Method and apparatus for manufacturing low temperature poly-silicon film, and low temperature poly-silicon film

Patent metadata

Field	Value
Publication number	US-9698012-B2
Application number	US-201414395915-A
Country	US
Kind code	B2
Filing date	Aug 26, 2014
Priority date	Aug 15, 2014
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

Disclosed are a method and an apparatus for manufacturing low temperature poly-silicon film, and a low temperature poly-silicon film. The method includes: providing a substrate; forming an amorphous silicon film; applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state; and recrystallizating the amorphous silicon film in the molten state, a region having a lower temperature serving as a starting point, a region having a higher temperature serving as an end point, to form a low temperature poly-silicon film. The low temperature poly-silicon film manufactured by the above method and apparatus has a greater size of the crystalline grain and a larger electronic mobility than in the existing technology.

First claim

What is claimed is:

1. A method for manufacturing low temperature poly-silicon film, comprising:
providing a substrate;
forming an amorphous silicon film;
applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state; and
recrystallizating the amorphous silicon film in the molten state, a region having a lower temperature serving as a starting point, a region having a higher temperature serving as an end point, to form a low temperature poly-silicon film;
wherein the step of “applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state” comprises:
the amorphous silicon film comprises a plurality of first regions and a plurality of second regions arranged at intervals, each first region is applied with a first temperature and each second region is applied with a second temperature, to change the first regions and the second regions of the amorphous silicon film into a molten state; and further comprising the following steps:
providing a laser apparatus having a single laser source, the laser source being configured to generate a laser beam;
providing a first polarizing apparatus and generating a first polarized light when the laser beam passes through the first polarizing apparatus; and
providing a photo mask, wherein the photo mask comprises a plurality of first light transmission regions and a plurality of second light transmission regions arranged at intervals, wherein first parts of the first polarized light transmit through the first light transmission regions and second parts of the first polarized light first transmit through the second light transmission regions and then transmit through a second polarizing apparatus on each of the second transmission regions to be converted into a second polarized light by the second polarizing apparatus, wherein a polarization direction of the second polarized light is different from a polarization direction of the first polarized light, such that the first temperature is applied on each of the first regions when the first parts of the first polarized light that is formed by allowing the laser beam to transmit through the first polarizing apparatus irradiate the first regions through the first light transmission regions; and the second temperature is applied on each of the second regions when the second polarized light that is formed by allowing the first polarized light that is generated by allowing the laser beam to transmit through the first polarizing apparatus to subsequently transmit through the second polarizing apparatus and the second light transmission regions irradiates the second regions.

2. The method for manufacturing low temperature poly-silicon film according to claim 1 , wherein the step of “applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state” comprises:
irradiating different regions of the amorphous silicon film with laser beams having different energy in order to apply different temperatures to different regions of the amorphous silicon film, to change the amorphous silicon film into a molten state.

3. The method for manufacturing low temperature poly-silicon film according to claim 1 , wherein the first temperature is higher than the second temperature, when the amorphous silicon film in a molten state recrystallizes, and a direction of recrystallization begins from each second region to each first region.

4. The method for manufacturing low temperature poly-silicon film according to claim 1 , wherein an included angle between the polarization direction of the second polarized light and the polarization direction of the first polarized light is greater than zero degree and less than ninety degree.

5. The method for manufacturing low temperature poly-silicon film according to claim 1 , wherein the first polarizing apparatus is a polarizer and the second polarizing apparatus is a polarizer.

6. The method for manufacturing low temperature poly-silicon film according to claim 1 , wherein between the step of “forming an amorphous silicon film” and the step of “applying different temperatures to different regions of the amorphous silicon film by using an excimer laser annealing method, to change the amorphous silicon film into a molten state”, the method for manufacturing low temperature poly-silicon film further comprises:
eliminating hydrogen of the amorphous silicon film.

7. The method for manufacturing low temperature poly-silicon film according to claim 1 , wherein between the step of “providing a substrate” and the step of “forming an amorphous silicon film”, the method for manufacturing low temperature poly-silicon film further comprises:
forming a buffer layer on a surface of the substrate;
the step of “forming an amorphous silicon film” is forming the an amorphous silicon film on the buffer layer.

Assignees

• Shenzhen China Star Optoelect
• Shenzhen China Star Optoelect

Inventors

• Zhang Longxian
• Yu Wei

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H10P14/381

  Beam shaping, e.g. using a mask · CPC title

• H10P14/3816 Primary

  Pulsed laser beam · CPC title