Electrochemical capacitor and semiconductor chip having an electrochemical capacitor

Patent metadata

Field	Value
Publication number	US-9697957-B2
Application number	US-201314381608-A
Country	US
Kind code	B2
Filing date	Feb 28, 2013
Priority date	Feb 28, 2012
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

An integrable electrochemical capacitor and methods for manufacturing the same are disclosed. The electrochemical capacitor comprises a first electrode comprising a first rigid piece having a first porous portion, a second electrode comprising a second rigid piece having a second porous portion, and an electrolyte in contact with the first porous portion and the second porous portion. The structure allows the electrochemical capacitor to be manufactured without a separator film between the electrodes and is compatible with semiconductor manufacturing technologies. The electrochemical capacitor can also be manufactured within a SOI layer 8.

First claim

The invention claimed is:

1. An electrochemical capacitor, comprising;
a silicon-on-insulator layer,
a partial trench through the silicon layer of the silicon-on-insulator layer,
a portion of the silicon layer between the partial trench and the insulating layer of the silicon-on-insulator layer thus defining a bottom surface of the partial trench,
a trench extension extending from the bottom surface of the partial trench thus exposing the insulating layer, wherein the partial trench and the trench extension separates a first rigid piece of the silicon layer from a second rigid piece of the silicon layer,
a first electrode comprising the first rigid piece of the silicon layer having a first porous portion,
a second electrode comprising the second rigid piece of the silicon layer having a second porous portion,
an electrolyte in contact with the first porous portion and the second porous portion, and
a cover.

2. The electrochemical capacitor of claim 1 , wherein the first rigid piece, the second rigid piece and the cover enclose a cavity for the electrolyte.

3. The electrochemical capacitor of claim 2 , wherein the cavity is completely filled with the electrolyte and contains no separator film.

4. The electrochemical capacitor of claim 1 , wherein the insulator layer has a planar surface to which both the first rigid piece and the second rigid piece are attached.

5. The electrochemical capacitor of claim 1 , wherein pores of the first porous portion and the second porous portion form longitudinal channels in the first rigid piece and the second rigid piece.

6. The electrochemical capacitor of claim 5 , wherein each longitudinal channel has a smallest diameter, the smallest diameter being less than 2 nanometers for at least half of the channels.

7. The electrochemical capacitor of claim 6 , wherein the smallest diameter is less than 1.5 nanometers for at least half of the channels.

8. The electrochemical capacitor of claim 5 , wherein the trench is limited by facing surfaces of the first rigid piece and the second rigid piece; and wherein the longitudinal channels are substantially perpendicular to said facing surfaces.

9. The electrochemical capacitor of claim 5 , wherein the longitudinal channels are substantially co-directional with the silicon-on-insulator layer.

10. The electrochemical capacitor of claim 1 , wherein the first rigid piece and the second rigid piece are made of a semiconductor material having a resistivity less than 10 Ω-cm.

11. A semiconductor chip, comprising at least one silicon-on-insulator layer and at least one semiconductor device electrically connected to at least one electrochemical capacitor, the at least one electrochemical capacitor having:
a silicon-on-insulator layer,
a partial trench through the silicon layer of the silicon-on-insulator layer,
a portion of the silicon layer between the partial trench and the insulating layer of the silicon-on-insulator layer thus defining a bottom surface of the partial trench,
a trench extension extending from the bottom surface of the partial trench thus exposing the insulating layer, wherein the partial trench and the trench extension separates a first rigid piece of the silicon layer and a second rigid piece of the silicon layer,
a first electrode comprising the first rigid piece of the silicon layer having a first porous portion;
a second electrode comprising the second rigid piece of the silicon layer having a second porous portion;
an electrolyte in contact with the first porous portion and the second porous portion, and
a cover.

12. The electrochemical capacitor of claim 1 , wherein the first rigid piece and the second rigid piece are made of a semiconductor material having a resistivity less than 100 mΩ-cm.

13. The electrochemical capacitor of claim 1 , wherein the first rigid piece and the second rigid piece are made of a semiconductor material having a resistivity less than 1 mΩ-cm.

14. The semiconductor chip of claim 11 , wherein the first rigid piece, the second rigid piece and the rigid support structure enclose a cavity for the electrolyte, the cavity being completely filled with the electrolyte and contains no separator film.

15. The semiconductor chip of claim 11 , wherein the pores of the first porous portion and the second porous portion form longitudinal channels in the first rigid piece and the second rigid piece.

16. The semiconductor chip of claim 15 , wherein each channel has a smallest diameter, the smallest diameter being less than 2 nanometers for at least half of the channels.

17. The semiconductor chip of claim 15 , wherein the trench is limited by facing surfaces of the first rigid piece and the second rigid piece; and wherein the longitudinal channels are substantially perpendicular to said facing surfaces.

18. The electrochemical capacitor of claim 1 , wherein the first rigid piece and second rigid piece are attached to the insulator layer, said insulator layer being a buried oxide layer.

19. The electrochemical capacitor of claim 1 , wherein the first porous portion comprises a plurality of first pores within a silicon material of the silicon-on-insulator layer, each of the first pores having an interior surface,
the second porous portion comprises a plurality of second pores within a silicon material of the silicon-on-insulator layer, each of the second pores having an interior surface, and
the electrolyte is in contact with the interior surface of at least some of the first pores and at least some of the second pores.

Assignees

• Teknologian Tutkimuskeskus Vtt Oy
• Teknologian Tutkimuskeskus Vtt Oy

Inventors

• Ahopelto Jouni

Classifications

• H01G11/28 Primary

  arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives · CPC title

• H01G11/30

  characterised by their material · CPC title

• H01G11/26 Primary

  characterised by their structure, e.g. multi-layered, porosity or surface features · CPC title

• Y02E60/13

  Energy storage using capacitors · CPC title

• H01G11/54

  Electrolytes · CPC title