Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US9695499B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9695499-B2 |
| Application number | US-201414444740-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 28, 2014 |
| Priority date | Jun 29, 2011 |
| Publication date | Jul 4, 2017 |
| Grant date | Jul 4, 2017 |
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Provided is a nanowire manufacturing substrate, comprising a grid base layer on a substrate and a grid pattern formed by patterning the grid base layer, the grid pattern being disposed to produce a nanowire on a surface thereof. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.
Opening claim text (preview).
What is claimed is: 1. A kit, comprising: a nanowire manufacturing substrate that was formed by forming a grid base layer on a substrate and then patterning the grid base layer to form a plurality of grid patterns; a plurality of nanowires that are only on the grid patterns of the nanowire manufacturing substrate; and a nanowire adhesive film that comprises an adhesive agent whose adhesive force can be lost by ultraviolet rays, wherein the adhesive agent can be attached to the nanowires on the grid patterns and can separate the nanowires from the grid patterns, wherein the width of each nanowire is the same as the width of the respective grid pattern on which the nanowire is located, wherein the width of each grid pattern is in a range of from 20 nm to 200 nm, wherein each grid pattern has a lubricant agent thereon, wherein the lubricant agent is located between the grid pattern and the nanowires, wherein the grid base layer comprises a polymeric material, and wherein each nanowire comprises metal. 2. The kit of claim 1 , wherein the grid patterns were formed by compressing the grid base layer with an imprint mold. 3. The kit of claim 1 , wherein the nanowires were produced by forming a nanowire base layer on the grid patterns and then wet-etching the nanowire base layer to provide a gap between the grid patterns. 4. The kit of claim 1 , wherein the nanowires were formed by depositing a nanowire material onto the grid pattern to form a nanowire base layer and then wet-etching the nanowire base layer. 5. The kit of claim 1 , wherein the polymeric material is UV resin. 6. The kit of claim 1 , wherein the polymeric material comprises a photo-curable material or a heat-curable material. 7. The kit of claim 1 , wherein the adhesive agent comprises a photo-induced polymerization adhesive agent comprising an acryl group. 8. The kit of claim 1 , wherein the substrate comprises glass or plastic. 9. The kit of claim 1 , wherein the grid patterns are spaced from each other at a predetermined distance. 10. The kit of claim 3 , wherein the nanowire base layer was formed with a space provided between the grid patterns.
Electricity · mapped topic
on temporary substrates, e.g. substrates subsequently removed by etching · CPC title
Physical dimension · CPC title
Electricity · mapped topic
Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title
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