim 11 , wherein the cathode pad electrode of each of the vertical-cavity surface-emitting laser devices includes two cathode pad electrodes, and the two cathode pad electrodes are positioned so as to sandwich the anode pad electrode when viewed from the direction of the surface of the base substrate.

13. The vertical-cavity surface-emitting laser array device according to claim 11 , wherein a spacing between the a

Assignees

• Murata Manufacturing Co

Inventors

• Iwata Keiji
• Matsubara Ippei
• Kona Takayuki
• Watanabe Hiroshi
• Yanagase Masashi

Classifications

• H01S5/04257

  having positive and negative electrodes on the same side of the substrate · CPC title

• H01S5/04256

  characterised by the configuration · CPC title

• H10W72/0711

  Apparatus therefor · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H01S2301/176

  Specific passivation layers on surfaces other than the emission facet · CPC title