Method of fabricating optical sensor device and thin film transistor device

Patent metadata

Field	Value
Publication number	US-9698180-B2
Application number	US-201615084458-A
Country	US
Kind code	B2
Filing date	Mar 29, 2016
Priority date	Sep 9, 2015
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

An integration method of fabricating optical sensor device and thin film transistor device includes the follow steps. A substrate is provided, and a gate electrode and a bottom electrode are formed on the substrate. A first insulating layer is formed on the gate electrode and the bottom electrode, and the first insulating layer at least partially exposes the bottom electrode. An optical sensing pattern is formed on the bottom electrode. A patterned transparent semiconductor layer is formed on the first insulating layer, wherein the patterned transparent semiconductor layer includes a first transparent semiconductor pattern covering the gate electrode, and a second transparent semiconductor pattern covering the optical sensing pattern. A source electrode and a drain electrode are formed on the first transparent semiconductor pattern. A modification process including introducing at least one gas is performed on the second transparent semiconductor pattern to transfer the second transparent semiconductor pattern into a conductive transparent top electrode.

First claim

What is claimed is:

1. A method of fabricating an optical sensor device and a thin film transistor device, comprising:
providing a substrate, the substrate having a switching device region and an optical sensor device region;
forming a first patterned metal layer on the substrate, wherein the first patterned metal layer comprises a common line, a gate electrode disposed in the switching device region, and a bottom electrode disposed in the optical sensor device region;
forming a first insulating layer on the first patterned metal layer, the first insulating layer covering the gate electrode, and the first insulating layer at least partially exposing the bottom electrode;
forming an optical sensing pattern on the bottom electrode;
forming a patterned transparent semiconductor layer on the first insulating layer, wherein the patterned transparent semiconductor layer comprises a first transparent semiconductor pattern covering the gate electrode, and a second transparent semiconductor pattern covering the optical sensing pattern;
forming a second patterned metal layer on the patterned transparent semiconductor layer, wherein the second patterned metal layer comprises a connection electrode connected to the common line, and a source electrode and a drain electrode partially covering the first transparent semiconductor pattern respectively, and the second patterned metal layer at least partially exposes the second transparent semiconductor pattern; and
performing a modification process on the second transparent semiconductor pattern, the modification process comprising introducing at least one gas to transfer the second transparent semiconductor pattern into a transparent top electrode with electrical conductibility; and
forming a second insulating layer and a first patterned transparent conductive layer sequentially on the second patterned metal layer, wherein the second insulating layer and the first patterned transparent conductive layer at least partially exposes the transparent top electrode; and
forming a third insulating layer and a second patterned transparent conductive layer sequentially on the first patterned transparent conductive layer, wherein the third insulating layer and the second patterned transparent conductive layer expose the transparent top electrode, the first patterned transparent conductive layer comprises a first electrode, the second patterned transparent conductive layer comprises a second electrode, one of the first electrode and the second electrode is connected to the drain electrode, and the other one of the first electrode and the second electrode is connected to the connection electrode.

2. The method of fabricating the optical sensor device and the thin film transistor device according to claim 1 , wherein the second insulating layer at least partially exposes the drain electrode, the first patterned transparent conductive layer comprises a pixel electrode, and the pixel electrode is connected to the drain electrode.

3. The method of fabricating the optical sensor device and the thin film transistor device according to claim 1 , wherein the second electrode is a pixel electrode connected to the drain electrode, and the first electrode is a common electrode connected to the connection electrode.

4. The method of fabricating the optical sensor device and the thin film transistor device according to claim 3 , wherein the second patterned transparent conductive layer further comprises a bridge electrode, and the first electrode and the connection electrode are connected to each other through the bridge electrode.

5. The method of fabricating the optical sensor device and the thin film transistor device according to claim 1 , wherein the second electrode is a common electrode connected to the connection electrode, and the first electrode is a pixel electrode connected to the drain electrode.

6. The method of fabricating the optical sensor device and the thin film transistor device according to claim 1 , wherein the step of forming the second insulating layer or the step of forming the third insulating layer includes performing a chemical vapor deposition process, and the modification process comprises introducing the at least one gas while performing the chemical vapor deposition process to transfer the second transparent semiconductor pattern into the transparent top electrode.

7. The method of fabricating the optical sensor device and the thin film transistor device according to claim 6 , wherein the at least one gas comprises a mixture of silane gas, ammonia gas and nitrogen gas.

8. The method of fabricating the optical sensor device and the thin film transistor device according to claim 1 , further comprising forming a fourth insulating layer on the second insulating layer before forming the first patterned transparent conductive layer, wherein the fourth insulating layer at least partially exposes the bottom electrode and the drain electrode.

9. The method of fabricating the optical sensor device and the thin film transistor device according to claim 1 , further comprising forming an etching stop layer on the first insulating layer and the patterned transparent semiconductor layer before forming the second patterned metal layer, wherein the etching stop layer exposes the second transparent semiconductor pattern and partially exposes the first transparent semiconductor pattern, and the source electrode and the drain electrode are connected to the first transparent semiconductor pattern exposed by the etching stop layer.

10. The method of fabricating the optical sensor device and the thin film transistor device according to claim 1 , wherein the modification process comprises an anneal process, and the at least one gas comprises hydrogen.

11. The method of fabricating the optical sensor device and the thin film transistor device according to claim 10 , wherein the at least one gas comprises vapor or clean dry air.

12. The method of fabricating the optical sensor device and the thin film transistor device according to claim 1 , wherein the modification process comprises a plasma process, and the at least one gas comprises hydrogen.

13. A method of fabricating an optical sensor device and a thin film transistor device, comprising:
providing a substrate, the substrate having a switching device region and an optical sensor device region;
forming a first patterned metal layer on the substrate, wherein the first patterned metal layer comprises a first pattern disposed in the switching device region, and a second pattern disposed in the optical sensor device region;
forming a first insulating layer on the first patterned metal layer, the first insulating layer covering the first pattern and the second pattern;
forming a second patterned metal layer on the first insulating layer, wherein the second patterned metal layer comprises a source electrode and a drain electrode, and the source electrode and the drain electrode are disposed on the first pattern in the switching device region;
forming a patterned transparent semiconductor layer on the first insulating layer, wherein the patterned transparent semiconductor layer comprises a first transparent semiconductor pattern partially covering the source electrode and the drain electrode, and a second transparent semiconductor pattern disposed in the optical sensor device region;
forming a second insulating layer on the first insulating layer, wherein the second insulating layer covers the first transparent semiconductor pattern and at least partially exposes the second transparent semiconductor pattern;
forming an optical sensing pattern on the second insulating layer in the optical sensor d

Assignees

• Au Optronics Corp

Inventors

• Chen Shin-Shueh
• Chen Pei-Ming

Classifications

• H01L31/02005

  Electricity · mapped topic

• H01L29/66765

  Electricity · mapped topic

• H01L31/1884

  Electricity · mapped topic

• H01L31/1864

  Electricity · mapped topic

• H01L27/1443 Primary

  Electricity · mapped topic